JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) TO-92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 µA Collector cut-off current ICEO VCE= 30V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA DC current gain hFE VCE=2V, IC= 1A Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V fT Transition frequency VCE= 5V , f =10MHz Ic=0.1A 60 400 50 MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 A,May,2011