DATA SHEET 256M bits SDRAM EDS2532CASG (8M words × 32 bits) Pin Configurations • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz/100MHz (max.) • 2KB page size ⎯ Row address: A0 to A11 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVTTL • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): ⎯ Sequential (1, 2, 4, 8, full page) ⎯ Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge operation for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms ⎯ Average refresh period: 15.6μs • Operating ambient temperature range ⎯ TA = 0°C to +70°C /xxx indicates active low signal. L EO Specifications 90-ball FBGA 1 5 6 7 3 4 VSS VDD DQ2 DQ11 DQ15 VSSQ VDDQ DQ0 DQ4 DQ14 DQ12 VDDQ VSSQ DQ1 DQ3 DQ10 DQ9 VSSQ VDDQ DQ5 DQ6 VDD VDDQ VSSQ DQ7 VDD A DQ13 VSS VDD B C D E DQ8 F VSS DQM1 VDD VSS /WE DQM0 G CLK CKE A9 /CS /CAS /RAS NC A8 A7 NC A11 BA0 A6 A5 A4 BA1 A10 A0 A1 A2 DQM2 H J K Pr A3 DQM3 VDD L VSS DQ31 VDDQ VSSQ DQ16 VSS DQ29 DQ30 VSSQ VDDQ DQ17 DQ18 DQ25 DQ27 VDDQ VSSQ DQ22 DQ20 DQ28 DQ24 VSSQ VDDQ DQ23 DQ19 M N P od Features 2 R • ×32 organization • Single pulsed /RAS • Burst read/write operation and burst read/single write operation capability • Byte control by DQM DQ26 VSS VDD VSS VDD DQ21 (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection t uc A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC Document No. E0541E21 (Ver. 2.1) Date Published February 2006 (K) Japan Printed in Japan URL: http://www.elpida.com This product became EOL in March, 2007. ©Elpida Memory, Inc. 2004-2006 EDS2532CASG Ordering Information Supply voltage Part number EDS2532CASG-75-E 2.5V Organization (words × bits) Internal Banks Clock frequency MHz (max.) /CAS latency Package 8M × 32 133 100 3 2 90-ball FBGA 100 2, 3 4 EDS2532CASG-1A-E Part Number E D S 25 32 C A SG - 75 - E EO Elpida Memory Type D: Monolithic Device Environment Code E: Lead Free Product Code S: SDRAM Density / Bank 25: 256M/4-bank, 4K Rows Speed 75: 133MHz/CL3 100MHz/CL2 1A: 100MHz/CL2,CL3 Bit Organization 32: x32 Die Rev. L Voltage, Interface C: 2.5V, LVTTL Package SG: FBGA t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 2 EDS2532CASG CONTENTS Specifications ................................................................................................................................................ 1 Features ........................................................................................................................................................ 1 Pin Configurations......................................................................................................................................... 1 Ordering Information ..................................................................................................................................... 2 Part Number.................................................................................................................................................. 2 Electrical Specifications ................................................................................................................................ 4 Block Diagram............................................................................................................................................... 9 Pin Function ................................................................................................................................................ 10 Command Operation................................................................................................................................... 11 EO Simplified State Diagram ............................................................................................................................ 19 Mode Register Configuration ...................................................................................................................... 20 Power-up sequence .................................................................................................................................... 22 Operation of the SDRAM ............................................................................................................................ 23 Timing Waveforms ...................................................................................................................................... 39 Package Drawing........................................................................................................................................ 45 Recommended Soldering Conditions ......................................................................................................... 46 L t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 3 EDS2532CASG Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, execute power up sequence and initialization sequence before proper device operation is achieved (refer to the Power up sequence). Absolute Maximum Ratings Symbol Rating Unit Voltage on any pin relative to VSS VT –0.5 to +3.6 V Supply voltage relative to VSS VDD –0.5 to +3.6 V Short circuit output current IOS 50 mA Power dissipation PD 1.0 W Operating temperature TA 0 to +70 °C Tstg –55 to +125 °C EO Parameter Storage temperature Note Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = 0 to +70°C) Parameter Symbol min. max. Unit Notes VDD, VDDQ 2.3 2.7 V 1 VSS, VSSQ 0 0 V 2 L Supply voltage Input high voltage VIH 1.7 VDD + 0.3 V 3 Input low voltage VIL –0.3 0.7 V 4 The supply voltage with all VDD and VDDQ pins must be on the same level. The supply voltage with all VSS and VSSQ pins must be on the same level. VIH (max.) = VDD + 1.5V (pulse width ≤ 5ns). VIL (min.) = VSS – 1.5V (pulse width ≤ 5ns). t uc od Pr Notes: 1. 2. 3. 4. Data Sheet E0541E21 (Ver. 2.1) 4 EDS2532CASG DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) Parameter /CAS latency Symbol Operating current Standby current in power down EO Standby current in power down (input signal stable) Standby current in non power down Standby current in non power down (input signal stable) Active standby current in power down Active standby current in power down (input signal stable) Active standby current in non power down Active standby current in non power down (input signal stable) max. Unit IDD1 125 mA IDD2P 3 mA IDD2PS 2 mA IDD2N 20 mA IDD2NS 9 mA IDD3P 4 mA IDD3PS 3 mA IDD3N 50 mA IDD3NS 30 mA IDD4 Refresh current IDD5 L Burst operating current Self refresh current IDD6 Grade -75 -1A -75 -1A 155 125 265 255 3 mA Test condition Burst length = 1 tRC = tRC (min.) CKE = VIL, tCK = tCK (min.) CKE = VIL, tCK = ∞ CKE, /CS = VIH, tCK = tCK (min.) CKE = VIH, tCK = ∞, /CS = VIH CKE = VIL, tCK = tCK (min.) CKE = VIL, tCK = ∞ CKE, /CS = VIH, tCK = tCK (min.) CKE = VIH, tCK = ∞, /CS = VIH tCK = tCK (min.), BL = 4 mA tRC = tRC (min.) mA VIH ≥ VDD – 0.2V VIL ≤ 0.2V Notes 1, 2, 3 6 7 4 8 1, 2, 6 2, 7 1, 2, 4 2, 8 1, 2, 5 3 t uc od Pr Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. Input signals are VIH or VIL fixed. Data Sheet E0541E21 (Ver. 2.1) 5 EDS2532CASG DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) Parameter Symbol min. max. Unit Test condition Notes Input leakage current ILI –1 1 µA 0 ≤ VIN ≤ VDD Output leakage current ILO –1.5 1.5 µA 0 ≤ VOUT ≤ VDD, DQ = disable Output high voltage VOH 2.0 — V IOH = –1 mA Output low voltage VOL — 0.4 V IOL = 1 mA Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V) Symbol Pins min. typ. max. Unit Notes Input capacitance CI1 CLK 1.0 — 2.5 pF 1, 2, 4 CI2 Address, CKE, /CS, /RAS, /CAS, /WE, 1.0 DQM — 2.5 pF 1, 2, 4 CI/O DQ — 5.5 pF 1, 2, 3, 4 EO Parameter Data input/output capacitance Notes: 1. 2. 3. 4. 3.0 Capacitance measured with Boonton Meter or effective capacitance measuring method. Measurement condition: f = 1MHz, 1.2V bias, 200mV swing. DQM = VIH to disable DOUT. This parameter is sampled and not 100% tested. L t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 6 EDS2532CASG AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) -75 -1A Parameter Symbol min. max. min. max. Unit Notes System clock cycle time (CL = 2) tCK 10 — 10 — ns 1 (CL = 3) tCK 7.5 — 10 — ns 1 CLK high pulse width tCH 2.5 — 3 — ns 1 CLK low pulse width tCL 2.5 — 3 — ns 1 tAC — 5.4 — 6 ns 1, 2 Data-out hold time tOH 2.0 — 2.0 — ns 1, 2 CLK to Data-out low impedance tLZ 0 — 0 — ns 1, 2, 3 CLK to Data-out high impedance tHZ — 5.4 — 6 ns 1, 4 Input setup time tSI 1.5 — 2 — ns 1 Input hold time tHI 0.8 — 1 — ns 1 tRC 67.5 — 70 — ns 1 tRAS 45 120000 50 120000 ns 1 tRCD 20 — 20 — ns 1 tRP 20 — 20 — ns 1 tDPL 15 — 20 — ns 1 tDAL — ns 1 EO Access time from CLK L Ref/Active to Ref/Active command period Active to Precharge command period Active command to column command (same bank) Precharge to active command period Write recovery or data-in to precharge lead time Last data into active latency 2CLK + 20ns — 2CLK + 20ns — Active (a) to Active (b) command tRRD period 15 20 Transition time (rise and fall) tT 0.5 5.0 0.5 5 ns Refresh period (4096 refresh cycles) tREF — 64 — 64 ms Pr AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.2V. Access time is measured at 1.2V. Load condition is CL = 30pF. tLZ (min.) defines the time at which the outputs achieves the low impedance state. tHZ (max.) defines the time at which the outputs achieves the high impedance state. t uc od Notes: 1. 2. 3. 4. — Data Sheet E0541E21 (Ver. 2.1) 7 EDS2532CASG Test Conditions • Input and output timing reference levels: 1.2V • Input waveform and output load: See following figures 2.1V input 0.3V I/O 1.7V 0.7V CL tT tT Output load Relationship Between Frequency and Minimum Latency -75 -1A Frequency (MHz) 133 100 Symbol 7.5 10 Unit Notes lRCD 3 2 tCK 1 lRC 9 7 tCK 1 lRAS 6 5 tCK 1 lRP 3 2 tCK 1 lDPL 2 2 tCK 1 lRRD 2 2 tCK 1 lSREX 1 1 tCK 2 lDAL 5 4 tCK = [lDPL + lRP] lSEC 9 7 tCK = [lRC] 3 EO Parameter tCK (ns) L Active command to column command (same bank) Active command to active command (same bank) Active command to precharge command (same bank) Precharge command to active command (same bank) Write recovery or data-in to precharge command (same bank) Active command to active command (different bank) Last data in to active command (Auto precharge, same bank) Self refresh exit to command input Pr Self refresh exit time tCK 1 1 tCK –1 –1 tCK –2 –2 tCK lHZP 2 2 tCK (CL = 3) lHZP 3 3 lAPR lEP (CL = 3) lEP Column command to column command lCCD 1 Write command to data in latency lWCD 0 DQM to data in lDID 0 0 DQM to data out lDOD 2 2 CKE to CLK disable lCLE 1 1 Register set to active command lMRD 2 2 /CS to command disable lCDD 0 0 Power down exit to command input lPEC 1 1 Last data out to active command (Auto precharge, same bank) Last data out to precharge (early precharge) (CL = 2) od Precharge command to high impedance (CL = 2) tCK tCK Notes: 1. lRCD to lRRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP] Data Sheet E0541E21 (Ver. 2.1) 8 t uc 1 0 tCK tCK tCK tCK tCK tCK EDS2532CASG Block Diagram CLK CKE Clock Generator Bank 3 Bank 2 Bank 1 Mode Register Data Control Circuit Input & Output Buffer /WE DQM Column Decoder & Latch Circuit Column Address Buffer & Burst Counter Latch Circuit /CAS Bank 0 Sense Amplifier Control Logic /RAS Command Decoder EO /CS Row Address Buffer & Refresh Counter Row Decoder Address DQ L t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 9 EDS2532CASG Pin Function CLK (input pin) CLK is the master clock input. Other inputs signals are referenced to the CLK rising edge. CKE (input pins) CKE determine validity of the next CLK (clock). If CKE is high, the next CLK rising edge is valid; otherwise it is invalid. If the CLK rising edge is invalid, the internal clock is not issued and the Synchronous DRAM suspends operation. When the Synchronous DRAM is not in burst mode and CKE is negated, the device enters power down mode. During power down mode, CKE must remain low. EO /CS (input pins) /CS low starts the command input cycle. When /CS is high, commands are ignored but operations continue. /RAS, /CAS, and /WE (input pins) /RAS, /CAS and /WE have the same symbols on conventional DRAM but different functions. For details, refer to the command table. L A0 to A11 (input pins) Row Address is determined by A0 to A11 at the CLK (clock) rising edge in the active command cycle. Column Address is determined by A0 to A8 at the CLK rising edge in the read or write command cycle. A10 defines the precharge mode. When A10 is high in the precharge command cycle, all banks are precharged; when A10 is low, only the bank selected by BA0 and BA1 is precharged. When A10 is high in read or write command cycle, the precharge starts automatically after the burst access. [Bank Select Signal Table] Bank 0 Bank 1 Bank 2 Remark: H: VIH. L: VIL. BA0 BA1 L L H L L H H H od Bank 3 Pr BA0 and BA1 (input pin) BA0 and BA1 are bank select signal. (See Bank Select Signal Table) DQ0 to DQ31 (input/output pins) DQ pins have the same function as I/O pins on a conventional DRAM. t uc DQM (input pins) DQM controls I/O buffers. DQM0 controls DQ0 to 7, DQM1 controls DQ8 to DQ15, DQM2 controls DQ16 to DQ23, DQM3 controls DQ24 to DQ31. In read mode, DQM controls the output buffers like a conventional /OE pin. DQM high and DQM low turn the output buffers off and on, respectively. The DQM latency for the read is two clocks. In write mode, DQM controls the word mask. Input data is written to the memory cell if DQM is low but not if DQM is high. The DQM latency for the write is zero. VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers. Data Sheet E0541E21 (Ver. 2.1) 10 EDS2532CASG Command Operation Command Truth Table The SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. CKE Symbol n–1 n /CS /RAS /CAS /WE BA1,BA0 A10 A0 to A11 Device deselect DESL H × H × × × × × × No operation NOP H × L H H H × × × Burst stop BST H × L H H L × × × Read READ H × L H L H V L V Read with auto precharge READA H × L H L H V H V Write WRIT H × L H L L V L V Write with auto precharge WRITA H × L H L L V H V Bank activate ACT H × L L H H V V V Precharge select bank PRE H × L L H L V L × EO Function Precharge all banks PALL H × L L H L × H × Mode register set MRS H × L L L L L L V Remark: H: VIH. L: VIL. ×: VIH or VIL. V: Valid address input. L Device deselect command [DESL] When this command is set (/CS is High), the SDRAM ignore command input at the clock. However, the internal status is held. Pr No operation [NOP] This command is not an execution command. However, the internal operations continue. Burst stop command [BST] This command can stop the current burst operation. od Column address strobe and read command [READ] This command starts a read operation. In addition, the start address of burst read is determined by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation, the output buffer becomes High-Z. Read with auto-precharge [READA] This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8. t uc Column address strobe and write command [WRIT] This command starts a write operation. When the burst write mode is selected, the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). Write with auto-precharge [WRITA] This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation. Data Sheet E0541E21 (Ver. 2.1) 11 EDS2532CASG Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0, BA1 and determines the row address (A0 to A11). (See Bank Select Signal Table) Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H EO Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts the refresh operation. There are two types of refresh operation, the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section. L Mode register set [MRS] The SDRAM has a mode register that defines how it operates. The mode register is specified by the address pins (A0 to BA0 and BA1) at the mode register set cycle. For details, refer to the mode register configuration. After power on, the contents of the mode register are undefined, execute the mode register set command to set up the mode register. t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 12 EDS2532CASG DQM Truth Table CKE DQM 0 1 2 3 Function Symbol n–1 n Data write / output enable ENB H × L L L L Data mask / output disable MASK H × H H H H DQ0 to DQ7 write enable/output enable ENB0 H × L × × × DQ8 to DQ15 write enable/output enable ENB1 H × × L × × DQ16 to DQ23 write enable/output enable ENB2 H × × × L × DQ24 to DQ31 write enable/output enable ENB3 H × × × × L MASK0 H × H × × × DQ8 to DQ15 write inhibit/output disable MASK 1 H × × H × × DQ16 to DQ23 write inhibit/output disable MASK 2 H × × × H × DQ24 to DQ31 write inhibit/output disable MASK 3 H × × × × H EO DQ0 to DQ7 write inhibit/output disable Remark: H: VIH. L: VIL. ×: VIH or VIL Write: lDID is needed. Read: lDOD is needed. CKE Truth Table Activating Any Clock suspend Function L Current state CKE Symbol Clock suspend mode entry n–1 n /CS /RAS /CAS /WE Address H L × × × × × Clock suspend mode L L × × × × × Clock suspend mode exit L H × × × × × REF H H L L L H × Self refresh entry SELF H L L L L H × Self refresh Self refresh exit L H L H H H × L H H × × × × H L L H H H × H L H × × × × Idle Power down Pr CBR (auto) refresh command Idle Idle Power down entry Power down exit H H × × × × L H L H H H × t uc od Remark: H: VIH. L: VIL. ×: VIH or VIL L Data Sheet E0541E21 (Ver. 2.1) 13 EDS2532CASG Function Truth Table The following table shows the operations that are performed when each command is issued in each mode of the SDRAM. The following table assumes that CKE is high. Current state /CS Precharge H × L H L H L /WE Address Command Operation × × × DESL Enter IDLE after tRP H H × NOP Enter IDLE after tRP H L × BST ILLEGAL H L H BA, CA, A10 READ/READA ILLEGAL*3 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*3 L L H H BA, RA ACT ILLEGAL*3 L L H L BA, A10 PRE, PALL NOP*5 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL EO Idle /RAS /CAS H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*4 L H H BA, RA ACT Bank and row active L L H L BA, A10 PRE, PALL NOP L L L H × REF, SELF Refresh L L L L MODE MRS Mode register set*8 H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA Begin read*6 L H L L BA, CA, A10 WRIT/WRITA Begin write*6 L L H H BA, RA ACT Other bank active ILLEGAL on same bank*2 L L H L BA, A10 PRE, PALL Precharge*7 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL od Read L Pr Row active L × × × × DESL Continue burst to end L H H H × NOP Continue burst to end L H H L × BST Burst stop L H L H BA, CA, A10 READ/READA Continue burst read to /CAS latency and New read L H L L BA, CA, A10 WRIT/WRITA Term burst read/start write Other bank active ILLEGAL on same bank*2 t uc H L L H H BA, RA ACT L L H L BA, A10 PRE, PALL Term burst read and Precharge L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL Data Sheet E0541E21 (Ver. 2.1) 14 EDS2532CASG Current state /CS /RAS /CAS /WE Address Command Read with autoprecharge H × × × × DESL L H H H × NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL*3 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*3 L L H H BA, RA ACT Other bank active ILLEGAL on same bank*2 L L H L BA, A10 PRE, PALL ILLEGAL*3 L L L H × REF, SELF ILLEGAL EO Write L L L L MODE MRS ILLEGAL × × × × DESL Continue burst to end L H H H × NOP Continue burst to end L H H L × BST Burst stop L H L H BA, CA, A10 READ/READA Term burst and New read L H L L BA, CA, A10 WRIT/WRITA Term burst and New write L H H BA, RA ACT Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL Term burst write and Precharge*1 L L L H × REF, SELF ILLEGAL L L L L MODE MRS L H × L H L H L H L H L L L × × × DESL ILLEGAL Continue burst to end and precharge Continue burst to end and precharge H H × NOP H L × BST ILLEGAL L H BA, CA, A10 READ/READA ILLEGAL*3 L L BA, CA, A10 WRIT/WRITA ILLEGAL*3 H H BA, RA ACT Other bank active ILLEGAL on same bank*3 L H L BA, A10 PRE, PALL ILLEGAL*3 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL Enter IDLE after tRC L H H H × NOP Enter IDLE after tRC L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*4 L L H H BA, RA ACT ILLEGAL*4 L L H L BA, A10 PRE, PALL ILLEGAL*4 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL Data Sheet E0541E21 (Ver. 2.1) 15 t uc od Pr Refresh (auto-refresh) Continue burst to end and precharge Continue burst to end and precharge H L Write with autoprecharge Operation EDS2532CASG Current state /CS /RAS /CAS /WE Address Command Operation Mode register set H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*4 L L H H BA, RA ACT Bank and row active*9 L L H L BA, A10 PRE, PALL NOP L L L H × REF, SELF Refresh*9 L L L L MODE MRS Mode register set*8 H: VIH. L: VIL. ×: VIH or VIL An interval of tDPL is required between the final valid data input and the precharge command. If tRRD is not satisfied, this operation is illegal. Illegal for same bank, except for another bank. Illegal for all banks. NOP for same bank, except for another bank. Illegal if tRCD is not satisfied. Illegal if tRAS is not satisfied. MRS command must be issued after DOUT finished, in case of DOUT remaining. Illegal if lMRD is not satisfied. L EO Remark: Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 16 EDS2532CASG Command Truth Table for CKE CKE Current State n–1 n Self refresh H Self refresh recovery /CS /RAS /CAS /WE Address Operation × × × × × × INVALID, CLK (n – 1) would exit self refresh L H H × × × × Self refresh recovery L H L H H × × Self refresh recovery L H L H L × × ILLEGAL L H L L × × × ILLEGAL L L × × × × × Continue self refresh H H H × × × × Idle after tRC H H L H H × × Idle after tRC H H L H L × × ILLEGAL H H L L × × × ILLEGAL EO Power down H L H × × × × ILLEGAL H L L H H × × ILLEGAL H L L H L × × ILLEGAL H L L L × × × ILLEGAL H × × × × × L H H × × × × EXIT power down L H L H H H × EXIT power down L L × × × × × Continue power down mode L All banks idle Notes INVALID, CLK (n – 1) would exit power down H H H × × × Refer to operations in Function Truth Table H H L H × × Refer to operations in Function Truth Table H H L L H × H H L L L H × H H L L L L OPCODE Refer to operations in Function Truth Table H L H × × × Begin power down next cycle H L L H × × Refer to operations in Function Truth Table H L L L H × Refer to operations in Function Truth Table Pr Refer to operations in Function Truth Table CBR (auto) Refresh od × H L L L L H H L L L L L Self refresh L H × × × × L L × × × × Row active H × × × × × L × × × × × Any state other than H H × × × × listed above H L × × × × × Begin clock suspend next cycle L H × × × × × Exit clock suspend next cycle L L × × × × × Maintain clock suspend 1 OPCODE Refer to operations in Function Truth Table × Exit power down next cycle × Power down × Refer to operations in Function Truth Table × Clock suspend 1 1 t uc Refer to operations in Function Truth Table 2 Remark: H: VIH. L: VIL. ×: VIH or VIL Notes: 1. Self refresh can be entered only from the all banks idle state. Power down can be entered only from all banks idle. Clock suspend can be entered only from following states, row active, read, read with autoprecharge, write and write with auto precharge. 2. Must be legal command as defined in Function Truth Table. Data Sheet E0541E21 (Ver. 2.1) 17 EDS2532CASG Clock suspend mode entry The SDRAM enters clock suspend mode from active mode by setting CKE to Low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock suspend mode changes depending on the current status (1 clock before) as shown below. ACTIVE clock suspend This suspend mode ignores inputs after the next clock by internally maintaining the bank active status. READ suspend and READ with Auto-precharge suspend The data being output is held (and continues to be output). WRITE suspend and WRIT with Auto-precharge suspend In this mode, external signals are not accepted. However, the internal state is held. EO Clock suspend During clock suspend mode, keep the CKE to Low. Clock suspend mode exit The SDRAM exits from clock suspend mode by setting CKE to High during the clock suspend state. L IDLE In this state, all banks are not selected, and completed precharge operation. Pr Auto-refresh command [REF] When this command is input from the IDLE state, the SDRAM starts auto-refresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.) During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 4096 times are required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh, no precharge command is required after auto-refresh. od Self-refresh entry [SELF] When this command is input during the IDLE state, the SDRAM starts self-refresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since self-refresh is performed internally and automatically, external refresh operations are unnecessary. Power down mode entry When this command is executed during the IDLE state, the SDRAM enters power down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit. t uc Self-refresh exit When this command is executed during self-refresh mode, the SDRAM can exit from self-refresh mode. After exiting from self-refresh mode, the SDRAM enters the IDLE state. Power down exit When this command is executed at the power down mode, the SDRAM can exit from power down mode. After exiting from power down mode, the SDRAM enters the IDLE state. Data Sheet E0541E21 (Ver. 2.1) 18 EDS2532CASG Simplified State Diagram SELF REFRESH SR ENTRY SR EXIT MRS MODE REGISTER SET REFRESH IDLE *1 AUTO REFRESH CKE CKE_ EO IDLE POWER DOWN ACTIVE ACTIVE CLOCK SUSPEND CKE_ CKE ROW ACTIVE BST BST WRITE L Write WRITE SUSPEND CKE_ WRITE READ WRITE WITH AP READ WRITE CKE READ WITH AP WRITE WITH AP WRITE WITH AP Read CKE_ READ CKE Pr WRITEA CKE PRECHARGE POWER ON READ SUSPEND READ WITH AP PRECHARGE CKE_ WRITEA SUSPEND POWER APPLIED READ WITH AP CKE_ READA CKE READA SUSPEND PRECHARGE PRECHARGE PRECHARGE od Automatic transition after completion of command. Transition resulting from command input. Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state. t uc Data Sheet E0541E21 (Ver. 2.1) 19 EDS2532CASG Mode Register Configuration The mode register is set by the input to the address pins (A0 to A11, BA0 and BA1) during mode register set cycles. The mode register consists of five sections, each of which is assigned to address pins. BA1, BA0, A8, A9, A10, A11: (OPCODE): The SDRAM has two types of write modes. One is the burst write mode, and the other is the single write mode. These bits specify write mode. Burst read and burst write: Burst write is performed for the specified burst length starting from the column address specified in the write cycle. Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of the burst length. EO A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set. A6, A5, A4: (LMODE): These pins specify the /CAS latency. A3: (BT): A burst type is specified. A2, A1, A0: (BL): These pins specify the burst length. A11 A10 A9 A8 L BA1 BA0 OPCODE A6 A6 0 A5 A4 LMODE A3 0 0 R 0 Sequential 0 0 1 R 1 Interleave 0 1 0 0 1 1 1 X X R 0 X X 0 0 R 1 0 X X 0 0 R 1 1 X X X X X X 0 0 0 1 R R X X X X 1 0 X X X X 1 1 BT=1 0 0 0 2 0 0 1 2 2 3 0 1 0 4 4 0 1 1 8 8 1 0 0 R R Burst read and burst write Burst read and single write R Burst length BT=0 1 0 1 R R 1 1 0 R R 1 1 1 F.P. R F.P.: Full Page R is Reserved (inhibit) X: 0 or 1 Mode Register Set Timing Data Sheet E0541E21 (Ver. 2.1) 20 1 t uc 0 1 A2 A1 A0 1 Write mode 0 A0 BL od A8 A1 A3 Burst type A5 A4 CAS latency 0 A9 A2 BT Pr BA1 BA0 A11 A10 0 0 0 0 A7 EDS2532CASG Burst length = 2 Burst length = 4 Starting Ad. Addressing(decimal) A0 Starting Ad. Addressing(decimal) Sequential Interleave A1 A0 0 0, 1, 0, 1, 0 0 0, 1, 2, 3, 0, 1, 2, 3, 1 1, 0, 1, 0, 0 1 1, 2, 3, 0, 1, 0, 3, 2, 1 0 2, 3, 0, 1, 2, 3, 0, 1, 1 1 3, 0, 1, 2, 3, 2, 1, 0, Sequential Interleave Burst length = 8 Addressing(decimal) Starting Ad. A2 A1 A0 Sequential Interleave 0 0 0 0, 1, 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 0 0 1 1, 2, 3, 4, 5, 6, 7, 0, 1, 0, 3, 2, 5, 4, 7, 6, EO 0 1 0 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 0, 1, 6, 7, 4, 5, 0 1 1 3, 4, 5, 6, 7, 0, 1, 2, 3, 2, 1, 0, 7, 6, 5, 4, 1 0 0 4, 5, 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 1 0 1 5, 6, 7, 0, 1, 2, 3, 4, 5, 4, 7, 6, 1, 0, 3, 2, 1 1 0 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 4, 5, 2, 3, 0, 1, 1 1 1 7, 0, 1, 2, 3, 4, 5, 6, 7, 6, 5, 4, 3, 2, 1, 0, Burst Sequence L Full page burst is available only for sequential addressing. The addressing sequence is started from the column address that is asserted by read/write command. And the address is increased one by one. It is back to the address 0 when the address reaches at the end of address 511. “Full page burst” stops the burst read/write with burst stop command. t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 21 EDS2532CASG Power-up sequence Power-up sequence The SDRAM should be goes on the following sequence with power up. The CLK, CKE, /CS, DQM and DQ pins keep low till power stabilizes. The CLK pin is stabilized within 100 µs after power stabilizes before the following initialization sequence. The CKE and DQM is driven to high between power stabilizes and the initialization sequence. This SDRAM has VDD clamp diodes for CLK, CKE, /CS DQM and DQ pins. If these pins go high before power up, the large current flows from these pins to VDD through the diodes. Initialization sequence EO When 200 µs or more has past after the above power-up sequence, all banks must be precharged using the precharge command (PALL). After tRP delay, set 8 or more auto refresh commands (REF). Set the mode register set command (MRS) to initialize the mode register. We recommend that by keeping DQM and CKE to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus contention on memory system formed with a number of device. VDD, VDDQ Initialization sequence Power up sequence 100 μs 200 μs 0V L CKE, DQM Low CLK Low /CS, DQ Low Pr Power stabilize Power-up sequence and Initialization sequence t uc od Data Sheet E0541E21 (Ver. 2.1) 22 EDS2532CASG Operation of the SDRAM Read/Write Operations Bank active Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACT) command. An interval of tRCD is required between the bank active command input and the following read/write command input. EO Read operation A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and the bank select address at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output. The /CAS latency and burst length must be specified at the mode register. CLK Command DQ READ ACT L Address tRCD Row Column out 0 CL = 2 CL = 3 out 1 out 2 out 3 out 0 out 1 out 2 out 3 Pr CL = /CAS latency Burst Length = 4 /CAS Latency CLK tRCD ACT READ Address Row Column BL = 1 out 0 out 0 out 1 DQ BL = 2 od Command out 0 out 1 out 2 out 3 BL = 4 out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7 t uc BL = 8 BL : Burst Length /CAS Latency = 2 Burst Length Data Sheet E0541E21 (Ver. 2.1) 23 EDS2532CASG Write operation Burst write or single write mode is selected by the OPCODE of the mode register. 1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read operations. The write start address is specified by the column address and the bank select address at the write command set cycle. CLK tRCD Command ACT WRIT Address Row Column in 0 EO BL = 1 DQ in 0 in 1 in 0 in 1 in 2 in 3 in 0 in 1 in 2 in 3 BL = 2 BL = 4 in 4 in 5 in 6 in 7 BL = 8 CL = 2, 3 Burst write L 2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is only written to the column address and the bank select address specified by the write command set cycle without regard to the burst length setting. (The latency of data input is 0 clock). CLK Command DQ WRIT Pr Address ACT tRCD Row Column in 0 Single write t uc od Data Sheet E0541E21 (Ver. 2.1) 24 EDS2532CASG Auto Precharge Read with auto-precharge In this operation, since precharge is automatically performed after completing a read operation, a precharge command need not be executed after each read operation. The command executed for the same bank after the execution of this command must be the bank active (ACT) command. In addition, an interval defined by lAPR is required before execution of the next command. [Clock cycle time] /CAS latency Precharge start cycle 3 2 cycle before the final data is output 2 1 cycle before the final data is output CLK EO CL=2 Command ACT READA ACT lRAS DQ CL=3 Command out0 out1 out2 out3 lAPR ACT READA ACT lRAS DQ out0 out1 L Note: Internal auto-precharge starts at the timing indicated by " ". And an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge " out2 out3 lAPR ". Burst Read (BL = 4) CLK ACT ACT WRITA od Command Pr Write with auto-precharge In this operation, since precharge is automatically performed after completing a burst write or single write operation, a precharge command need not be executed after each write operation. The command executed for the same bank after the execution of this command must be the bank active (ACT) command. In addition, an interval of lDAL is required between the final valid data input and input of next command. lRAS DQ in0 in1 in2 in3 lDAL Burst Write (BL = 4) Data Sheet E0541E21 (Ver. 2.1) 25 t uc Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge " ". EDS2532CASG CLK Command ACT ACT WRITA lRAS DQ in lDAL EO Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge " ". Single Write L t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 26 EDS2532CASG Burst Stop Command During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus goes to High-Z after the /CAS latency from the burst stop command. CLK READ Command BST DQ (CL = 2) out EO DQ (CL = 3) out out out out High-Z out High-Z Burst Stop at Read During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes to High-Z at the same clock with the burst stop command. CLK Command L DQ WRITE in BST High-Z in in in Burst Stop at Write t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 27 EDS2532CASG Command Intervals Read command to Read command interval 1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. CLK Command ACT Address Row READ READ Column A Column B BS EO DQ Bank0 Active out A0 out B0 out B1 out B2 out B3 CL = 3 BL = 4 Bank 0 Column =A Column =B Column =A Column =B Dout Read Read Dout READ to READ Command Interval (same ROW address in same bank) L 2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. CLK Command Address ACT ACT READ READ Row 0 Row 1 Column A Column B DQ Pr BS out A0 out B0 out B1 out B2 out B3 Bank0 Active Bank3 Bank0 Bank3 Active Read Read CL = 3 BL = 4 Bank0 Bank3 Dout Dout READ to READ Command Interval (different bank) t uc od Data Sheet E0541E21 (Ver. 2.1) 28 EDS2532CASG Write command to Write command interval 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority. CLK Command ACT Address Row WRIT WRIT Column A Column B BS DQ in A0 EO Bank0 Active in B0 in B1 in B2 in B3 Burst Write Mode BL = 4 Bank 0 Column =A Column =B Write Write WRITE to WRITE Command Interval (same ROW address in same bank) L 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. In the case of burst write, the second write command has priority. CLK Command ACT WRIT Row 0 Row 1 Column A Column B BS DQ in A0 Bank0 Active WRIT Pr Address ACT in B0 in B1 in B2 in B3 Burst Write Mode BL = 4 Bank3 Bank0 Bank3 Active Write Write t uc od WRITE to WRITE Command Interval (different bank) Data Sheet E0541E21 (Ver. 2.1) 29 EDS2532CASG Read command to Write command interval 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be set High so that the output buffer becomes High-Z before data input. CLK Command READ WRIT CL=2 DQM CL=3 in B0 DQ (input) in B1 in B2 in B3 EO BL = 4 Burst write High-Z DQ (output) READ to WRITE Command Interval (1) CLK Command READ WRIT DQM L CL=2 2 clock out out out in in in in out out in in in in DQ CL=3 Pr READ to WRITE Command Interval (2) 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before data input. t uc od Data Sheet E0541E21 (Ver. 2.1) 30 EDS2532CASG Write command to Read command interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. CLK Command WRIT READ DQM DQ (input) in A0 EO DQ (output) out B0 Column = A Write Column = B Read out B1 out B2 out B3 Burst Write Mode CL = 2 BL = 4 Bank 0 /CAS Latency Column = B Dout WRITE to READ Command Interval (1) CLK DQM DQ (input) WRIT L Command in A1 out B0 Pr DQ (output) in A0 READ Column = A Write out B1 out B2 /CAS Latency Column = B Read Column = B Dout out B3 Burst Write Mode CL = 2 BL = 4 Bank 0 WRITE to READ Command Interval (2) t uc od 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address). Data Sheet E0541E21 (Ver. 2.1) 31 EDS2532CASG Read with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second command. CLK Command READA READ bank0 Read A bank3 Read BS DQ out A0 out A1 out B1 CL= 3 BL = 4 ". EO Note: Internal auto-precharge starts at the timing indicated by " out B0 Read with Auto Precharge to Read Command Interval (Different bank) 2. Same bank: The consecutive read command (the same bank) is illegal. Write with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of one bank starts 2 clocks later from the second command. L WRIT DQ in B0 CLK Command WRITA BS in A0 in A1 in B2 in B3 bank3 Write Pr bank0 Write A in B1 Note: Internal auto-precharge starts at the timing indicated by " BL= 4 ". Write with Auto Precharge to Write Command Interval (Different bank) 2. Same bank: The consecutive write command (the same bank) is illegal. t uc od Data Sheet E0541E21 (Ver. 2.1) 32 EDS2532CASG Read with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, DQM must be set High so that the output buffer becomes High-Z before data input. The internal autoprecharge of one bank starts at the next clock of the second command. CLK Command READA WRIT BS CL = 2 DQM CL = 3 DQ (input) EO in B0 DQ (output) in B1 in B2 in B3 High-Z bank0 ReadA BL = 4 bank3 Write Note: Internal auto-precharge starts at the timing indicated by " ". Read with Auto Precharge to Write Command Interval (Different bank) L 2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Write with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. However, in case of a burst write, data will continue to be written until one clock before the read command is executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command. Pr CLK Command WRITA BS DQM in A0 DQ (output) od DQ (input) READ out B0 bank0 WriteA bank3 Read out B1 out B2 out B3 Note: Internal auto-precharge starts at the timing indicated by " CL = 3 BL = 4 ". t uc Write with Auto Precharge to Read Command Interval (Different bank) 2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Data Sheet E0541E21 (Ver. 2.1) 33 EDS2532CASG Read command to Precharge command interval (same bank) When the precharge command is executed for the same bank as the read command that preceded it, the minimum interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the clocks defined by lHZP, there is a case of interruption to burst read data output will be interrupted, if the precharge command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as an interval from the final data output to precharge command execution. CLK PRE/PALL READ Command DQ out A0 out A1 CL=2 out A2 out A3 EO lEP = -1 cycle READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4) CLK Command PRE/PALL READ DQ out A0 out A1 L CL=3 out A2 out A3 lEP = -2 cycle READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4) CLK READ Pr Command PRE/PALL High-Z DQ out A0 lHZP = 2 READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 1, 2, 4, 8) Command READ PRE/PALL od CLK High-Z DQ out A0 t uc lHZP =3 READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 1, 2, 4, 8) Data Sheet E0541E21 (Ver. 2.1) 34 EDS2532CASG Write command to Precharge command interval (same bank) When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL. CLK PRE/PALL WRIT Command DQM DQ in A0 in A1 in A2 EO tDPL WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation)) CLK Command PRE/PALL WRIT DQM L DQ in A0 in A1 in A2 in A3 tDPL WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data)) t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 35 EDS2532CASG Bank active command interval 1. Same bank: The interval between the two bank active commands must be no less than tRC. 2. In the case of different bank active commands: The interval between the two bank active commands must be no less than tRRD. CLK Command ACT ACT Address ROW ROW BS EO tRC Bank 0 Active Bank 0 Active Bank Active to Bank Active for Same Bank CLK Command ACT ROW:0 ROW:1 L Address ACT BS tRRD Bank 3 Active Pr Bank 0 Active Bank Active to Bank Active for Different Bank Mode register set to Bank active command interval The interval between setting the mode register and executing a bank active command must be no less than lMRD. CLK Address MRS OPCODE od Command ACT BS & ROW lMRD Mode Register Set Bank Active t uc Mode register set to Bank active command interval Data Sheet E0541E21 (Ver. 2.1) 36 EDS2532CASG DQM Control The DQM mask the DQ data. The UDQM and LDQM mask the upper and lower bytes of the DQ data, respectively. The timing of UDQM/LDQM is different during reading and writing. Reading When data is read, the output buffer can be controlled by DQM. By setting DQM to Low, the output buffer becomes Low-Z, enabling data output. By setting DQM to High, the output buffer becomes High-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of DQM during reading is 2 clocks. Writing Input data can be masked by DQM. By setting DQM to Low, data can be written. In addition, when DQM is set to High, the corresponding data is not written, and the previous data is held. The latency of DQM during writing is 0 clock. EO CLK DQM High-Z DQ out 0 out 1 out 3 lDOD = 2 Latency L Reading CLK DQ Pr DQM in 0 in 3 in 1 od lDID = 0 Latency Writing t uc Data Sheet E0541E21 (Ver. 2.1) 37 EDS2532CASG Refresh Auto-refresh All the banks must be precharged before executing an auto-refresh command. Since the auto-refresh command updates the internal counter every time it is executed and determines the banks and the ROW addresses to be refreshed, external address specification is not required. The refresh cycles are required to refresh all the ROW addresses within tREF (max.). The output buffer becomes High-Z after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the auto-refresh, an additional precharge operation by the precharge command is not required. EO Self-refresh After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During selfrefresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF (max.) period on the condition 1 and 2 below. 1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. 2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting from self-refresh mode. Note: tREF (max.) / refresh cycles. Others L Power-down mode The SDRAM enters power-down mode when CKE goes Low in the IDLE state. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held Low. In addition, by setting CKE to High, the SDRAM exits from the power down mode, and command input is enabled from the next clock. In this mode, internal refresh is not performed. t uc od Pr Clock suspend mode By driving CKE to Low during a bank active or read/write operation, the SDRAM enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal state is maintained. When CKE is driven High, the SDRAM terminates clock suspend mode, and command input is enabled from the next clock. For details, refer to the "CKE Truth Table". Data Sheet E0541E21 (Ver. 2.1) 38 EDS2532CASG Timing Waveforms Read Cycle tCK tCH t CL CLK t RC VIH CKE t RP tRAS tRCD tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI /CS tSI tHI tSI tHI /RAS EO tSI tHI tSI tHI /CAS tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI /WE tSI tHI BS tSI tHI tSI tHI A10 tSI tHI L Address tSI tHI tSI tHI tSI DQM tHI DQ (input) Pr tAC DQ (output) tAC tAC tHZ t AC tOH tOH Bank 0 Active Bank 0 Read tLZ tOH tOH /CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL = VOH or VOL Bank 0 Precharge t uc od Data Sheet E0541E21 (Ver. 2.1) 39 EDS2532CASG Write Cycle tCK tCH tCL CLK tRC VIH CKE tRP tRAS tRCD tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI /CS tSI tHI tSI tHI /RAS tSI tHI tSI tHI /CAS EO tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI /WE tSI tHI tSI tHI BS tSI tHI tSI tHI A10 tSI tHI tSI tHI tSI tHI Address tSI L DQM tSI DQ (input) tHI t HI tSI tHI tSI tHI tSI tHI tDPL Bank 0 Write Bank 0 Active Mode Register Set Cycle 0 1 CKE 2 3 4 5 VIL /CS /RAS /CAS /WE 7 8 9 10 11 12 CL = 2 BL = 4 Bank 0 access = VIH or VIL 13 14 15 16 17 18 19 code valid C: b’ C: b R: b DQM DQ (output) b High-Z DQ (input) lMRD lRP Precharge If needed Mode register Set Bank 3 Active lRCD Output mask Bank 3 Read Data Sheet E0541E21 (Ver. 2.1) 40 t uc BS Address 6 Bank 0 Precharge od CLK Pr DQ (output) b+3 b’ b’+1 b’+2 b’+3 lRCD = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL EDS2532CASG Read Cycle/Write Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK VIH CKE Read cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL /CS /RAS /CAS /WE BS Address R:a C:a R:b C:b C:b' C:b" DQM DQ (output) a a+1 a+2 a+3 b b+1 b+2 b+3 b' b'+1 b" b"+1 b"+2 b"+3 High-Z DQ (input) Bank 0 Active Bank 0 Read Bank 3 Active Bank 3 Bank 0 Read Precharge Bank 3 Read Bank 3 Read Bank 3 Precharge VIH Write cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL EO CKE /CS /RAS /CAS /WE BS Address R:a C:a R:b C:b C:b' C:b" DQM High-Z DQ (output) DQ (input) a a+1 a+2 a+3 Bank 0 Write b Bank 3 Active L Bank 0 Active b+1 b+2 b+3 b' Bank 3 Write Bank 0 Precharge b'+1 b" Bank 3 Write b"+1 b"+2 b"+3 Bank 3 Write Bank 3 Precharge Read/Single Write Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK CKE VIH /RAS /CAS /WE BS R:a Address DQM Pr /CS C:a R:b C:a' C:a a Bank 0 Active CKE od a DQ (input) DQ (output) Bank 3 Active C:a R:b a Bank 0 Bank 0 Write Read VIH /CS /RAS /CAS /WE BS Address R:a C:a DQM a DQ (input) DQ (output) a Bank 0 Active Bank 0 Read a+1 a+3 Bank 0 Write Bank 3 Active a+1 a+2 a+3 Bank 0 Precharge Bank 3 Precharge t uc Bank 0 Read a+1 a+2 a+3 C:b C:c b c Bank 0 Bank 0 Write Write Bank 0 Precharge Read/Single write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL Data Sheet E0541E21 (Ver. 2.1) 41 EDS2532CASG Read/Burst Write Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK CKE /CS /RAS /CAS /WE BS R:a Address C:a R:b C:a' DQM a DQ (input) DQ (output) EO a Bank 0 Active CKE Clock suspend Bank 0 Read Bank 3 Active C:a R:b a+1 a+2 a+3 a+1 a+2 a+3 Bank 0 Precharge Bank 0 Write Bank 3 Precharge VIH /CS /RAS /CAS /WE BS DQM DQ (input) DQ (output) R:a L Address Bank 0 Active Bank 0 Read 0 1 2 CLK a+1 a+2 a+3 a+3 Bank 0 Write Bank 3 Active 3 4 5 6 7 VIH /CS /RAS /CAS /WE BS 8 9 10 11 12 Read/Burst write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL 13 14 15 R:a A10=1 DQM DQ (input) 16 17 t RP t RC Auto Refresh t RC Auto Refresh Data Sheet E0541E21 (Ver. 2.1) 42 18 19 20 C:a a High-Z DQ (output) Precharge If needed Bank 0 Precharge t uc Address a+1 od CKE a a Pr Auto Refresh Cycle C:a Active Bank 0 Read Bank 0 a+1 Refresh cycle and Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL EDS2532CASG Self Refresh Cycle CLK lSREX CKE Low CKE /CS /RAS /CAS /WE BS Address A10=1 DQM EO DQ (input) High-Z DQ (output) t RP Precharge command If needed t RC t RC Self refresh entry command Next clock enable Self refresh exit ignore command or No operation Auto Next clock refresh enable Self refresh entry command Self refresh cycle /RAS-/CAS delay = 3 CL = 3 BL = 4 = VIH or VIL Clock Suspend Mode L 0 CLK CKE /CS tSI 1 2 3 4 5 tSI tHI 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL /RAS /WE BS Address R:a Pr /CAS C:a DQM DQ (output) R:b a C:b a+1 a+2 a+3 b b+1 b+2 b+3 High-Z DQ (input) Active clock Bank0 suspend end Read Bank3 Active /CS /RAS /CAS /WE BS C:a R:b R:a Read suspend start Read suspend end Bank3 Read Bank0 Precharge Earliest Bank3 Precharge od Bank0 Active clock Active suspend start CKE Address 20 Write cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL C:b DQM High-Z DQ (input) a Bank0 Active Active clock suspend start a+1 a+2 Active clock Bank0 Bank3 supend end Write Active Write suspend start a+3 b Write suspend end Data Sheet E0541E21 (Ver. 2.1) 43 t uc DQ (output) b+1 b+2 b+3 Bank3 Bank0 Write Precharge Earliest Bank3 Precharge EDS2532CASG Power Down Mode CLK CKE Low CKE /CS /RAS /CAS /WE BS Address R: a A10=1 EO DQM DQ (input) High-Z DQ (output) tRP Precharge command If needed Power down cycle Power down entry Power down /RAS-/CAS delay = 3 mode exit Active Bank 0 /CAS latency = 3 Burst length = 4 = VIH or VIL Initialization Sequence L 0 CLK CKE 1 2 3 4 5 6 7 8 9 10 48 49 50 51 52 53 54 55 VIH /CS /RAS /WE valid Address DQM VIH DQ t RC tRP All banks Precharge Auto Refresh code tRC Auto Refresh Valid High-Z od Pr /CAS lMRD Mode register Set Bank active If needed t uc Data Sheet E0541E21 (Ver. 2.1) 44 EDS2532CASG Package Drawing 90-ball FBGA Solder ball: Lead free (Sn-Ag-Cu) Unit: mm 0.1 S A 7.24 ± 0.05 0.1 S B L EO 11.30 ± 0.05 INDEX MARK 0.1 S 0.78 ± 0.10 S Pr 0.25 ± 0.05 0.1 S B 3.9 od 9.1 A 0.65 INDEX MARK t uc 0.65 0.65 90-φ0.35 ± 0.05 φ0.08 M S A B ECA-TS2-0130-01 Data Sheet E0541E21 (Ver. 2.1) 45 EDS2532CASG Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the EDS2532CASG. Type of Surface Mount Device EDS2532CASG: 90-ball FBGA < Lead free (Sn-Ag-Cu) > L EO t uc od Pr Data Sheet E0541E21 (Ver. 2.1) 46 EDS2532CASG NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. EO 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. L 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Pr Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 t uc od Data Sheet E0541E21 (Ver. 2.1) 47 EDS2532CASG The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. EO [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. L [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. Pr If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 t uc od Data Sheet E0541E21 (Ver. 2.1) 48