DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200FSM12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised applications requiring high thermal cycling capability. 1200V 2.2V 1200A 2400A External connection C1 C2 E1 E2 Aux C G Aux E External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Aux C ORDERING INFORMATION Order As: DIM1200FSM12-A000 E1 C1 E2 C2 Aux E G Note: When ordering, please use the whole part number. Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM1200FSM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 85˚C 1200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 2400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 10400 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 400 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - transistor Continuous dissipation - Min. Typ. Max. Units - - 12 ˚C/kW - - 26.7 ˚C/kW - - 8 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM1200FSM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1.5 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 38 mA Gate leakage current VGE = ±20V, VCE = 0V - - 6 µA VGE(TH) Gate threshold voltage IC = 60mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 2.2 2.8 V VGE = 15V, IC = 1200A, , Tcase = 125˚C - 2.6 3.3 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 1200 A IFM Diode maximum forward current tp = 1ms - - 2400 A VF† Diode forward voltage IF = 1200A - 1.9 2.2 V IF = 1200A, Tcase = 125˚C - 1.8 2.1 V VCE = 25V, VGE = 0V, f = 1MHz - 135 - nF Cies Input capacitance LM Module inductance - - 15 - nH Internal transistor resistance - - 0.27 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 8250 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 6750 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 1200A - 1250 - ns Fall time VGE = ±15V - 180 - ns EOFF Turn-off energy loss VCE = 600V - 160 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 250 - ns L ~ 100nH - 200 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 80 - mJ Qg Gate charge - 12 - µC Qrr Diode reverse recovery charge IF = 1200A, VR = 600V, - 120 - µC Irr Diode reverse current dIF/dt = 6200A/µs - 570 - A - 60 - mJ Min. Typ. Max. Units IC = 1200A - 1380 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 600V - 260 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 350 - ns L ~ 100nH - 220 - ns - 140 - mJ IF = 1200A, VR = 600V, - 240 - µC dIF/dt = 5700A/µs - 680 - A - 110 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM1200FSM12-A000 TYPICAL CHARACTERISTICS 2400 2400 Common emitter 2200 Tcase = 25˚C Common emitter 2200 Tcase = 125˚C 2000 Vce is measured at power busbars and not the auxiliary terminals 2000 1600 1600 Collector current, IC - (A) 1800 Collector current, IC - (A) 1800 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 0 0 4.0 350 Tc = 125˚C, Vcc = 600V, Rg = 2.2 Ohms 300 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 250 200 150 100 50 Eon Eoff Erec 400 600 800 1000 Collector current, IC - (A) 1200 1400 Fig. 5 Typical switching energy vs collector current 6/10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 300 200 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 Fig. 3 Typical output characteristics 0 0 Vce is measured at power busbars and not the auxiliary terminals Tc = 125˚C, Vcc = 600V, IC = 1200A 250 200 150 100 50 0 2 Eon Eoff Erec 3 5 4 Gate resistance, Rg - (Ohms) 6 7 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM12-A000 2400 2500 Tj = 25˚C Tj = 125˚C Tcase = 125˚C Vge = 15V Rg = 2.2 Ohm VF is measured at power busbars and not the auxiliary terminals 2000 Collector current, IC - (A) 2000 Forward current, IF - (A) 1600 1500 1200 1000 800 500 400 0 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF - (V) 3.0 0 0 3.5 Module IC Chip IC Fig. 7 Diode typical forward characteristics Transient thermal impedance, Zth (j-c) - (°C/kW ) 900 750 600 450 300 150 Diode Transistor 10 1 IGBT Diode 0 200 1400 100 Tcase =125˚C 0 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) Fig. 8 Reverse bias safe operating area 1050 Reverse recovery current, Irr - (A) 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 1400 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.37 0.12 0.82 0.11 0.1 Pulse width, tp - (s) 3 3.76 47.15 8.64 48.75 1 4 5.21 257.21 11.02 256.75 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 2.67 3.89 6.17 4.24 7/10 DIM1200FSM12-A000 2500 DC collector current, IC - (A) 2000 1500 1000 500 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 140 Fig. 11 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM12-A000 PACKAGE DETAILS For further package information please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 15 15 5 E1 C1 E2 C2 65 6 57 18 Aux E 18.5 16 2.5 Aux C 14.5 11 43.3 57 65 G 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3 Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Nominal weight: 1050g Module outline type code: F Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com