2SD669/2SD669A

2SD669/2SD669A
TO-126C Transistor (NPN)
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
4.040
4.240
Features
—
3.000
1.800 3.400
2.200
7.800
8.200
10.800
11.200
3.100
3.300
2.700
2.900
Low frequency power amplifier complementary pair
with 2SB649/A
1.170
1.370
15.300
15.700
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector- Base Voltage
VCEO
Collector-Emitter Voltage
Value
Units
180
V
2SD669
120
2SD669A
160
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
0.660
0.860
2.280 TYP.
V
5
V
1.5
A
Collector Dissipation
1
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
0.450
0.600
4.460
4.660
Dimensions in inches and (millimeters)
unless
otherwise
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC=1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Parameter
1.300
1.500
specified)
MIN
TYP
MAX
180
IC=10mA, IB=0
2DS669
120
2SD669A
160
IE=1mA, IC=0
UNIT
V
V
5
V
Collector cut-off current
ICBO
VCB=160V, IE=0
10
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
10
µA
hFE(1)
VCE=5V, IC=150mA
DC current gain
hFE(2)
VCE(sat)
Collector-emitter saturation voltage
2SD669
60
320
2SD669A
60
200
VCE=5V, IC=500mA
30
IC=500mA, IB=50mA
1
V
1.5
V
Base-emitter voltage
VBE
VCE=5V, IC=150mA
Transition frequency
fT
VCE=5V, IC=150mA
140
MHz
VCB=10V, IE=0, f=1MHz
14
pF
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
hFE(1)
B
C
D
2SD669
60-120
100-200
160-320
2SD669A
60-120
100-200
2SD669/2SD669A
TO-126C Transistor (NPN)
Typical Characteristics