2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.200 3 10.60 0 11.00 0 2 1 Features 3.900 4.100 3.000 3. BASE 0.000 0.300 2.100 2.300 Low frequency power amplifier complementary pair with 2SB649/A 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Value Units 180 V 2SD669 120 2SD669A 160 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC 5 V 1.5 A Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ 0.660 0.860 V 2.290 TYP 4.480 4.680 Dimensions in inches and (millimeters) unless otherwise Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Parameter 0.450 0.600 specified) MIN TYP MAX 180 IC=10mA, IB=0 2DS669 120 2SD669A 160 IE=1mA, IC=0 UNIT V V 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage 2SD669 60 320 2SD669A 60 200 VCE=5V, IC=500mA 30 IC=500mA, IB=50mA 1 V 1.5 V Base-emitter voltage VBE VCE=5V, IC=150mA Transition frequency fT VCE=5V, IC=150mA 140 MHz VCB=10V, IE=0, f=1MHz 14 pF Cob Collector output capacitance CLASSIFICATION OF Rank Range hFE(1) B C D 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 2SD669/2SD669A(NPN) TO-126 Transistor Typical Characteristics