DAYA S9014

TO-92 Plastic-Encapsulate Transistors
S9014
TO-92
TRANSISTOR (NPN)
1. EMITTER
FEATURES
High total power dissipation.(PC=0.45W)
z
z
High hFE and good linearity
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Complementary to S9015
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.45
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=35V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
60
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE=5V, IC= 10mA
150
f=30MHz
MHz
hFE(1)
A
B
C
D
60-150
100-300
200-600
400-1000
Typical Characteristics
S9014