ETC DIM1200FSM12-A

DIM1200FSM12-A000
DIM1200FSM12-A000
Single Switch IGBT Module
Replaces July 2002, version DS5547-2.1
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5547-3.0 March 2003
KEY PARAMETERS
VCES
(typ)
VCE(sat)*
(max)
IC
(max)
IC(PK)
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM1200FSM12-A000 is a single switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised applications requiring high thermal
cycling capability.
1200V
2.2V
1200A
2400A
External connection
C1
C2
E1
E2
Aux C
G
Aux E
External connection
Fig. 1 Single switch circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Aux C
ORDERING INFORMATION
Order As:
DIM1200FSM12-A000
E1
C1
E2
C2
Aux E
G
Note: When ordering, please use the whole part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM1200FSM12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 85˚C
1200
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
2400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
10400
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
400
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
QPD
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
10
PC
IC
I2t
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200FSM12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - transistor
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
12
˚C/kW
-
-
26.7
˚C/kW
-
-
8
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM1200FSM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1.5
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
38
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
6
µA
VGE(TH)
Gate threshold voltage
IC = 60mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 1200A
-
2.2
2.8
V
VGE = 15V, IC = 1200A, , Tcase = 125˚C
-
2.6
3.3
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
1200
A
IFM
Diode maximum forward current
tp = 1ms
-
-
2400
A
VF†
Diode forward voltage
IF = 1200A
-
1.9
2.2
V
IF = 1200A, Tcase = 125˚C
-
1.8
2.1
V
VCE = 25V, VGE = 0V, f = 1MHz
-
135
-
nF
Cies
Input capacitance
LM
Module inductance
-
-
15
-
nH
Internal transistor resistance
-
-
0.27
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 900V,
I1
-
8250
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
6750
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200FSM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 1200A
-
1250
-
ns
Fall time
VGE = ±15V
-
180
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
160
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
250
-
ns
L ~ 100nH
-
200
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
80
-
mJ
Qg
Gate charge
-
12
-
µC
Qrr
Diode reverse recovery charge
IF = 1200A, VR = 600V,
-
120
-
µC
Irr
Diode reverse current
dIF/dt = 6200A/µs
-
570
-
A
-
60
-
mJ
Min.
Typ.
Max.
Units
IC = 1200A
-
1380
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
260
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
350
-
ns
L ~ 100nH
-
220
-
ns
-
140
-
mJ
IF = 1200A, VR = 600V,
-
240
-
µC
dIF/dt = 5700A/µs
-
680
-
A
-
110
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM1200FSM12-A000
TYPICAL CHARACTERISTICS
2400
2400
Common emitter
2200 Tcase = 25˚C
Common emitter
2200 Tcase = 125˚C
2000
Vce is measured at power busbars
and not the auxiliary terminals
2000
1600
1600
Collector current, IC - (A)
1800
Collector current, IC - (A)
1800
1400
1400
1200
1200
1000
1000
800
800
600
600
400
400
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, Vce - (V)
3.5
0
0
4.0
350
Tc = 125˚C,
Vcc = 600V,
Rg = 2.2 Ohms
300
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
250
200
150
100
50
Eon
Eoff
Erec
400
600
800
1000
Collector current, IC - (A)
1200
1400
Fig. 5 Typical switching energy vs collector current
6/10
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
4.5
5.0
Fig. 4 Typical output characteristics
300
200
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
200
Fig. 3 Typical output characteristics
0
0
Vce is measured at power busbars
and not the auxiliary terminals
Tc = 125˚C,
Vcc = 600V,
IC = 1200A
250
200
150
100
50
0
2
Eon
Eoff
Erec
3
5
4
Gate resistance, Rg - (Ohms)
6
7
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200FSM12-A000
2400
2500
Tj = 25˚C
Tj = 125˚C
Tcase = 125˚C
Vge = 15V
Rg = 2.2 Ohm
VF is measured at power busbars
and not the auxiliary terminals
2000
Collector current, IC - (A)
2000
Forward current, IF - (A)
1600
1500
1200
1000
800
500
400
0
0
0.5
1.0
1.5
2.0
2.5
Forward voltage, VF - (V)
3.0
0
0
3.5
Module IC
Chip IC
Fig. 7 Diode typical forward characteristics
Transient thermal impedance, Zth (j-c) - (°C/kW )
900
750
600
450
300
150
Diode
Transistor
10
1
IGBT
Diode
0
200
1400
100
Tcase =125˚C
0
400
600
800
1000
1200
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
1050
Reverse recovery current, Irr - (A)
200
400
600
800
1000
1200
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
1400
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
0.37
0.12
0.82
0.11
0.1
Pulse width, tp - (s)
3
3.76
47.15
8.64
48.75
1
4
5.21
257.21
11.02
256.75
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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2
2.67
3.89
6.17
4.24
7/10
DIM1200FSM12-A000
2500
DC collector current, IC - (A)
2000
1500
1000
500
0
0
20
40
60
80
100
Case temperature, Tcase - (˚C)
120
140
Fig. 11 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200FSM12-A000
PACKAGE DETAILS
For further package information please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
62
62
15
15
5
E1
C1
E2
C2
65
6
57
18
Aux E
18.5
16
2.5
Aux C
14.5 11
43.3
57
65
G
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1050g
Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
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SALES OFFICES
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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