TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High total power dissipation.(PC=0.45W) z z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V fT Transition frequency CLASSIFICATION OF Rank Range VCE=5V, IC= 10mA 150 f=30MHz MHz hFE(1) A B C D 60-150 100-300 200-600 400-1000 Typical Characteristics S9014