CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N04J3 BVDSS 40V ID 12A RDSON(MAX) 35mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB35N04J3 TO-252 G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 40 ±20 12 8 48 10 5 2 36 12 -55~+175 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% MTB35N04J3 CYStek Product Specification Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.1 80 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. Unit Test Conditions 40 1.8 12 - 2.3 19 30 40 3.2 ±100 1 25 35 50 V V S nA μA μA A mΩ mΩ VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =7V, ID=8A - 9.1 2.3 3 2.5 7.5 12 4 796 84 59 2.5 - nC ID=10A, VDS=20V, VGS=10V ns VDS=20V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=20V, f=1MHz Ω VGS=15mV,VDS=0, f=1MHz - 15 8 12 48 1.3 - A V ns nC IF=IS, VGS=0V IF=5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB35N04J3 MTB35N04J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping Marking 2500 pcs / Tape & Reel B35N04 CYStek Product Specification Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 2.4 50 VGS= 10V 40 RDS(ON) -Normalized Drain-Source On-Resistance 6.0V ID- Drain Current(A) 5.0 V 2.0 30 20 5.0V 4.0V 10 0 VGS = 3.5 V 2.2 8.0V 7.0V 3.5V 4 1 3 2 VDS- Drain Source Voltage(V) 0 1.8 6.0 V 1.6 7.0 V 1.4 8.0 V 1.2 10 V 1.0 0.8 5 0 10 50 0.09 ID = 10A VGS = 10V ID = 10 A 0.08 1.6 0.07 0.06 1.3 RDS(ON) - On-Resistance(Ω) RDS(on) - Normalized Drain-Source On-Resistance 40 On-Resistance Variation with Gate-to-Source Voltage On-Resistance Variation with Temperature 1.9 1.0 0.7 0.4 -50 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 0.05 TA = 125°C 0.04 TA = 25°C 0.03 0.02 0.01 150 2 100 VDS= 10V Is - Reverse Drain Current(A) TA = -55° C 20 25° C 15 125° C 5 0 1 MTB35N04J3 8 10 V GS= 0V 25 10 4 6 VGS- Gate-to-Source Voltage(V) Body Diode Forward Voltage Variation with Source Current and Temperature Transfer Characteristics 30 ID- Drain Current(A) 20 30 I D - Drain Current(A) 2 3 VGS- Gate-to-Source Voltage(V) 4 5 T A= 125° C 10 25° C 1 -55° C 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD- Body Diode Forward Voltage(V) 1.2 1.4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 4/7 Characteristic Curves(Cont.) Gate Charge Characteristics Capacitance Characteristics 1200 10 f = 1MHz VGS = 0 V ID = 10A VGS - Gate Source Voltage(V) 8 900 20V VDS = 15V Capacitance( pF ) 6 4 2 600 300 Coss 0 12 16 0 Maximum Safe Operating Area 50 50 RDS(ON) Limit 100μs 1ms 10ms 100ms 10 DC 1s 10s VGS= 10V Single Pulse RθJC= 6°C/ W TC = 25°C 1 1 10 30 40 Single Pulse Maximum Power Dissipation Single Pulse RθJC = 6°C/ W TC = 25°C 30 20 10 0 0.001 0 0 10 20 VDS - Drain-Source Voltage( V ) 40 P(pk),Peak Transient Power(W) 80 Crss 0 4 8 Q g - Gate Charge(nC) 0 I D - Drain Current(A) Ciss 40 50 0.01 VDS - Drain-Source Voltage(V) 0.1 1 10 t 1 ,Time (sec) 100 1000 Transient Thermal Response Curve 1 r(t),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 0.01 t2 1.Duty Cycle,D = t1 t2 Single Pulse 2.RθJC =6°C/ W 3.TJ - TC = P * RθJC (t) 4.RθJC(t)=r(t) * RθJC 0.001 10 -4 MTB35N04J3 10 -3 10 -2 -1 10 t 1 ,Time (sec) 1 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 7/7 TO-252 Dimension C A Marking: D B Device Name G F L Date code 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB35N04J3 CYStek Product Specification