PRELIMINARY DATA SHEET 256MB Unbuffered DDR2 SDRAM DIMM EBE25EC8AAFA (32M words × 72 bits, 1 Rank) Features The EBE25EC8AAFA is 32M words × 72 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 9 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each FBGA (µBGA) on the module board. • 240-pin socket type dual in line memory module (DIMM) PCB height: 30.0mm Lead pitch: 1.0mm Lead-free • 1.8V power supply • Data rate: 533Mbps/400Mbps (max.) • 1.8V (SSTL_18 compatible) I/O • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver • DQS is edge aligned with data for READs: centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation (components) • Data mask (DM) for write data • Burst lengths: 4, 8 • /CAS Latency (CL): 3, 4, 5 • Auto precharge operation for each burst access • Auto refresh and self refresh modes • 7.8µs average periodic refresh interval • Posted CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • /DQS can be disabled for single-ended Data Strobe operation L EO Description Note: Do not push the components or drop the modules in order to avoid mechanical defects, which may result in electrical defects. t uc od Pr This product became EOL in April, 2005. Document No. E0466E10 (Ver. 1.0) Date Published February 2004 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004 EBE25EC8AAFA Ordering Information Part number Data rate Mbps (max.) Component JEDEC speed bin (CL-tRCD-tRP) EBE25EC8AAFA-5C-E 533 DDR2-533 (4-4-4) Contact pad Package EBE25EC8AAFA-4A-E 400 DDR2-400 (3-3-3) EBE25EC8AAFA-4C-E 400 DDR2-400 (4-4-4) Mounted devices EDE2508AASE-5C 240-pin DIMM (lead-free) Gold EDE2508AASE -5C, -4A EDE2508AASE -5C, -4A, -4C Pin Configurations Front side 1 pin EO 121 pin 64 pin 65 pin 120 pin 184 pin 185 pin 240 pin Back side Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREF 61 A4 121 VSS 181 VDD 2 VSS 62 VDD 122 DQ4 182 A3 3 DQ0 63 A2 123 DQ5 183 A1 4 DQ1 64 VDD 124 VSS 184 VDD 5 VSS 65 VSS 125 DM0 185 CK0 6 /DQS0 66 VSS 126 NC 186 /CK0 7 DQS0 67 VDD 127 VSS 187 VDD 8 VSS 68 NC 128 DQ6 188 A0 9 DQ2 69 VDD 129 DQ7 189 VDD 10 DQ3 70 A10 130 VSS 190 BA1 11 VSS 71 BA0 131 DQ12 191 VDD 12 DQ8 72 VDD 132 DQ13 13 DQ9 73 /WE 14 VSS 74 /CAS 15 /DQS1 75 VDD 16 DQS1 76 NC 17 VSS 77 NC 18 NC 78 VDD 19 NC 79 VSS 20 VSS 80 DQ32 21 DQ10 81 DQ33 141 DQ15 201 VSS 22 DQ11 82 VSS 142 VSS 202 DM4 23 VSS 83 /DQS4 143 DQ20 203 NC 24 DQ16 84 DQS4 144 DQ21 204 VSS 25 DQ17 85 VSS 145 VSS 205 DQ38 26 VSS 86 DQ34 146 DM2 27 /DQS2 87 DQ35 147 NC 207 28 DQS2 88 VSS 148 VSS 208 L Pin No. /RAS od Pr 192 133 VSS 193 /CS0 134 DM1 194 VDD 135 NC 195 ODT0 136 VSS 196 NC 137 CK1 197 VDD /CK1 198 VSS VSS 199 DQ36 140 DQ14 200 DQ37 2 206 t Preliminary Data Sheet E0466E10 (Ver. 1.0) uc 138 139 DQ39 VSS DQ44 EBE25EC8AAFA Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 29 VSS 89 DQ40 149 DQ22 209 DQ45 30 DQ18 90 DQ41 150 DQ23 210 VSS 31 DQ19 91 VSS 151 VSS 211 DM5 32 VSS 92 /DQS5 152 DQ28 212 NC 33 DQ24 93 DQS5 153 DQ29 213 VSS 34 DQ25 94 VSS 154 VSS 214 DQ46 35 VSS 95 DQ42 155 DM3 215 DQ47 36 /DQS3 96 DQ43 156 NC 216 VSS 37 DQS3 97 VSS 157 VSS 217 DQ52 38 VSS 98 DQ48 158 DQ30 218 DQ53 EO DQ26 99 DQ49 159 DQ31 219 VSS 40 DQ27 100 VSS 160 VSS 220 CK2 41 VSS 101 SA2 161 CB4 221 /CK2 42 CB0 102 NC 162 CB5 222 VSS 43 CB1 103 VSS 163 VSS 223 DM6 44 VSS 104 /DQS6 164 DM8 224 NC 45 /DQS8 105 DQS6 165 NC 225 VSS 46 DQS8 106 VSS 166 VSS 226 DQ54 47 VSS 107 DQ50 167 CB6 227 DQ55 48 CB2 108 DQ51 168 CB7 228 VSS 49 CB3 109 VSS 169 VSS 229 DQ60 50 VSS 110 DQ56 170 VDD 230 DQ61 51 VDD 111 52 CKE0 112 53 VDD 113 54 NC 114 55 NC 115 56 VDD 116 57 A11 117 DQ59 58 A7 118 VSS 59 VDD 119 SDA 60 A5 120 SCL L 39 171 NC 231 VSS 172 VDD 232 DM7 /DQS7 173 NC 233 NC Pr DQ57 VSS DQS7 174 NC 234 VSS VSS 175 VDD 235 DQ62 DQ58 176 A12 236 DQ63 od 177 A9 237 VSS 178 VDD 238 VDDSPD 179 A8 239 SA0 180 A6 240 SA1 t uc Preliminary Data Sheet E0466E10 (Ver. 1.0) 3 EBE25EC8AAFA Pin Description Function A0 to A12 Address input Row address Column address A10 (AP) Auto precharge BA0, BA1 Bank select address DQ0 to DQ63 Data input/output CB0 to CB7 Check bit (Data input/output) /RAS Row address strobe command /CAS Column address strobe command /WE Write enable EO Pin name /CS0 Chip select CKE0 Clock enable CK0 to CK2 Clock input A0 to A12 A0 to A9 /CK0 to /CK2 Differential clock input DQS0 to DQS8, /DQS0 to /DQS8 Input and output data strobe DM0 to DM8 Input mask SCL SA0 to SA2 VDD VDDSPD Clock input for serial PD L SDA VREF ODT0 NC Serial address input Power for internal circuit Power for serial EEPROM Input reference voltage Pr VSS Data input/output for serial PD Ground ODT control No connection t uc od Preliminary Data Sheet E0466E10 (Ver. 1.0) 4 EBE25EC8AAFA Serial PD Matrix Byte No. 0 1 Function described Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 1 0 0 0 0 0 0 0 80H 128 bytes 0 0 0 0 1 0 0 0 08H 256 bytes Memory type 0 0 0 0 1 0 0 0 08H DDR2 SDRAM 3 Number of row address 0 0 0 0 1 1 0 1 0DH 13 4 Number of column address 0 0 0 0 1 0 1 0 0AH 10 5 Number of DIMM ranks 0 1 1 0 0 0 0 0 60H 1 6 Module data width 0 1 0 0 1 0 0 0 48H 72 7 Module data width continuation 0 0 0 0 0 0 0 0 00H 0 8 Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H SSTL 1.8V 9 DDR SDRAM cycle time, CL = 5 -5C 0 0 1 1 1 1 0 1 3DH 3.75ns* 0 1 0 1 0 0 0 0 50H 5.0ns* 1 0 1 0 1 0 0 0 0 50H 0.5ns* 1 0 1 1 0 0 0 0 0 60H 0.6ns* 1 EO 2 -4A, -4C 10 SDRAM access from clock (tAC) -5C -4A, -4C DIMM configuration type 0 0 0 0 0 0 1 0 02H ECC 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8µs L 11 13 Primary SDRAM width 0 0 0 0 1 0 0 0 08H ×8 14 Error checking SDRAM width 0 0 0 0 1 0 0 0 08H ×8 Reserved 0 0 0 0 0 0 0 0 00H 0 0 0 0 0 1 1 0 0 0CH 4,8 15 16 18 Pr 17 SDRAM device attributes: Burst length supported SDRAM device attributes: Number of banks on SDRAM device SDRAM device attributes: /CAS latency 0 0 0 0 0 1 0 0 04H 4 0 0 1 1 1 0 0 0 38H 3, 4, 5 0 0 0 0 0 0 0 0 00H 0 1 Reserved 20 DIMM type information 0 0 0 0 0 0 1 0 02H Unbuffered 21 SDRAM module attributes 0 0 0 0 0 0 0 0 00H Normal 22 SDRAM device attributes: General 0 0 1 1 0 0 0 0 30H VDD ± 0.1V 23 Minimum clock cycle time at CL = 4 -5C 0 0 1 1 1 1 0 1 3DH 3.75ns* 0 1 0 1 0 0 0 0 50H 5.0ns* 1 Maximum data access time (tAC) from clock at CL = 4 0 -5C 1 0 1 0 0 0 0 50H 0.5ns* 1 -4A, -4C 24 25 1 1 0 0 0 0 1 0 1 0 0 1 1 1 1 1 1 Maximum data access time (tAC) from clock at CL = 3 0 -5C, -4A 1 1 0 0 0 1 1 1 1 1 Minimum clock cycle time at CL = 3 -5C, -4A -4C 26 -4C 1 Preliminary Data Sheet E0466E10 (Ver. 1.0) 5 0 0 60H 0.6ns* 1 0 0 50H 5.0ns* 1 1 1 FFH Undefined* 0 0 60H 0.6ns* 1 1 FFH Undefined* 1 1 1 t 0 1 uc -4A, -4C od 19 EBE25EC8AAFA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 27 Minimum row precharge time (tRP) -5C, -4A 0 0 1 1 1 1 0 0 3CH 15ns 0 1 0 1 0 0 0 0 50H 20ns 0 0 0 1 1 1 1 0 1EH 7.5ns 0 0 1 1 1 1 0 0 3CH 15ns -4C 28 29 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) -5C, -4A -4C 30 31 1 0 1 0 0 0 0 50H 20ns 0 0 1 0 1 1 0 1 2DH 45ns Module rank density 0 1 0 0 0 0 0 0 40H 256M bytes Address and command setup time before clock (tIS) -5C 0 0 1 0 0 1 0 1 25H 0.25ns* 1 0 0 1 1 0 1 0 1 35H 0.35ns* 1 Address and command hold time after clock (tIH) 0 -5C 0 1 1 1 0 0 0 38H 0.38ns* 1 0 1 0 0 1 0 0 0 48H 0.48ns* 1 0 0 0 1 0 0 0 0 10H 0.10ns* 1 0 0 0 1 0 1 0 1 15H 0.15ns* 1 0 0 1 0 0 0 1 1 23H 0.23ns* 1 0 0 1 0 1 0 0 0 28H 0.28ns* 1 EO 0 Minimum active to precharge time (tRAS) 32 -4A, -4C 33 -4A, -4C 34 L Data input setup time before clock (tDS) -5C -4A, -4C 35 Data input hold time after clock (tDH) -5C -4A, -4C 1 Write recovery time (tWR) 0 0 1 1 1 1 0 0 3CH 15ns* 37 Internal write to read command delay (tWTR) -5C 0 0 0 1 1 1 1 0 1EH 7.5ns* 0 0 1 0 1 0 0 0 28H 10ns* -4A, -4C Pr 36 1 1 Internal read to precharge command delay (tRTP) 0 0 0 1 1 1 1 0 1EH 7.5ns* 39 Memory analysis probe characteristics 0 0 0 0 0 0 0 0 00H TBD 40 Extension of Byte 41 and 42 0 0 0 0 0 0 0 0 00H Undefined 41 Active command period (tRC) -5C, -4A, 0 0 1 1 1 1 0 0 3CH 60ns* 1 0 1 0 0 0 0 0 1 41H 65ns* 1 0 0 1 0 1 1 4BH 75ns* 1 0 0 0 0 0 0 80H 8ns* -4C Auto refresh to active/ Auto refresh command cycle (tRFC) 0 1 43 SDRAM tCK cycle max. (tCK max.) 1 0 44 Dout to DQS skew -5C 0 0 0 1 1 1 0 0 1 0 0 0 0 0 1 0 1 0 0 0 1 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 -4A, -4C 45 Data hold skew (tQHS) -5C -4A, -4C 46 PLL relock time 47 to 61 Preliminary Data Sheet E0466E10 (Ver. 1.0) 6 1 1 0 1EH 0.30ns* 1 1 1 23H 0.35ns* 1 0 0 28H 0.40ns* 1 0 1 2DH 0.45ns* 1 0 0 00H Undefined 0 0 00H t 42 1 uc od 38 EBE25EC8AAFA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 62 SPD Revision 0 0 0 1 0 0 0 0 10H Rev. 1.0 63 Checksum for bytes 0 to 62 -5C 1 0 0 1 0 1 0 0 94H -4A 0 0 0 1 1 0 0 0 18H -4C 1 0 0 1 0 0 1 1 93H 64 to 65 Manufacturer’s JEDEC ID code 0 1 1 1 1 1 1 1 7FH Continuation code 66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH Elpida Memory 67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H 72 Manufacturing location × × × × × × × × ×× (ASCII-8bit code) EO Module part number 0 1 0 0 0 1 0 1 45H E 74 Module part number 0 1 0 0 0 0 1 0 42H B 75 Module part number 0 1 0 0 0 1 0 1 45H E 76 Module part number 0 0 1 1 0 0 1 0 32H 2 77 Module part number 0 0 1 1 0 1 0 1 35H 5 78 Module part number 0 1 0 0 0 1 0 1 45H E 79 Module part number 0 1 0 0 0 0 1 1 43H C 80 Module part number 0 0 1 1 1 0 0 0 38H 8 81 Module part number 0 1 0 0 0 0 0 1 41H A L 73 Module part number 0 1 0 0 0 0 0 1 41H A 83 Module part number 0 1 0 0 0 1 1 0 46H F 84 Module part number 0 1 0 0 0 0 0 1 41H A 85 Module part number 0 0 1 0 1 1 0 1 2DH — 86 Module part number -5C 0 0 1 1 0 1 0 1 35H 5 0 0 1 1 0 1 0 0 34H 4 87 Module part number -4A 0 1 0 0 0 0 0 1 41H A 0 1 0 0 0 0 1 1 43H C 0 0 -4A, -4C -5C, -4C Module part number 89 Module part number 0 1 90 Module part number 0 0 Revision code 0 0 92 Revision code 0 0 93 Manufacturing date × × 94 Manufacturing date × × 95 to 98 Module serial number 99 to 127 Manufacture specific data 1 0 1 1 0 1 2DH — 0 0 0 1 0 1 45H E 1 0 0 0 0 0 20H (Space) 1 1 0 0 0 0 30H Initial 1 0 0 0 0 0 20H (Space) × × × × × × ×× × × × × Year code (BCD) Week code (BCD) uc 91 od 88 Pr 82 × × ×× Note: These specifications are defined based on component specification, not module. t Preliminary Data Sheet E0466E10 (Ver. 1.0) 7 EBE25EC8AAFA Block Diagram /CS0 RS1 RS1 /DQS0 /DQS4 RS1 RS1 DQS0 DQS4 RS1 DM0 DM 8 RS1 DQ0 to DQ7 RS1 /CS DQS /DQS DQ0 to DQ7 DM4 /CS DQS /DQS DM D0 8 RS1 DQ32 to DQ39 RS1 DQ0 to DQ7 D4 RS1 /DQS1 /DQS5 EO RS1 RS1 DQS1 DQS5 RS1 DM1 8 RS1 /CS DQS /DQS DM5 DM RS1 DQ8 to DQ15 DQ0 to DQ7 D1 RS1 DQ40 to DQ47 RS1 DQ0 to DQ7 D5 RS1 /DQS2 /DQS6 RS1 RS1 DQS2 DQS6 RS1 RS1 L /CS DQS /DQS DM DM2 8 /CS DQS /DQS DM 8 RS1 DQ16 to DQ23 DQ0 to DQ7 DM6 8 D2 /CS DQS /DQS DM RS1 DQ48 to DQ55 RS1 DQ0 to DQ7 D6 RS1 /DQS3 /DQS7 Pr RS1 DQS3 RS1 DQS7 RS1 /CS DQS /DQS DM DM3 8 RS1 DQ24 to DQ31 DQ0 to DQ7 RS1 D3 8 RS1 DQS8 A0 to A12: SDRAMs (D0 to D8) RS2 RS1 /RAS: SDRAMs (D0 to D8) DM8 /CAS: SDRAMs (D0 to D8) CB0 to CB7 8 RS2 /CAS RS2 /WE: SDRAMs (D0 to D8) CKE: SDRAMs (D0 to D8) ODT0 ODT:SDRAMs (D0 to D8) VREF SDRAMs (D0 to D8) VDD SDRAMs (D0 to D8) VSS SDRAMs (D0 to D8) D8 Serial PD SCL SPD RS1 /CS DQS /DQS DM DQ0 to DQ7 SA0 SA1 SA2 Notes : uc /WE CKE0 VDDSPD D7 RS1 BA0 to BA1: SDRAMs (D0 to D8) /RAS DQ0 to DQ7 /DQS8 RS2 A0 to A12 RS1 DQ56 to DQ63 od RS2 BA0 to BA1 /CS DQS /DQS DM DM7 SDA SCL A0 U0 A1 A2 WP t 1. DQ wiring maybe changed within a byte. * D0 to D7 : 256M bits DDR2 SDRAM SDA 2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships U0 : 2k bits EEPROM must be meintained as shown. Rs1 : 22Ω 3. Refer to the appropriate clock wiring topology Rs2 : 5.1Ω under the DIMM wiring details section of this document. Preliminary Data Sheet E0466E10 (Ver. 1.0) 8 EBE25EC8AAFA Logical Clock Net Structure 3DRAM loads R = 200Ω DRAM C1 DRAM C1 DIMM connector EO R = 200Ω R = 200Ω DRAM C1 L t uc od Pr Preliminary Data Sheet E0466E10 (Ver. 1.0) 9 EBE25EC8AAFA Electrical Specifications • All voltages are referenced to VSS (GND). Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VT –0.5 to +2.3 V Supply voltage relative to VSS VDD –0.5 to +2.3 V Short circuit output current IOS 50 mA Power dissipation PD 9 W Operating case temperature TC 0 to +85 °C Storage temperature Tstg –55 to +100 °C Note 1 EO Note: DDR2 SDRAM component specification. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Operating Conditions (TC = 0 to +85°C) (DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Notes Supply voltage VDD, VDDQ 4 1.8 1.9 V 0 0 0 V VDDSPD 1.7 — 3.6 V L 1.7 VSS VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V 1, 2 Termination voltage VTT VREF − 0.04 VREF VREF + 0.04 V 3 DC input logic high VIH (DC) VREF + 0.125 VDDQ + 0.3V V DC input low VIL (DC) −0.3 VREF – 0.125 V AC input logic high VIH (AC) VREF + 0.250 V AC input low VIL (AC) VREF − 0.250 V Pr Input reference voltage t uc od Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC). 3. VTT of transmitting device must track VREF of receiving device. 4. VDDQ must be equal to VDD. Preliminary Data Sheet E0466E10 (Ver. 1.0) 10 EBE25EC8AAFA DC Characteristics 1 (TC = 0 to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V) Parameter Symbol Grade max. Unit IDD0 -5C -4A, -4C 990 855 mA Operating current (ACT-READ-PRE) IDD1 -5C -4A, -4C 1125 990 mA IDD2P -5C -4A, -4C 90 72 mA Precharge quiet standby IDD2Q current -5C -4A, -4C 225 180 mA EO Operating current (ACT-PRE) Precharge power-down standby current L Idle standby current -5C -4A, -4C 270 225 mA IDD3P-F -5C -4A, -4C 360 315 mA -5C -4A, -4C 225 180 mA -5C -4A, -4C 585 540 Active power-down standby current IDD3P-S all banks open; tCK = tCK (IDD); CKE is L; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Pr IDD2N Test condition one bank; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING one bank; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); tRCD = tRCD (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks idle; tCK = tCK (IDD); CKE is L; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Active standby current IDD3N Operating current (Burst read operating) IDD4R -5C -4A, -4C 1710 1350 Operating current (Burst write operating) IDD4W -5C -4A, -4C 1710 1350 mA Auto-refresh current IDD5 -5C -4A, -4C 2250 2070 mA mA Fast PDN Exit MRS(12) = 0 Slow PDN Exit MRS(12) = 1 mA t uc od all banks open; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING all banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks open, continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING tCK = tCK (IDD); Refresh command at every tRFC (IDD) interval; CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Preliminary Data Sheet E0466E10 (Ver. 1.0) 11 EBE25EC8AAFA Parameter Symbol Self-refresh current IDD6 Operating current (Bank interleaving) IDD7 Grade -5C -4A, -4C max. Unit 54 mA 2880 2700 mA Test condition Self Refresh Mode; CK and /CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING all bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD), tRCD = 1 × tCK (IDD); CKE is H, CS is H between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4W; IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC Input Test Condition. IDD parameters are specified with ODT disabled. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 5. Definitions for IDD L is defined as VIN ≤ VIL (AC) (max.) H is defined as VIN ≥ VIH (AC) (min.) STABLE is defined as inputs stable at an H or L level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between H and L every other clock cycle (once per two clocks) for address and control signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals not including masks or strobes. 6. Refer to AC Timing for IDD Test Conditions. L EO Notes: 1. 2. 3. 4. Pr AC Timing for IDD Test Conditions For purposes of IDD testing, the following parameters are to be utilized. DDR2-400 Parameter 4-4-4 3-3-3 CL(IDD) 4 3 tRCD(IDD) 15 15 tRC(IDD) 60 60 7.5 7.5 tCK(IDD) 3.75 5 tRAS(min.)(IDD) 45 45 tRAS(max.)(IDD) 70000 tRP(IDD) tRFC(IDD) Unit 4 tCK 20 ns 65 ns 7.5 ns 5 ns 45 ns 70000 70000 ns 15 15 20 ns 75 75 75 uc tRRD(IDD) 4-4-4 od DDR2-533 ns t Preliminary Data Sheet E0466E10 (Ver. 1.0) 12 EBE25EC8AAFA DC Characteristics 2 (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol Value Input leakage current ILI TBD µA VDD ≥ VIN ≥ VSS Output leakage current ILO TBD µA VDDQ ≥ VOUT ≥ VSS VTT + 0.603 V 5 VTT – 0.603 V 5 Minimum required output pull-up under AC VOH test load Maximum required output pull-down under VOL AC test load Unit Notes 0.5 × VDDQ V 1 Output minimum sink DC current IOL +13.4 mA 3, 4, 5 Output minimum source DC current IOH -13.4 mA 2, 4, 5 EO Output timing measurement reference level VOTR Notes: 1. 2. 3. 4. 5. The VDDQ of the device under test is referenced. VDDQ = 1.7V; VOUT = 1.42V. VDDQ = 1.7V; VOUT = 0.28V. The DC value of VREF applied to the receiving device is expected to be set to VTT. After OCD calibration to 18Ω at TA = 25°C, VDD = VDDQ = 1.8V. DC Characteristics 3 (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V) Parameter L (DDR2 SDRAM Component Specification) Symbol min. max. Unit Notes AC differential input voltage VID (AC) 0.5 VDDQ + 0.6 V 1 AC differential cross point voltage VIX (AC) 0.5 × VDDQ − 0.175 0.5 × VDDQ + 0.175 V 2 AC differential cross point voltage VOX (AC) 0.5 × VDDQ − 0.125 0.5 × VDDQ + 0.125 V 3 Pr od Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as /CK, /DQS, /LDQS or /UDQS). The minimum value is equal to VIH(AC) − VIL(AC). 2. The typical value of VIX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals must cross. 3. The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential output signals must cross. VDDQ VTR Crossing point VID VIX or VOX VSSQ Differential Signal Levels*1, 2 t uc VCP Preliminary Data Sheet E0466E10 (Ver. 1.0) 13 EBE25EC8AAFA ODT DC Electrical Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Note Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω Rtt1(eff) 60 Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω Rtt2(eff) 120 75 90 Ω 1 150 180 Ω 1 Deviation of VM with respect to VDDQ/2 ∆VM −3.75 +3.75 % 1 Note: 1. Test condition for Rtt measurements. Measurement Definition for Rtt(eff) Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively. VIH(AC), and VDDQ values defined in SSTL_18. EO Rtt(eff) = VIH(AC) − VIL(AC) I(VIH(AC)) − I(VIL(AC)) Measurement Definition for ∆VM Measure voltage (VM) at test pin (midpoint) with no load. 2 × VM VDDQ L ∆VM = − 1 × 100% OCD Default Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V) Parameter Output impedance Pull-up and pull-down mismatch Output slew rate Pr (DDR2 SDRAM Component Specification) min. typ. max. Unit Notes 12.6 18 23.4 Ω 1 0 4 Ω 1, 2 1.5 4.5 V/ns 3, 4 Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V) Parameter uc od Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV. Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV. 2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and voltage. 3. Slew rate measured from VIL(AC) to VIH(AC). 4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. Pins max. Unit Input capacitance CI1 Address, /RAS, /CAS, /WE, /CS, CKE, ODT TBD pF Input capacitance CI2 CK, /CK TBD pF Data and DQS input/output capacitance CO DQ, DQS, /DQS, DM, CB TBD pF Note t Symbol Preliminary Data Sheet E0466E10 (Ver. 1.0) 14 EBE25EC8AAFA AC Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS = 0V) (DDR2 SDRAM Component Specification) Frequency (Mbps) Parameter Symbol -5C -4A, -4C 533 400 min. max. CL 4 5 Active to read or write command delay tRCD 15 Precharge command period tRP 15 Active to active/auto refresh command time tRC 60 DQ output access time from CK, /CK tAC −500 +500 EO /CAS latency min. max. Unit 3 (-4A) 4 (-4C) 15 (-4A) 20 (-4C) 15 (-4A) 20 (-4C) 60 (-4A) 65 (-4C) 5 (-4A) 5 (-4C) tCK ns ns ns +600 ps −600 Notes tDQSCK −450 +450 −500 +500 ps CK high-level width tCH 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 tCK CK half period tHP min. (tCL, tCH) min. (tCL, tCH) ps Clock cycle time tCK 3750 8000 5000 8000 ps DQ and DM input hold time tDH 225 275 ps 5 DQ and DM input setup time tDS 100 150 ps 4 tIPW 0.6 0.6 tCK tDIPW 0.35 0.35 tCK tHZ tAC max. tAC max. ps tLZ tAC min. tAC max. tAC min. tAC max. ps tDQSQ 300 350 ps tQHS 400 450 ps L DQS output access time from CK, /CK DQ hold skew factor Pr Control and Address input pulse width for each input DQ and DM input pulse width for each input Data-out high-impedance time from CK,/CK Data-out low-impedance time from CK,/CK DQS-DQ skew for DQS and associated DQ signals tHP – tQHS tHP – tQHS ps tDQSS WL − 0.25 WL + 0.25 WL − 0.25 WL + 0.25 tCK DQS input high pulse width tDQSH 0.35 0.35 tCK DQS input low pulse width tDQSL 0.35 0.35 tCK DQS falling edge to CK setup time tDSS 0.2 0.2 tCK 0.2 tCK 2 tCK tCK 0.6 tCK tCK ps 5 ps 4 1.1 tCK DQS falling edge hold time from CK tDSH 0.2 Mode register set command cycle time tMRD 2 Write preamble setup time tWPRES 0 0 Write postamble tWPST 0.4 0.6 0.4 Write preamble tWPRE 0.25 0.25 Address and control input hold time tIH 375 475 Address and control input setup time tIS 250 350 Read preamble tRPRE 0.9 1.1 0.9 Read postamble tRPST 0.4 0.6 0.4 Active to precharge command tRAS 45 70000 45 70000 Active to auto-precharge delay tRAP tRCD min. tRCD min. Preliminary Data Sheet E0466E10 (Ver. 1.0) 15 0.6 t uc od tQH Write command to first DQS latching transition DQ/DQS output hold time from DQS tCK ns ns EBE25EC8AAFA Frequency (Mbps) -5C -4A, -4C 533 400 Parameter Symbol min. max. min. max. Unit Active bank A to active bank B command period tRRD 7.5 7.5 ns Write recovery time Notes 15 15 ns tDAL (tWR/tCK)+ (tRP/tCK) (tWR/tCK)+ (tRP/tCK) tCK Internal write to read command delay tWTR 7.5 10 ns Internal read to precharge command delay tRTP 7.5 7.5 ns Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 200 tCK tXP 2 2 tCK tXARD 2 2 tCK 3 tXARDS 6 − AL 6 − AL tCK 2, 3 tCKE 3 3 tCK Output impedance test driver delay tOIT 0 12 0 12 ns Auto refresh to active/auto refresh command time tRFC 75 75 ns Average periodic refresh interval tREFI 7.8 7.8 µs Minimum time clocks remains ON after CKE asynchronously drops low tDELAY tIS + tCK + tIH EO tWR Auto precharge write recovery + precharge time Exit precharge power down to any nonread command Exit active power down to read command Exit active power down to read command (slow exit/low power mode) CKE minimum pulse width (high and low pulse width) L ns For each of the terms above, if not already an integer, round to the next higher integer. AL: Additive Latency. MRS A12 bit defines which active power down exit timing to be applied. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test. 5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test. od Pr Notes: 1. 2. 3. 4. tIS + tCK + tIH 1 CK DQS /CK /DQS tDS tDH tDS tDH tIS tIS tIH VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS uc VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS tIH Input Waveform Timing 1 (tDS, tDH) Input Waveform Timing 2 (tIS, tIH) t Preliminary Data Sheet E0466E10 (Ver. 1.0) 16 EBE25EC8AAFA ODT AC Electrical Characteristics (DDR2 SDRAM Component Specification) Unit Parameter Symbol min. max. ODT turn-on delay tAOND 2 2 tCK ODT turn-on tAON tAC(min) tAC(max) + 1000 ps ODT turn-on (power down mode) tAONPD tAC(min) + 2000 2tCK + tAC(max) + 1000 ps ODT turn-off delay tAOFD 2.5 2.5 tCK ODT turn-off tAOF tAC(min) tAC(max) + 600 ps ODT turn-off (power down mode) tAOFPD tAC(min) + 2000 2.5tCK + tAC(max) + 1000 ns ODT to power down entry latency tANPD 3 3 tCK ODT power down exit latency tAXPD 8 8 tCK Notes 1 2 EO Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND. 2. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. AC Input Test Conditions Parameter Symbol Value Unit Notes VREF 0.5 × VDDQ V 1 Input signal maximum peak to peak swing VSWING(max.) 1.0 V 1 Input signal maximum slew rate SLEW 1.0 V/ns 2, 3 L Input reference voltage Pr Notes: 1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VIL(DC) (max.) to VIH(AC) (min.) for rising edges and the range from VIH(DC) (min.) to VIL(AC) (max.) for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions. Start of rising edge input timing Start of falling edge input timing VIH (AC)(min.) VIH (DC)(min.) VREF od VSWING(max.) VDDQ VIL (DC)(max.) VIL (AC)(max.) Falling slew = VSS ∆TR ∆TF VIH (DC)(min.) − VIL (AC)(max.) ∆TF Rising slew = VIH (AC) min. − VIL (DC)(max.) Measurement point DQ VTT RT =25 Ω Preliminary Data Sheet E0466E10 (Ver. 1.0) 17 t Output Load ∆TR uc AC Input Test Signal Wave forms EBE25EC8AAFA Pin Functions CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. EO /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. L A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. [Bank Select Signal Table] Bank 0 BA0 BA1 L L H Bank 2 L Bank 3 H Remark: H: VIH. L: VIL. L od Bank 1 Pr BA0 and BA1 (input pins) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) H H DQ and CB (input and output pins) Data are input to and output from these pins. DQS and /DQS (input and output pin) DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input). Preliminary Data Sheet E0466E10 (Ver. 1.0) 18 t uc CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. EBE25EC8AAFA DM (input pins) DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and /DQS. VDD (power supply pins) 1.8V is applied. (VDD is for the internal circuit.) VDDSPD (power supply pin) 1.8V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected. EO Detailed Operation Part and Timing Waveforms Refer to the EDE2504AASE, EDE2508AASE, EDE2516AASE datasheet (E0427E). L t uc od Pr Preliminary Data Sheet E0466E10 (Ver. 1.0) 19 EBE25EC8AAFA Physical Outline Unit: mm 4.00 max 0.5 min 4.00 min (DATUM -A-) Component area (Front) 1 120 A 63.00 1.27 ± 0.10 55.00 L 240 FULL R 3.00 2.50 ± 0.20 Pr Detail A Detail B (DATUM -A-) 1.00 4.00 0.20 ± 0.15 4.00 Component area (Back) 30.00 121 17.80 133.35 10.00 EO B 2.50 FULL R od 0.80 ± 0.05 3.80 5.00 1.50 ± 0.10 uc ECA-TS2-0093-01 t Preliminary Data Sheet E0466E10 (Ver. 1.0) 20 EBE25EC8AAFA CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. MDE0202 EO NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES L Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES 3 od Pr No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. STATUS BEFORE INITIALIZATION OF MOS DEVICES uc Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 t Preliminary Data Sheet E0466E10 (Ver. 1.0) 21 EBE25EC8AAFA µBGA is a registered trademark of Tessera, Inc. All other trademarks are the intellectual property of their respective owners. The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. EO Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. L [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. Pr [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. M01E0107 t uc od If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. Preliminary Data Sheet E0466E10 (Ver. 1.0) 22