TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE(1) VCE= -1V, IC= -50mA 85 hFE(2) VCE= -1V, IC= -500mA 50 VCE(sat) IC=-500mA, IB=-50mA -0.6 V VBE(sat) IC=-500mA, IB=-50mA -1.2 V 400 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE=- 6V, IC=-20mA fT Transition frequency 150 f =30MHz MHz CLASSIFICATION OF hFE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 Typical Characteristics 8550S