DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) (LN24042) 1200V 2.2V 800A 1600A * (measured at the power busbars and not the auxiliary terminals) APPLICATIONS • Chopper • DC Motor Drives • Power Supplies The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DCS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM800DCS12-A000 Note: When ordering, please use the whole part number. Outline type code: D (See package details for further information) . Fig. 2 Electrical connections (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 /9 DIM800DCS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS – PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 1200 V ±20 V Continuous collector current Tcase = 85° C 800 A IC(PK) Peak collector current 1ms, Tcase =115° C 1600 A Pmax Max. transistor power dissipation Tcase = 25° C, Tj = 150° C 6940 W Diode I t value (IGBT arm) 2 Diode I t value (Diode arm) VR = 0, tP = 10ms, Tvj = 125° C 100 225 kA S Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V 2 It Visol 2 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 2 /9 DIM800DCS12-A000 SEMICONDUCTOR THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Parameter Symbol Rth(j-c) Al2O3 Copper 20mm 10mm 175 Thermal resistance – transistor Test Conditions Continuous dissipation – Min. Typ. Max. Units - - 18 ° C/kW - - 40 ° C/kW 27 ° C/kW junction to case Thermal resistance – diode (IGBT Rth(j-c) arm) Thermal resistance- diode ( Diode arm) Rth(c-h) Tj Tstg - Continuous dissipation – junction to case Thermal resistance – case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Storage temperature range Screw torque - - 8 ° C/kW Transistor - - 150 °C Diode - - 125 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /9 DIM800DCS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = OV, VCE = VCES - - 1 mA VGE = OV, VCE = VCES, Tcase = 125° C - - 25 mA Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.2 2.8 V VGE = 15V, IC = 800A, Tcase = 125° C - 2.6 3.2 V Ices Ices Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A IF = 800A - IF = 800A, Tcase = 125° C - 2.1 1.8 2.1 1.7 2.4 2.1 2.4 2.0 VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF VF Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) V V Cies Input capacitance LM Module inductance – per arm - - 20 - nH RINT Internal resistance – per arm - - 0.27 - mΩ SCData Short circuit. Isc Tj = 125° C, Vcc = 900V, I1 - 5500 - A tp ≤ 10µs, VCE(max) = VCES - L* ×di/dt I2 - 4500 - A IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4 /9 DIM800DCS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol Test Conditions Min. Typ. Max. Units IC = 800A - 1250 - ns Fall time VGE = ±15V - 170 - ns EOFF Turn-off energy loss VCE = 600V - 130 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 250 - ns L ∼ 100nH - 250 - ns td(off) tf tr Parameter Turn-off delay time Rise time EO Turn-on energy loss - 80 - mJ Qg Gate charge - 9 - µC Qrr Diode reverse recovery charge IF = 800A, VR = 600V, - 12 - µC Irr Diode reverse current dlF/dt = 4200A/µs - 570 - A Diode arm - 60 - mJ Test Conditions Min. Typ. Max. Units IC = 800A - 1500 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 600V - 160 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 400 - ns L ∼ 100nH - 220 - ns - 120 - mJ IF = 800A, VR = 600V, - 240 - µC dlF/dt = 4000A/µs - 680 - A Diode arm - 110 - mJ EREC Diode reverse recovery energy Tcase = 125° C unless stated otherwise. Symbol td(off) tf tr Parameter Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /9 DIM800DCS12-A000 SEMICONDUCTOR Fig.3 Typical output characteristics Fig.4 Typical output characteristics Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 6 /9 DIM800DCS12-A000 SEMICONDUCTOR Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /9 DIM800DCS12-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1600 gms Module outline type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 8 /9 DIM800DCS12-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 9 /9