DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009(LN26586) FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability 10µs Short Circuit Withstand Lead Free construction 10.2kV isolation KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A 600A *(measured at the auxiliary terminals) APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. Fig. 1 Circuit configuration The DIM300XCM45-F000 is a 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Outline type code: X ORDERING INFORMATION Order As: (See Fig. 11 for further information) Fig. 2 Package DIM300XCM45-F000 Note: When ordering, please use the complete part number 1/8 DIM300XCM45-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V, Tj = -25 ° C Max. Units 4500 V ±20 V Continuous collector current Tcase = 100 ° C 300 A IC(PK) Peak collector current 1ms, Tcase= 115 ° C 600 A Pmax Max. transistor power dissipation Tcase = 25 ° C, Tj = 150 ° C 5.2 kW Diode I t value VR = 0V, tp = 10ms, Tj = 125 ° C 51 kA s Visol Isolation voltage Commoned terminals to base plate. AC RMS,1 min, 50Hz 10.2 kV QPD Partial discharge IEC1287. V1 = 6900V, V2 = 5100V, 50Hz RMS 10 pC 2 2 It 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Critical Tracking Index): >600 Symbol Parameter Test Conditions Rth(j-c) Thermal resistance - transistor Continuous dissipation - junction to case 24 ° C/kW Continuous dissipation - junction to case 48 ° C/kW Mounting torque 5Nm (with mounting grease) 8 ° C/kW Transistor 150 °C Diode 125 °C 125 °C Mounting M6 5 Nm Electrical connections – M4 2 Nm Electrical connections – M8 10 Nm Rth(j-c) Rth(c-h) Tj Tstg Thermal resistance – diode (per switch) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque 2/8: Min Typ. Max Units -40 This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol ICES Collector cut-off current IGES VGE(TH) VCE(sat) Parameter † Test Conditions 2 mA VGE = 0V, V = V ,Tcase =125 ° C 60 mA Gate leakage current VGE = ±15V, VCE = 0V 4 A Gate threshold voltage IC = 40mA, VGE = VCE 7.0 V Collector-emitter saturation voltage 6.5 2.9 V VGE =15V, IC = 300A,TJ = 125 ° C 3.5 V DC 300 A 600 A IF = 300A 3.0 V IF = 300A, TJ = 125 ° C 3.1 V IFM Diode maximum forward current tp = 1ms Diode forward voltage 5.5 VGE = 15V, IC = 300A Diode forward current † Units VGE = 0V,VCE = VCES IF VF Min Typ. Max Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 65 nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 0.9 nF LM Module inductance – per arm 30 nH Internal resistance 270 µ I1 1400 A I2 1250 A RINT SCData Short circuit current, ISC Tj = 125° C, VCC VGE tp * VCE(max) = VCES – L x di/dt IEC 6074-9 Note: † * Measured at the auxiliary terminals L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/8 DIM300XCM45-F000 ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units IC = 300A 5.0 s Fall time VGE = ±15V 250 ns EOFF Turn-off energy loss VCE = 2250V 750 mJ td(on) Turn-on delay time RG(ON) = 10 850 ns Rise time RG(OFF)= 22 220 ns td(off) Turn-off delay time tf tr EON Turn-on energy loss Cge = 55nF 900 mJ Qg Gate charge L ~ 200nH 10 C Qrr Diode reverse recovery charge IF =300A 240 C Irr Diode reverse recovery current VCE =2250V 350 A Erec Diode reverse recovery energy dIF/dt =1500A/us 300 mJ Tcase = 125° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units IC = 300A 5.2 s Fall time VGE = ±15V 250 ns EOFF Turn-off energy loss VCE = 2250V 850 mJ td(on) Turn-on delay time RG(ON) = 10, RG(OFF) = 22 800 ns Rise time Cge = 55nF 220 ns EON Turn-on energy loss L ~ 200nH 1350 mJ Qrr Diode reverse recovery charge IF =300A 430 C Irr Diode reverse recovery current VCE =2250V 410 A Erec Diode reverse recovery energy dIF/dt =1500A/us 530 mJ td(off) tf tr 4/8: Turn-off delay time This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5/8 DIM300XCM45-F000 6/8: Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1100g Module outline type code: X Fig.11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7/8 DIM300XCM45-F000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS & OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN THE UK Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual d work on the product has been started Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com