TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V 5 V VEBO 1 2 3 IC Emitter-Base Voltage Collector Current -Continuous 500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=50mA 64 hFE(2) VCE=1V, IC= 500mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 Typical Characteristics S9013