DAESAN DF08

CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
DF005 THRU DF10
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 50A Peak
· Designed for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
C
B A
E
H
DF
D
J
G
L
Mechanical Data
K
· Case : Molded Plastic
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 208
· Polarity : As Marked on Case
· Approx. Weight : 0.38 grams
· Mounting Position : Any
· Marking : Type Number
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
0.22
0.30
D
1.27
2.03
E
7.60
8.90
G
3.81
4.69
H
8.13
8.51
2.60
J
2.40
K
5.00
5.20
L
0.46
0.58
A ll Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
DF005 DF01
DF02
DF04
DF06
DF08
DF10
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRMM
VRWM
VR
50
100
200
400
600
800
1000
Volts
RMS Reverse Voltage
VRMS
35
70
140
280
420
560
700
Volts
@ TA=40℃
Io
1.0
Amp
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
50
Amps
Forward Voltage (per element)
VFM
1.1
Volts
Average Rectified Output Current
@ IF=1.0 A
@ TA=25℃
Peak Reverse Current at Rated
DC Blocking Voltage (per element) @ TA=125℃
IRM
I2t Rating for Fusing (t<8.3ms)
I 2t
10.4
A2S
Typical Junction Capacitance
per element (Note 1)
Cj
25
pF
Typical Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
40
℃/W
Operating and Storage Temperature Range
Tj
TSTG
10
500
-65 to +150
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas.
μA
℃
RATING AND CHARACTERISTIC CURVES DF005 THRU DF10
1.0
I F , INST ANT ANEOUS FOR WARD CURRENT
(A)
FOR WARD CURRENT
I (AV) , AVERAGE
0.5
0
40
60
100
80
120
10
(A)
60 Hz Resistive or
Inductive load
T j = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.1
0.01
140
0.4
60
1.0
1.4
1.2
100
T j = 25°c
f = 1.0 Mhz
V sig = 50 mV p-p
Single half-sine-W ave
(JEDEC Method)
C J , CAP ACIT ANCE (pF)
50
40
30
20
10
10
0
1
1
10
1
100
(µA)
CURRENT
10
100
V R , REVERSE VOL TAGE (V)
Fi g. 4 Typ Junction Capacitance (per element )
NUMBER OF CYCLES AT 60 Hz
Fi g. 3 Max Non-Repetitive PeakForward Sur ge Current
I R , INST ANT ANEOUS REVERSE
(A)
CURRENT
0.8
V F , INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fi g. 2 Typ Forward Characteristics (per element )
T A , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Output Current Deratin g Curve
I FSM , PEAK FOR WARD SURGE
0.6
100
T j = 125°C
10
1.0
T j = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fi g. 5 Typ Reverse Characteristics (per element)