FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 6A, -100V, RDS(on) = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current • Neutron - Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 1.50nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2 Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Symbol This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. D G S This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 4-1 FRM9130D, R, H -100 -100 UNITS V V 6 4 18 ±20 A A A V 75 30 0.60 18 6 18 -55 to +150 W W W/oC A A A oC 300 oC File Number 3262.2 FRM9130D, FRM9130R, FRM9130H Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V Gate-body Leakage Forward IGSSF VGS = -20V - 100 nA Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA Zero-Gate Voltage Drain Current IDSS1 IDSS2 IDSS3 VDS = -100V, VGS = 0 VDS = -80V, VGS = 0 VDS = -80V, VGS = 0, TC = +125oC - 1 0.025 0.25 mA Time = 20µs - 18 A Rated Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 6A - -3.47 V Drain-source On Resistance RDS(on) VGS = -10V, ID = 4A - .550 Ω td(on) VDD = -50V, ID = 6A - 48 Pulse Width = 3µs - 220 Period = 300µs, Rg = 25Ω - 128 0 ≤ VGS ≤ 10 (See Test Circuit) - 74 Turn-On Delay Time Rise Time tr ns Turn-Off Delay Time td(off) Fall Time tf Gate-Charge Threshold QG(th) 1 4 Gate-Charge On State QG(on) 16 66 33 134 -3 -12 VDD = -50V, ID = 6A IGS1 = IGS2 0 ≤ VGS ≤ 20 nc Gate-Charge Total QGM Plateau Voltage VGP Gate-Charge Source QGS 3 12 Gate-Charge Drain QGD 7 28 Diode Forward Voltage VSD -0.6 -1.8 V Reverse Recovery Time TT - 300 ns - 1.67 - 60 V nc ID = 6A, VGD = 0 I = 6A; di/dt = 100A/µs Junction-To-Case Rθjc Junction-To-Ambient Rθja Free Air Operation oC/W ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD VDS L RL + CURRENT I TRANSFORMER AS VDS - 0V VARY tP TO OBTAIN REQUIRED PEAK IAS DUT VGS = -12V 0V RGS + 50Ω - tP DUT VDD 50V-150V 50Ω VGS ≤ 20V FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT 4-2 FRM9130D, FRM9130R, FRM9130H Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Source Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Drain-Source On-state Volts Drain-Source On Resistance SYMBOL TYPE TEST CONDITIONS MIN MAX UNITS (Note 4, 6) BVDSS FRM9130D, R VGS = 0, ID = 1mA -100 - V (Note 5, 6) BVDSS FRM9130H VGS = 0, ID = 1mA -95 - V (Note 4, 6) VGS(th) FRM9130D, R VGS = VDS, ID = 1mA -2.0 -4.0 V (Note 3, 5, 6) VGS(th) FRM9130H VGS = VDS, ID = 1mA -2.0 -6.0 V (Note 4, 6) IGSSF FRM9130D, R VGS = -20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF FRM9130H VGS = -20V, VDS = 0 - 200 nA (Note 2, 4, 6) IGSSR FRM9130D, R VGS = +20V, VDS = 0 - 100 nA (Note 2, 5, 6) IGSSR FRM9130H VGS = +20V, VDS = 0 - 200 nA (Note 4, 6) IDSS FRM9130D, R VGS = 0, VDS = -80V - 25 µA (Note 5, 6) IDSS FRM9130H VGS = 0, VDS = -80V - 100 µA (Note 1, 4, 6) VDS(on) FRM9130D, R VGS = -10V, ID = 6A - -3.47 V (Note 1, 5, 6) VDS(on) FRM9130H VGS = -16V, ID = 6A - -5.20 V (Note 1, 4, 6) RDS(on) FRM9130D, R VGS = -10V, ID = 4A - .550 Ω (Note 1, 5, 6) RDS(on) FRM9130H VGS = -14V, ID = 4A - .825 Ω NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 12/19/89 on TA17731 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988 4-3 FRM9130D, FRM9130R, FRM9130H Typical Performance Characteristics 4-4 FRM9130D, FRM9130R, FRM9130H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet - Attributes Data Sheet I. Group D - Attributes Data Sheet D. Group A G. Group D 2. Rad Hard TXV Equivalent - Optional Data Package 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 4-5 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FRM9130D, FRM9130R, FRM9130H TO-204AA JEDEC TO-204AA HERMETIC STEEL PACKAGE SEATING PLANE INCHES R1 ØP SYMBOL TERM. 3 s Øb R ØD q 2 1 Ø b1 e e1 L MIN MAX NOTES A 0.310 0.330 7.88 8.38 - 0.060 0.065 1.53 1.65 - Øb 0.038 0.042 0.97 1.06 2, 3 Øb1 0.138 0.145 3.51 3.68 - ØD - 0.800 - 20.32 e1 A MILLIMETERS MAX A1 e A1 MIN 0.215 TYP 5.46 TYP 0.430 BSC 4 10.92 BSC 4 L 0.430 - 10.93 - - ØP 0.155 0.160 3.94 4.06 - q 1.187 BSC 30.15 BSC - R 0.495 0.525 12.58 13.33 - R1 0.131 0.185 3.33 4.69 - s 0.655 0.675 16.64 17.14 - NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-204AA outline dated 11-82. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of seating plane. 5. Controlling dimension: Inch. 6. Revision 2 dated 6-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 4-6 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029