DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. DS5464-7.1 January 2003 KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 200A 400A *(measured at the power busbars and not the auxiliary terminals) 1(E1/C2) 2(C1) 3(E2) 5(E1) 7(E2) 4(G1) 6(G2) 8(C1) Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200PHM33-A000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM200PHM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 85˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 2608 W Diode I2t value (Diode arm) VR = 0, tp = 10ms, Tvj = 125˚C 20 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 33mm 20mm 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 48 ˚C/kW - - 96 ˚C/kW - - 16 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M5 - - 4 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM200PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 15 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC =20mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 200A - 3.4 - V VGE = 15V, IC = 200A, , Tcase = 125˚C - 4.4 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 200 - A IFM Diode maximum forward current tp = 1ms - 400 - A VF† Diode forward voltage IF = 200A - 2.5 - V IF = 200A, Tcase = 125˚C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 0.65 - nF LM Module inductance - per switch - - 30 - nH Internal transistor resistance - per switch - - 0.54 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 1300 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 1100 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 1350 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 1800V - 150 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =10Ω - 550 - ns Rise time Cge = 33nF - 250 - ns EON Turn-on energy loss L ~ 100nH - 300 - mJ Qg Gate charge - 2.5 - µC Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 80 - µC Irr Diode reverse current dIF/dt = 1000A/µs - 140 - A - 110 - mJ Min. Typ. Max. Units IC = 200A - 1400 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 210 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =10Ω - 550 - ns Rise time Cge = 33nF - 250 - ns EON Turn-on energy loss L ~ 100nH - 440 - mJ Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 150 - µC Irr Diode reverse current dIF/dt = 850A/µs - 150 - A - 200 - mJ Parameter Symbol td(off) tf tr EREC Turn-off delay time Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr EREC Turn-off delay time Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM200PHM33-A000 TYPICAL CHARACTERISTICS 400 V Common emitter Tcase = 125˚C Vce is measured at power busbars is measured at power busbars ce 350 and not the auxiliary terminals 350 and not the auxiliary terminals 300 300 Collector current, IC - (A) Collector current, IC - (A) 400 Common emitter Tcase = 25˚C 250 200 150 100 200 150 100 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 50 0 0 250 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 50 0 1 2 3 4 5 0 6 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics 3 5 2 4 6 Collector-emitter voltage, Vce - (V) 7 8 Fig. 4 Typical output characteristics 700 500 Conditions: Tc = 125°C IC = 200A 600 Vcc = 1800V Cge = 33nF Switching energy, Esw - (mJ) Conditions: Tc = 125°C, 450 Rg = 10 Ohms, Vcc = 1800V, 400 Cge = 33nF 350 Switching energy, Esw - (mJ) 1 300 250 200 150 500 400 300 200 100 100 Eon (mJ) Eoff (mJ) Erec (mJ) 50 0 0 50 100 150 200 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/10 Eon (mJ) Eoff (mJ) Erec (mJ) 0 5 10 15 20 Gate resistance, Rg - (ohms) 25 30 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 400 Tj = 25˚C Tj = 125˚C 350 500 VF is measured at power busbars and not the auxiliary terminals 400 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 100 Chip 300 Module 200 100 Tcase = 125˚C Vge = ±15V Rg(min) = 10 50 0 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 500 4.0 1000 1500 2000 2500 3000 3500 Collector emitter voltage, Vce - (V) Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 100 400 Transistor Transient thermal impedance, Zth (j-c) - (°C/kW ) 350 Reverse recovery current, Irr - (A) Diode Tj = 125˚C 300 250 200 150 100 50 0 0 10 1 IGBT Diode 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 1.79 0.13 3.58 0.13 0.1 Pulse width, tp - (s) 3 15.77 48.03 31.53 48.03 1 4 19.11 248.53 38.23 248.53 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 11.26 5.80 22.52 5.80 7/10 DIM200PHM33-A000 400 350 DC collector current, IC - (A) 300 250 200 150 100 50 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 140 Fig. 11 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 750g Module outline type code: P Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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