JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS(ON) = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure. - 4nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Also available at other radiation and screening levels. See us on the web, Intersil’s home page: http://www.semi.harris.com. Contact your local Intersil Sales Office for additional information. Ordering Information PART NUMBER JANSR2N7278 PACKAGE TO-205AF BRAND JANSR2N7278 Symbol Die family TA17633. D MIL-PRF-19500/604. G S Packaging TO-205AF D G S CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 2-13 File Number 4295.1 JANSR2N7278 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JANSR2N7278 250 250 UNITS V V 4 2 12 ±20 A A A V 25 10 0.20 12 4 12 -55 to 150 300 W W W/oC A A A oC oC 1.0 g CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS IGSS VDS = 200V, VGS = 0V VGS = ±20V TYP MAX UNITS 250 - - V TC = -55oC - - 5.0 V TC = 25oC 2.0 - 4.0 V TC = 125oC 1.0 - - V TC = 25oC - - 25 µA TC = 125oC - - 250 µA TC = 25oC - - 100 nA TC = 125oC - - 200 nA - - 2.94 V TC = 25oC - - 0.700 Ω TC = 125oC - - 1.68 Ω - - 35 ns - - 85 ns td(OFF) - - 195 ns tf - - 75 ns - - 120 nC - - 62 nC - - 4 nC nC VDS(ON) rDS(ON) td(ON) tr VGS = 10V, ID = 4A ID = 2A, VGS = 10V VDD = 125V, ID = 4A, RL = 31.3Ω, VGS = 10V, RGS = 25Ω Qg(TOT) VGS = 0V to 20V Gate Charge at 10V Qg(10) VGS = 0V to 10V Threshold Gate Charge (Not on Slash Sheet) Qg(TH) VGS = 0V to 2V Total Gate Charge (Not on Slash Sheet) MIN VDD = 125V, ID = 4A Gate Charge Source Qgs - - 12 Gate Charge Drain Qgd - - 30 nC Thermal Resistance Junction to Case RθJC - - 5.0 oC/W Thermal Resistance Junction to Ambient RθJA - - 175 oC/W 2-14 JANSR2N7278 Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage TEST CONDITIONS VSD Reverse Recovery Time ISD = 4A trr MIN TYP MAX UNITS 0.6 - 1.8 V - - 800 ns ISD = 4A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 250 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 200V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 10V, ID = 4A - 2.94 V Drain to Source On Resistance (Notes 1, 3) rDS(ON) VGS = 10V, ID = 2A - 0.700 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Typical Performance Curves Unless Otherwise Specified 5 40 TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN (A) 4 3 2 1 0 -50 0 50 100 150 10 100µs 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 TC , CASE TEMPERATURE (oC) NORMALIZED THERMAL IMPEDANCE (ZθJC) FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 10ms 100ms 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 700 FIGURE 2. FORWARD BIAS SAFE OPERATING AREA 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM SINGLE PULSE 0.01 NOTES: DUTY FACTOR: D = t1/t2 t1 t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 2-15 100 101 JANSR2N7278 Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 50Ω VDD 50V-150V DUT tP VDD + VGS ≤ 20V 0V VDS IAS 50Ω tAV FIGURE 4. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 5. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS VGS = 10V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 6. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 7. RESISTIVE SWITCHING WAVEFORMS Qg 10V Qgs Qgd VG CHARGE FIGURE 8. BASIC GATE CHARGE WAVEFORM 2-16 JANSR2N7278 Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANS) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 4) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 4) µA ±20% (Note 5) Ω ±20% (Note 5) V NOTES: 4. Or 100% of Initial Reading (whichever is greater). 5. Of Initial Reading. Screening Information TEST JANS Gate Stress VGS = 30V, t = 250µs Pind Required Pre Burn-In Tests (Note 6) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 6) All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 5% Final Electrical Tests (Note 6) MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 6. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA TEST CONDITIONS VDS = 200V, t = 10ms MAX UNITS 0.50 A IAS VGS(PEAK) = 15V, L = 0.1mH 12 A Thermal Response ∆VSD tH = 10ms; VH = 25V; IH = 2A 92 mV Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 1A 190 mV 2-17 JANSR2N7278 Rad Hard Data Packages - Intersil Power Transistors 1. JANS Rad Hard - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. JANS Rad Hard - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data 2-18 JANSR2N7278 TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A h SEATING PLANE L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.350 0.370 8.89 9.39 - ØD1 0.315 0.335 8.01 8.50 - e 0.095 0.105 2.42 2.66 4 e1 0.190 0.210 4.83 5.33 4 e2 0.095 0.105 2.42 2.66 4 h 0.010 0.020 0.26 0.50 - j 0.028 0.034 0.72 0.86 - k 0.029 0.045 0.74 1.14 - L 0.500 0.560 12.70 14.22 3 P 0.075 - 1.91 - 5 NOTES: 1. These dimensions are within allowable dimensions of Rev. E of JEDEC TO-205AF outline dated 11-82. 2. Lead dimension (without solder). 3. Solder coating may vary along lead length, add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.100 inches (2.54mm) from bottom of seating plane. 5. This zone controlled for automatic handling. The variation in actual diameter within this zone shall not exceed 0.010 inches (0.254mm). 6. Lead no. 3 butt welded to stem base. 7. Controlling dimension: Inch. 8. Revision 3 dated 6-94. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 2-19 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029