CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTDA4N20J3 BVDSS 200V ID 15A RDSON(MAX) 140mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTDA4N20J3 TO-252 G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=11A, RG=25Ω Repetitive Avalanche Energy @ L=0.5mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 200 ±30 15 10.5 60 11 60.5 30.2 69 26 -55~+150 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% MTDA4N20J3 CYStek Product Specification Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.8 80 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 Min. Typ. Max. Unit Test Conditions 200 2.0 15 - 3.2 11 120 130 4.5 ±100 1 25 140 160 V V S nA μA μA A mΩ mΩ VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=7.5A VGS=±30, VDS=0 VDS =160V, VGS =0 VDS =130V, VGS =0, Tj=125°C VDS =5V, VGS =10V VGS =10V, ID=7.5A VGS =7V, ID=3.8A - 100 13 18 22 140 85 90 7472 139 143 - nC ID=7.5A, VDS=100V, VGS=10V ns VDS=100V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz - - 15 60 1.5 A V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTDA4N20J3 MTDA4N20J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping Marking 2500 pcs / Tape & Reel DA4N20 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 3/7 Typical Characteristics MTDA4N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) MTDA4N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTDA4N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDA4N20J3 CYStek Product Specification Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 7/7 CYStech Electronics Corp. TO-252 Dimension Marking: Device Name Date code 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.0827 0.0984 0.0374 0.0512 0.0118 0.0335 0.0157 0.0370 0.0236 0.0394 0.0157 0.0236 0.2087 0.2441 0.2638 0.2874 0.0866 0.1181 DIM A A1 B B1 B2 C D D2 D3 Millimeters Min. Max. 2.10 2.50 0.95 1.30 0.30 0.85 0.40 0.94 0.60 1.00 0.40 0.60 5.30 6.20 6.70 7.30 2.20 3.00 DIM E E2 H L L1 L2 L3 P Inches Min. Max. 0.2520 0.2638 0.1890 0.2146 0.3622 0.3996 0.0350 0.0669 0.0354 0.0650 0.0197 0.0433 0.0000 0.0118 0.0827 0.0984 Millimeters Min. Max. 6.40 6.70 4.80 5.45 9.20 10.15 0.89 1.70 0.90 1.65 0.50 1.10 0.00 0.30 2.10 2.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDA4N20J3 CYStek Product Specification