ELPIDA EBD25UC8AAFA-6B

PRELIMINARY DATA SHEET
256MB Unbuffered DDR SDRAM DIMM
EBD25UC8AAFA-6B (32M words × 64 bits, 1 Rank)
Features
The EBD25UC8AAFA-6B is 32M words × 64 bits, 1
rank Double Data Rate (DDR) SDRAM unbuffered
module, mounting 8 pieces of 256M bits DDR SDRAM
sealed in TSOP package. Read and write operations
are performed at the cross points of the CK and the
/CK. This high-speed data transfer is realized by the 2
bits prefetch-pipelined architecture. Data strobe (DQS)
both for read and write are available for high speed and
reliable data bus design. By setting extended mode
register, the on-chip Delay Locked Loop (DLL) can be
set enable or disable. This module provides high
density mounting without utilizing surface mount
technology.
Decoupling capacitors are mounted
beside each TSOP on the module board.
• 184-pin socket type dual in line memory module
(DIMM)
 PCB height: 31.75mm
 Lead pitch: 1.27mm
• 2.5V power supply
• Data rate: 333Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs and outputs are synchronized with DQS
• 4 internal banks for concurrent operation
(Component)
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
 7.8µs maximum average periodic refresh interval
• 2 variations of refresh
 Auto refresh
 Self refresh
L
EO
Description
t
uc
od
Pr
Document No. E0390E10 (Ver. 1.0)
Date Published June 2003 (K) Japan
URL: http://www.elpida.com
This product became EOL in June, 2004.
Elpida Memory, Inc. 2003
EBD25UC8AAFA-6B
Ordering Information
Part number
Data rate
Mbps (max.)
Component JEDEC speed bin
(CL-tRCD-tRP)
Package
Contact
pad
Mounted devices
EBD25UC8AAFA-6B
333
DDR333B (2.5-3-3)
Gold
M2S56D30ATP-60
184-pin DIMM
Pin Configurations
Front side
1 pin
52 pin 53 pin
EO
93 pin
92 pin
144 pin 145 pin 184 pin
Back side
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
47
NC
93
VSS
139
VSS
2
DQ0
48
A0
94
DQ4
140
NC
3
VSS
49
NC
95
DQ5
141
A10
4
DQ1
50
VSS
96
VDD
142
NC
5
DQS0
51
NC
97
DM0/DQS9
143
VDD
6
DQ2
52
BA1
98
DQ6
144
NC
7
VDD
53
DQ32
99
DQ7
145
VSS
8
DQ3
54
VDD
100
VSS
146
DQ36
9
NC
55
DQ33
101
NC
147
DQ37
10
NC
56
DQS4
102
NC
148
VDD
11
VSS
57
12
DQ8
58
13
DQ9
59
14
DQS1
60
15
VDD
61
DQ40
16
CK1
62
VDD
L
Pin No.
Pr
DQ34
103
NC
149
DM4/DQS13
VSS
104
VDD
150
DQ38
BA0
105
DQ12
151
DQ39
DQ35
106
DQ13
152
VSS
63
/WE
VSS
64
DQ41
19
DQ10
65
/CAS
20
DQ11
66
VSS
21
CKE0
67
DQS5
22
VDD
68
DM1/DQS10
153
DQ44
108
VDD
154
/RAS
109
DQ14
155
DQ45
110
DQ15
156
VDD
111
NC
157
/CS0
112
VDD
158
NC
113
NC
159
DM5/DQS14
DQ42
114
DQ20
160
VSS
161
DQ46
162
DQ47
t
uc
/CK1
18
od
17
107
23
DQ16
69
DQ43
115
A12
24
DQ17
70
VDD
116
VSS
25
DQS2
71
NC
117
DQ21
163
NC
26
VSS
72
DQ48
118
A11
164
VDD
27
A9
73
DQ49
119
DM2/DQS11
165
DQ52
28
DQ18
74
VSS
120
VDD
166
DQ53
29
A7
75
/CK2
121
DQ22
167
NC
30
VDD
76
CK2
122
A8
168
VDD
Preliminary Data Sheet E0390E10 (Ver. 1.0)
2
EBD25UC8AAFA-6B
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
31
DQ19
77
VDD
123
DQ23
169
DM6/DQS15
32
A5
78
DQS6
124
VSS
170
DQ54
33
DQ24
79
DQ50
125
A6
171
DQ55
34
VSS
80
DQ51
126
DQ28
172
VDD
35
DQ25
81
VSS
127
DQ29
173
NC
36
DQS3
82
VDDID
128
VDD
174
DQ60
37
A4
83
DQ56
129
DM3/DQS12
175
DQ61
38
VDD
84
DQ57
130
A3
176
VSS
39
DQ26
85
VDD
131
DQ30
177
DM7/DQS16
40
DQ27
86
DQS7
132
VSS
178
DQ62
A2
87
DQ58
133
DQ31
179
DQ63
42
VSS
88
DQ59
134
NC
180
VDD
43
A1
89
VSS
135
NC
181
SA0
44
NC
90
NC
136
VDD
182
SA1
45
NC
91
SDA
137
CK0
183
SA2
46
VDD
92
SCL
138
/CK0
184
VDDSPD
L
EO
41
t
uc
od
Pr
Preliminary Data Sheet E0390E10 (Ver. 1.0)
3
EBD25UC8AAFA-6B
Pin Description
Pin name
Function
A0 to A12
Address input
Row address
Column address
BA0, BA1
Bank select address
DQ0 to DQ63
Data input/output
/RAS
Row address strobe command
/CAS
Column address strobe command
A0 to A12
A0 to A9
Write enable
/CS0
Chip select
CKE0
Clock enable
CK0 to CK2
Clock input
/CK0 to /CK2
Differential clock input
DQS0 to DQS7
Input and output data strobe
DM0 to DM7/DQS9 to DQS16
Input mask
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0 to SA2
Serial address input
VDD
VDDSPD
VREF
VSS
NC
Power for internal circuit
Power for serial EEPROM
Input reference voltage
Ground
VDD identification flag
Pr
VDDID
L
EO
/WE
No connection
t
uc
od
Preliminary Data Sheet E0390E10 (Ver. 1.0)
4
EBD25UC8AAFA-6B
Serial PD Matrix
Byte No.
0
1
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
1
0
0
0
0
0
0
0
80H
128 bytes
0
0
0
0
1
0
0
0
08H
256 bytes
2
Memory type
0
0
0
0
0
1
1
1
07H
DDR SDRAM
3
Number of row address
0
0
0
0
1
1
0
1
0DH
13
Number of column address
0
0
0
0
1
0
1
0
0AH
10
5
Number of DIMM ranks
0
0
0
0
0
0
0
1
01H
1
6
Module data width
0
1
0
0
0
0
0
0
40H
64
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
0
04H
SSTL2
9
DDR SDRAM cycle time, CL = 2.5
0
1
1
0
0
0
0
0
60H
6.0ns*1
10
SDRAM access from clock (tAC)
0
1
1
1
0
0
0
0
70H
0.70ns*1
11
DIMM configuration type
0
0
0
0
0
0
0
0
00H
None.
12
Refresh rate/type
1
0
0
0
0
0
1
0
82H
7.6µs
13
Primary SDRAM width
0
0
0
0
1
0
0
0
08H
×8
14
Error checking SDRAM width
0
0
0
0
0
0
0
0
00H
None.
0
0
0
0
0
0
0
1
01H
1 CLK
0
0
0
0
1
1
1
0
0EH
2,4,8
0
0
0
0
0
1
0
0
04H
4
EO
4
16
17
19
20
Pr
18
SDRAM device attributes:
Minimum clock delay back-to-back
column access
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
L
15
0
0
0
1
1
0
0
0CH
2, 2.5
0
0
0
0
0
0
0
1
01H
0
0
0
0
0
0
0
1
0
02H
1
1
0
0
0
0
0
20H
Differential
Clock
21
SDRAM module attributes
0
0
22
SDRAM device attributes: General
1
1
23
Minimum clock cycle time at CL = 2
0
1
24
Maximum data access time (tAC) from
0
clock at CL = 2
1
0
0
25 to 26
od
0
0
0
0
0
0
C0H
VDD ± 0.2V
1
1
0
1
0
1
75H
7.5ns*1
1
1
0
0
0
0
70H
0.70ns*1
0
0
0
0
0
0
00H
0
0
1
0
0
0
48H
18ns
1
1
0
0
0
0
30H
12ns
0
0
48H
18ns
1
0
2AH
42ns
0
0
40H
256M bytes
0
0
80H
0.80ns*1
0
0
80H
0.80ns*1
0
1
45H
0.45ns*1
27
Minimum row precharge time (tRP)
0
1
28
Minimum row active to row active
delay (tRRD)
0
0
29
Minimum /RAS to /CAS delay (tRCD)
0
1
0
0
1
0
30
Minimum active to precharge time
(tRAS)
0
0
1
0
1
0
31
Module rank density
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
32
33
34
Address and command setup time
1
before clock (tIS)
Address and command hold time after
1
clock (tIH)
Data input setup time before clock
0
(tDS)
Preliminary Data Sheet E0390E10 (Ver. 1.0)
5
t
uc
0
EBD25UC8AAFA-6B
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
35
Data input hold time after clock (tDH)
0
1
0
0
0
1
0
1
45H
0.45ns*1
36 to 40
Superset information
0
0
0
0
0
0
0
0
00H
Future use
41
Active command period (tRC)
0
0
1
1
1
1
0
0
3CH
60ns*1
42
Auto refresh to active/
Auto refresh command cycle (tRFC)
0
1
0
0
1
0
0
0
48H
72ns*1
43
SDRAM tCK cycle max. (tCK max.)
0
0
1
1
1
1
0
0
3CH
15ns*1
44
Dout to DQS skew
0
0
1
0
1
1
0
1
2DH
0.45ns*1
45
Data hold skew (tQHS)
0
1
0
1
0
1
0
1
55H
0.55ns*1
46 to 61
Superset information
0
0
0
0
0
0
0
0
00H
Future use
62
SPD Revision
0
0
0
0
0
0
0
0
00H
EO
Checksum for bytes 0 to 62
0
0
1
0
0
0
1
0
22H
64 to 65
Manufacturer’s JEDEC ID code
0
1
1
1
1
1
1
1
7FH
Continuation
code
66
Manufacturer’s JEDEC ID code
1
1
1
1
1
1
1
0
FEH
Elpida Memory
67 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00H
72
Manufacturing location
×
×
×
×
×
×
×
×
××
(ASCII-8bit
code)
73
Module part number
0
1
0
0
0
1
0
1
45H
E
74
Module part number
0
1
0
0
0
0
1
0
42H
B
75
Module part number
0
1
0
0
0
1
0
0
44H
D
76
Module part number
0
0
1
1
0
0
1
0
32H
2
77
Module part number
0
0
1
1
0
1
0
1
35H
5
78
Module part number
0
1
0
1
0
1
0
1
55H
U
L
63
Module part number
80
Module part number
81
Module part number
82
Module part number
83
Module part number
84
Module part number
0
1
0
0
0
0
1
1
43H
C
0
0
1
1
1
0
0
0
38H
8
0
1
0
0
0
0
0
1
41H
A
0
1
0
0
0
0
0
1
41H
A
0
1
0
0
0
1
1
0
46H
F
0
1
0
0
0
0
0
1
41H
A
85
Module part number
0
0
86
Module part number
0
0
87
Module part number
0
1
88 to 90
Module part number
0
0
91
Revision code
0
0
92
Revision code
0
0
Manufacturing date
×
×
94
Manufacturing date
×
×
95 to 98
Module serial number
99 to 127
Manufacture specific data
1
0
1
1
0
1
2DH
—
1
1
0
1
1
0
36H
6
0
0
0
0
1
0
42H
B
1
0
0
0
0
0
20H
(Space)
1
1
0
0
0
0
30H
Initial
1
0
0
0
0
0
20H
×
×
×
×
×
×
×
×
×
×
××
×
×
××
Note: 1. These specifications are defined based on component specification, not module.
Preliminary Data Sheet E0390E10 (Ver. 1.0)
6
(Space)
Year code
(HEX)
Week code
(HEX)
t
uc
93
od
Pr
79
EBD25UC8AAFA-6B
Block Diagram
/CS0
RS
RS
DM0/DQS9
DQS0
8
RS
DQ0 to DQ7
DQS
/CS
DQ
U1
DM
RS
RS
DM1/DQS10
DQS1
8
RS
DQ8 to DQ15
DQS
/CS
DM
DQ
U11
RS
RS
DM2/DQS11
DQS2
8
RS
DQ16 to DQ23
DQS
/CS
DQ
U3
DM
RS
RS
DM3/DQS12
8
RS
DQ24 to DQ31
DQS
/CS
DQ
U13
DM
RS
RS
DM4/DQS13
DQS4
8
RS
DQ32 to DQ39
DQS
/CS
DM
DQ
U14
RS
RS
DM5/DQS14
DQS5
8
RS
DQ40 to DQ47
DQS
/CS
DQ
U6
DM
RS
RS
DM6/DQS15
DQS6
L
EO
DQS3
8
RS
DQ48 to DQ55
DQS
/CS
DM
DQ
U16
RS
RS
DM7/DQS16
DQS7
8
DQ56 to DQ63
RS
DQS
/CS
DQ
U8
DM
Pr
5.1Ω
A0 to A12
* U1, U3, U6, U8, U11, U13, U14, U16 : 256M bits DDR SDRAM
U20: 2k bits EEPROM
RS: 22Ω
VDD
U1, U3, U6, U8, U11, U13, U14, U16
VSS
U1, U3, U6, U8, U11, U13, U14, U16
VDDID
Clock wiring
/RAS
/RAS (U1, U3, U6, U8, U11, U13, U14, U16)
5.1Ω
/CAS
/CAS (U1, U3, U6, U8, U11, U13, U14, U16)
5.1Ω
/WE
/WE (U1, U3, U6, U8, U11, U13, U14, U16)
CKE0
CKE (U1, U3, U6, U8, U11, U13, U14, U16)
od
open
BA0, BA1 (U1, U3, U6, U8, U11, U13, U14, U16)
5.1Ω
U1, U3, U6, U8, U11, U13, U14, U16
VREF
A0 to A12 (U1, U3, U6, U8, U11, U13, U14, U16)
5.1Ω
BA0, BA1
Serial PD
Clock input
DDR SDRAMS
CK0, /CK0
2DRAM loads
CK1, /CK1
3DRAM loads
CK2, /CK2
3DRAM loads
Note: Wire per Clock loading table/Wiring diagrams.
SCL
SCL
SDA
SDA
U20
A0
A1
A2
t
uc
SA0 SA1 SA2
Notes:
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
Preliminary Data Sheet E0390E10 (Ver. 1.0)
7
EBD25UC8AAFA-6B
Logical Clock Net Structure
6DRAM loads
CLK
5DRAM loads
DRAM1
DRAM2
R = 120Ω
DRAM1
R = 120Ω
DRAM3
DRAM2
DRAM3
DIMM
connector
DIMM
connector
DRAM4
Capacitance
DRAM5
DRAM5
DRAM6
DRAM6
/CLK
EO
4DRAM loads
3DRAM loads
DRAM1
DRAM2
R = 120Ω
R = 120Ω
Capacitance
DIMM
connector
L
2DRAM loads
Capacitance
Capacitance
DRAM5
DRAM5
DRAM6
Capacitance
1DRAM loads
DRAM1
Capacitance
Pr
Capacitance
R = 120Ω
Capacitance
DIMM
connector
Capacitance
DRAM3
DIMM
connector
R = 120Ω
DRAM1
Capacitance
DRAM3
DIMM
connector
Capacitance
Capacitance
DRAM5
od
Capacitance
Capacitance
t
uc
Preliminary Data Sheet E0390E10 (Ver. 1.0)
8
EBD25UC8AAFA-6B
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD
–0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
8
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–40 to +100
°C
Note
1
EO
Notes: 1. DDR SDRAM component specification.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification)
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
VDD,VDDQ
2.3
2.5
2.7
V
1
L
0
0
0
V
VREF
0.49 × VDDQ
0.50 × VDDQ
0.51 × VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5 × VDDQ − 0.2V
0.5 × VDDQ
0.5 × VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
V
5, 6
VDDQ must be lower than or equal to VDD.
VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (DC) specifies the allowable DC execution of each differential input.
VID (DC) specifies the input differential voltage required for switching.
VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
t
uc
od
Notes: 1.
2.
3.
4.
5.
6.
Pr
VSS
Input reference voltage
Preliminary Data Sheet E0390E10 (Ver. 1.0)
9
EBD25UC8AAFA-6B
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
CKE ≥ VIH,
tRC = tRC (min.)
CKE ≥ VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
Operating current (ACTV-PRE)
IDD0
800
mA
Operating current
(ACTV-READ-PRE)
IDD1
960
mA
Idle power down standby current
IDD2P
80
mA
CKE ≤ VIL
Floating idle
Standby current
Active power down
standby current
Notes
1, 2, 9
1, 2, 5
4
IDD2F
280
mA
CKE ≥ VIH, /CS ≥ VIH
4, 5
DQ, DQS, DM = VREF
IDD3P
160
mA
CKE ≤ VIL
IDD3N
440
mA
IDD4R
1520
mA
IDD4W
1520
mA
Auto refresh current
IDD5
1200
mA
Self refresh current
IDD6
24
mA
Operating current
(4 banks interleaving)
IDD7A
2320
mA
Active standby current
EO
Operating current
(Burst read operation)
Operating current
(Burst write operation)
BL = 4
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
5, 6, 7
L
These IDD data are measured under condition that DQ pins are not connected.
One bank operation.
One bank active.
All banks idle.
Command/Address transition once per one cycle.
Data/Data mask transition twice per one cycle.
4 banks active. Only one bank is running at tRC = tRC (min.)
The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
Command/Address transition once per one every two clock cycles.
Pr
Notes: 1.
2.
3.
4.
5.
6.
7.
8.
9.
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
CKE ≥ VIH, BL = 2,
CL = 2.5
CKE ≥ VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
3
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Symbol
min.
Input leakage current
ILI
–16
Output leakage current
ILO
–5
Output high current
IOH
–16.8
Output low current
IOL
16.8
Note: 1. DDR SDRAM component specification.
max.
Unit
Test condition
16
µA
VDD ≥ VIN ≥ VSS
5
µA
VDD ≥ VOUT ≥ VSS
—
mA
VOUT = VTT + 0.84V
1
—
mA
VOUT = VTT – 0.84V
1
Notes
t
uc
od
Parameter
Preliminary Data Sheet E0390E10 (Ver. 1.0)
10
EBD25UC8AAFA-6B
Pin Capacitance (TA = 25°C, VDD = 2.5V ± 0.2V)
Parameter
Symbol
Pins
max.
Unit
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/CS, CKE
75
pF
Input capacitance
CI2
CK, /CK
60
pF
Data and DQS input/output
capacitance
CO
DQ, DQS
15
pF
Notes
AC Characteristics (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Componen Specification)
Parameter
EO
Clock cycle time
(CL = 2)
Symbol
min.
max
Unit
tCK
7.5
15
ns
tCK
6
15
ns
CK high-level width
tCH
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
tCK
CK half period
tHP
min
(tCH, tCL)
—
tCK
DQ output access time from
CK, /CK
tAC
–0.70
0.70
ns
DQS output access time from CK, /CK
tDQSCK
–0.60
0.60
ns
DQS to DQ skew
tDQSQ
—
0.45
ns
L
(CL = 2.5)
Notes
DQ/DQS output hold time from DQS
tQH
tHP – 0.55
—
ns
Data-out high-impedance time from CK, /CK
tHZ
–0.70
0.70
ns
1
Data-out low-impedance time from CK, /CK
tLZ
–0.70
0.70
ns
1
Read postamble
DQ and DM input setup time
DQ and DM input hold time
DQ and DM input pulse width
tRPRE
0.9
1.1
tCK
tRPST
0.4
0.6
tCK
tDS
0.45
—
ns
tDH
0.45
—
ns
tDIPW
1.75
—
ns
tWPRES
0
—
ns
od
Write preamble setup time
Pr
Read preamble
Write preamble
tWPRE
0.25
—
tCK
Write postamble
tWPST
0.4
0.6
tCK
Write command to first DQS latching transition
tDQSS
0.75
1.25
tCK
tDSS
0.2
—
tCK
DQS falling edge hold time from CK
tDSH
0.2
—
tCK
DQS input high pulse width
tDQSH
0.35
—
tCK
DQS input low pulse width
tDQSL
0.35
Address and control input setup time
tIS
0.8
Address and control input hold time
tIH
0.8
Mode register set command cycle time
tMRD
12
Active to Precharge command period
tRAS
42
Active to Active/Auto refresh command period
tRC
60
Auto refresh to Active/Auto refresh command period
tRFC
72
Active to Read/Write delay
tRCD
18
Precharge to active command period
tRP
18
Preliminary Data Sheet E0390E10 (Ver. 1.0)
11
2
t
uc
DQS falling edge to CK setup time
3
—
tCK
—
ns
6
—
ns
6
—
ns
120000
ns
—
ns
—
ns
—
ns
—
ns
EBD25UC8AAFA-6B
Parameter
Symbol
min.
max
Unit
Active to active command period
tRRD
12
—
ns
Write recovery time
tWR
15
—
ns
Auto precharge write recovery and precharge time
tDAL
35
—
ns
Internal write to Read command delay
tWTR
1
—
tCK
Exit self refresh to non-read command
tXSNR
75

ns
Exit self refresh to read command
tXSRD
200

tCK
Exit power down to any non-read command
tXPNR
1

tCK
Exit precharge power down to read command
tXPRD
1

tCK
5
Average periodic refresh interval
tREF
—
7.8
µs
4
Notes: 1
Notes
2.
3.
4.
5.
6.
L
EO
tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These
parameters are not referenced to a specific voltage level, but specify when the device output is no longer
driving (HZ), or begins driving (LZ).
The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
The specific requirement is that DQS be valid (High, Low, or at some point on a valid transition) on or
before this CK edge. A valid transition is defined as monotonic, and meeting the input slew rate
specifications of the device. When no writes were previously in progress on the bus, DQS will be
transitioning from High-Z to logic Low. If a previous write was in progress, DQS could be High, Low, or
transitioning from High to Low at this time, depending on tDQSS.
A maximum of eight auto refresh commands can be posted to any given DDR SDRAM device.
tXPRD should be 200 tCK in the condition of the unstable CK operation during the power down mode.
For command/address and CK and /CK slew rate ≥ 1.0V/ns.
t
uc
od
Pr
Preliminary Data Sheet E0390E10 (Ver. 1.0)
12
EBD25UC8AAFA-6B
Pin Functions
CK, /CK (input pin)
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross
point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross
point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and
the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK.
/CS (input pin)
When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
EO
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 to A12 (input pins)
Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the
VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the
cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address
becomes the starting address of a burst operation.
L
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge
command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write
command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled.
[Bank Select Signal Table]
Bank 0
BA0
BA1
L
L
H
Bank 2
L
Bank 3
H
Remark: H: VIH. L: VIL.
L
od
Bank 1
Pr
BA0, BA1 (input pin)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
H
H
t
uc
CKE (input pin)
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the
CKE is driven low and exited when it resumes to high.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold
time tIH.
DQ (input and output pins)
Data are input to and output from these pins.
DQS (input and output pin)
DQS provide the read data strobes (as output) and the write data strobes (as input).
Preliminary Data Sheet E0390E10 (Ver. 1.0)
13
EBD25UC8AAFA-6B
DM (input pins): DM is the reference signal of the data input mask function. DMs are sampled at the cross point of
DQS and VREF
VDD (power supply pins)
2.5V is applied. (VDD is for the internal circuit.)
VDDSPD (power supply pin)
2.5V is applied (For serial EEPROM).
VSS (power supply pin)
Ground is connected.
EO
Detailed Operation Part and Timing Waveforms
Refer to M2S56D20/30/40ATP datasheet.
L
t
uc
od
Pr
Preliminary Data Sheet E0390E10 (Ver. 1.0)
14
EBD25UC8AAFA-6B
Physical Outline
Unit: mm
3.18max
4.00 min
(DATUM -A-)
(64.48)
2.30
Component area
(Front)
1
92
EO
B
64.77
A
1.27 ± 0.10
49.53
133.35
128.95
2.50 ± 0.20
31.75
3.00
Detail B
(DATUM -A-)
1.27
6.62
2.175
R 0.90
od
0.20 ± 0.15
4.00
Detail A
(Back)
Pr
R 2.00
184
17.80
L
93
10.00
2 – φ 2.50
1.00 ± 0.05
3.80
6.35
1.80 ± 0.10
ECA-TS2-0094-01
t
uc
Preliminary Data Sheet E0390E10 (Ver. 1.0)
15
EBD25UC8AAFA-6B
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
MDE0202
EO
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
L
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
3
od
Pr
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
STATUS BEFORE INITIALIZATION OF MOS DEVICES
t
uc
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0390E10 (Ver. 1.0)
16
EBD25UC8AAFA-6B
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
EO
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
L
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
M01E0107
t
uc
od
Pr
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
Preliminary Data Sheet E0390E10 (Ver. 1.0)
17