DAYA 2SA684

TO-92L Plastic-Encapsulate Transistors
2SA684
TRANSISTOR (PNP)
TO-92L
FEATURES
1. EMITTER
∙ Automatic insertion by radial taping possible.
2. COLLECTOR
· Complementary pair with 2SC1384.
3. BASE
123
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-1
A
PC
Collector Power Dissipation
0.75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Test
unless
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10uA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-5
V
ICBO
VCB=-20V, IE=0
hFE(1)
VCE=-10V, IC=-500mA
85
hFE(2)
VCE=-5V, IC=-1A
50
Collector cut-off current
DC current gain
-0.1
μA
340
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
-0.85
-1.2
V
fT
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
Range
Cob
VCE=-10V, IE=50mA, f=200MHz
200
VCB=-10V, IE=0, f=1MHz
20
MHz
30
hFE(1)
Q
R
S
85-170
120-240
170-340
pF
Typical Characteristics
2SA684