DALLAS DS1482S/T

DS1482
1-Wire Level Shifter and Line Driver
with Load Sensor
www.maxim-ic.com
FEATURES
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PIN ASSIGNMENT
Works with All iButtons® and 1-Wire®
Devices
Communicates at Regular and Overdrive 1Wire Speed (Host-Dependent)
Separate Interface Power Supply to Level
Shift to Non-5V Systems
External Strong-Pullup Control Pin can be
Used to Provide Low-On-Resistance-High
Current Power Source
Load Sensor to Detect when Strong-Pullup
Power Delivery is no Longer Needed
Power Delivery DONE Signal can be
Connected to Host Interrupt
Low-Cost 16-Pin SO Surface-Mount Package
Operating Temperature Range: -40°C to
+85°C
VCCQ
N.C.
SPU
START
TXD
N.C.
GND
N.C.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
N.C.
PCTLZ
DONE
RXD
N.C.
I/O
N.C.
ORDERING INFORMATION
DS1482S
SO-16
DS1482S/T&R
SO-16, Tape-and-Reel
Contact the factory for versions with different
signal polarities.
DESCRIPTION
The DS1482 is a simple 1-Wire line driver with load sensor and level shifter, designed to function as an
interface between a 3V host system and a 1-Wire system that runs on 5V. Two supplies are provided, a
5V supply for the 1-Wire operations (VCC) and an interface supply (VCCQ). The DS1482 can connect
directly to a synchronous serial port if it supports the appropriate bit rates to generate 1-Wire timing.
Figure 1 shows the DS1482 block diagram. TXD is buffered and controls an N-channel transistor, which
drives the 1-Wire pin I/O low, e.g., to initiate a time slot. The logic level of the I/O pin is returned
through a level-shifting buffer to the RXD pin for the host processor to read. Figure 3 shows the
relationship of these signals in case of a 1-Wire read time slot.
The SPU input generates a control signal (PCTLZ) for an external low-impedance PMOS transistor
(Figure 2) that bypasses the 1-Wire pullup resistor (RPUP) to provide power for 1-Wire devices with a
high-load current. PCTLZ is gated by the inverted TXD signal. This prevents a high through-current in
case TXD and SPU are high at the same time.
The DS1482 contains a high-precision comparator because it is important for the host micro to know
when the high load on the 1-Wire side is no longer active. As shown in Figure 4, the high current load
causes a small drop of the voltage on the I/O pin. The comparator detects when the high current phase
ends, and enables DONE after the deglitching time tCF is over. The START signal allows the host micro
to selectively enable DONE.
iButton and 1-Wire are registered trademarks of Dallas Semiconductor.
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032103
DS1482
PIN
NAME
1
VCCQ
3
SPU
4
START
5
TXD
7
10
GND
I/O
12
RXD
13
DONE
14
PCTLZ
16
VCC
2, 6, 8, 9,
11, 15
N.C.
FUNCTION
Operating voltage for all circuitry that connects to the controlling
microprocessor (TXD, RXD, START, SPU, DONE pins).
This line is used to control the external strong pullup function. When SPU is
low, the strong pullup (PCTLZ) is high. When SPU is high and TXD is low,
PCTLZ is low.
This line acts as an enable control for the DONE pin. If START is high, then
DONE reflects the filtered digital output of the current-sense comparator. If
START is low, then DONE is low.
When TXD is low, the I/O pin is pulled resistively to VCC. When TXD is
high, the 1-Wire bus is pulled to GND (for write-0, write-1, read, and reset
low times).
Ground Reference for VCCQ, VCC, 1-Wire
1-Wire Data
This line returns the digital state of the 1-Wire bus, level-shifted to swing
between VCCQ and GND.
This line is high only when the buffered, filtered digital output from the
current-sense comparator indicates that the downstream 1-Wire slave device
is no longer sinking high current. This signal is enabled if START is high.
Active-low control pin for an external low-on-resistance, high-current
supply. This signal typically controls the gate of a P-channel MOSFET. This
signal is low when SPU is high and TXD is low.
Operating voltage for all circuitry that connects to the 1-Wire environment
(I/O and PCTLZ pins).
Not Connected
Figure 1. Block Diagram
LEVEL-SHIFT BOUNDARY
VCCQ
VCC
RPUP
I/O
RXD
TXD
GND
+
DONE
-
Vref
START
PCTLZ
SPU
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DS1482
Figure 2. Typical Operating Circuit
Selecting RS
Assuming that the series resistance of the FET in
on-condition can be neglected, the value of RS is
limited as follows:
RSmax = 0.0015 x VCCmin/I(standby,max)
RSmin = 0.01 x VCCmax/I(active,min)
VCC = 5V
RS
VCCQ = 3.3V
(21)
IRLMS6702
VCC
VCCQ
Example:
VCCmin = 4.5V, VCCmax = 5.5V
I(standby,max) = 0.15mA
I(active,min) = 12mA
PCTLZ
VCCQ
SH7622
DS1482
µC
(164) TxD0
TXD
RXD
SPU
START
DONE
RxD0
(32) PTA0
(31) PTA1
(178) IRQ7
(171)
I/O
RSmax = 45W, RSmin = 4.58W
1-Wire
NETWORK
To maximize available power on the 1-Wire line,
RS should be close to the lowest permissible
value, in this example 5.1W ±5%. The effect of the
on-chip pullup resistor is negligible.
GND
Figure 3. DS1482 Application Signals, Normal Communication
TXD
H
L
I/O
H
L
RXD
H
L
SPU, START, DONE ALL LOW
Figure 4. DS1482 Application Signals, Strong Pullup Case
TXD
H
L
I/O
H
L
RXD
H
L
SPU
H
L
PCTLZ
H
L
CURRENT
1
2
3
tCF
DONE
H
L
4
START
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H
L
DS1482
Point 1:
Point 2:
Point 3:
Point 4:
The 1-Wire slave device starts drawing current (internal micro or numeric processor is
running). The strong pullup (SPU) must be activated before the high current phase begins.
The 1-Wire slave device no longer draws current. After the deglitching time (tCF) is over, the
DONE signal turns high. The START signal must be activated no later than tSD before tCF is
over. Typically START is activated shortly after SPU, but not before the 1-Wire slave device
has started drawing high current.
As soon as the DONE signal is high, the host micro ends the strong pullup by changing SPU
to low.
While the DONE signal is high, the host micro changes START to low; this may occur
simultaneously with the state change of SPU or later. When START changes to low, DONE
becomes low.
Figure 5. Timing References TXD to I/O
0.7 x VCCQ
TXD
0.2 x VCCQ
tTI
tTI
0.9 x VCC
I/O
0.1 x VCC
tFIO
Figure 6. Timing References I/O to RXD
0.7 x VCC
I/O
0.2 x VCC
tIR
tIR
0.9 x VCCQ
RXD
0.1 x VCCQ
tF
tR
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DS1482
Figure 7. Timing References SPU to PCTLZ
0.7 x VCCQ
SPU
0.2 x VCCQ
tSP
tSP
0.9 x VCC
PCTLZ
0.1 x VCC
tF
tR
Figure 8. Timing References START to DONE
START
0.2 x VCCQ
tSD
0.9 x VCCQ
DONE
0.1 x VCCQ
tR
tF
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DS1482
ABSOLUTE MAXIMUM RATINGS*
Voltage to GND (All Pins)
-0.5V, +6.0V
Combined Source/Sink Current (All Pins)
20mA
Operating Temperature Range
-40°C to +85°C
Junction Temperature
+150°C
Storage Temperature Range
-55°C to +125°C
Lead Temperature (Soldering)
See IPC/JEDEC 020A
ESD requirements are 15kV for the I/O pin and 4kV for all other pins.
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS
(VCC = 4.5V to 5.5V, VCCQ = 3.0V to 3.6V; TA = -40°C to +85°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
Supply Current
ICC
Supply Current
ICCQ
Supply Ramp-up
VCC, VCCQ rising from 0
Time (System
tRCC
to VCCMIN and VCCQMIN,
0.1
Requirement)
respectively
1-Wire Pullup
RPUP
850
Resistor
INPUT PINS SPU, START, TXD
0.7 x VCCQ
Input High Voltage
VIH
Input Low Voltage
VIL
Measured with either 0V
Input Leakage
ILP
or VCCQ on the pin
(Note 1)
No DC load on I/O; see
Delay TXD to I/O
tTI
Figure 5 (Note 2)
I/O PIN (1-WIRE)
Output Low Voltage
VOL
100mA load
Output High Voltage
VOH
No DC load
Pin Leakage Current
ILP
(Note 3)
-1
0.7 x VCC
Input High Voltage
VIH
Input Low Voltage
VIL
Comparator
0.99 x VCC
VREF
Reference Voltage
Output Fall Time
tFIO
0.9 x VCC to 0.1 x VCC
45
(50pF Load)
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TYP
MAX
150
100
UNITS
µA
µA
µs
1650
W
0.2 x VCCQ
V
V
3
µA
100
ns
0.4
V
V
µA
V
V
VCC
+1
0.995 x
VCC
0.2 x VCC
0.998 x
VCC
150
V
ns
DS1482
PARAMETER
SYMBOL
OUTPUT PIN RXD
Output-Low Voltage
VOL
Output-High Voltage
VOH
Output Rise Time
tR
(50pF Load)
Output Fall Time
tF
(50pF Load)
Delay I/O to RXD
tIR
(50pF Load)
OUTPUT PIN PCTLZ
Output-Low Voltage
VOL
Output-High Voltage
VOH
Output Rise Time
tR
(50pF Load)
Output Fall Time
tF
(50pF Load)
Delay SPU to PCTLZ
tSP
(50pF Load)
OUTPUT PIN DONE
Output-Low Voltage
VOL
Output-High Voltage
VOH
Output Rise Time
tR
(50pF Load)
Output Fall Time
tF
(50pF Load)
Delay I/O to DONE
tCF
(50pF Load)
Delay START to
tSD
DONE (50pF Load)
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
CONDITIONS
MAX
UNITS
0.4
V
V
0.1 x VCCQ to 0.9 x VCCQ
50
ns
0.9 x VCCQ to 0.1 x VCCQ
50
ns
See Figure 6 (Note 2)
100
ns
0.4
V
V
0.1 x VCC to 0.9 x VCC
50
ns
0.9 x VCC to 0.1 x VCC
50
ns
See Figure 7 (Note 4)
100
ns
0.4
V
V
0.1 x VCCQ to 0.9 x VCCQ
50
ns
0.9 x VCCQ to 0.1 x VCCQ
50
ns
500
µs
100
ns
100µA load
-100µA load
MIN
TYP
VCCQ - 0.5V
100µA load
-100µA load
VCC - 0.5V
100µA load
-100µA load
VCCQ - 0.5V
START at VCCQ (Note 5)
See Figure 8
128
The input pins have a weak pulldown.
For OD read- or write-1 time slots, TXD should be pulsed high for 1.28µs. The window for
sampling RXD begins 1.8µs after TXD has turned high and ends 2.05µs after TXD has turned
high. RXD must be sampled inside this window. Correct sampling can be achieved with the
particular recommended microcontroller Hitachi SH7622 if the peripheral module operating
frequency PF is higher or equal to 22MHz.
Measured either with VCC on the pin and TXD low or with 0V on the pin and TXD high. This
parameter is guaranteed by design, and is not production tested.
The PCTLZ signal is gated by TXD. The PCTLZ output is only low if TXD is low.
Characteristic of the glitch-eating filter on the output of the load-sensing comparator, i.e., an
event where the downstream 1-Wire slave device is sinking high current, ceases sinking the
current for less than this amount of time, and resumes sinking the current does not generate
high level on DONE; DONE goes high this amount of time after the downstream 1-Wire slave
device has ceased sinking high current.
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