LED - Lamp ELD-940-525-1 15.11.2007 rev. 03 Radiation Type Technology Case Infrared DH AlGaAs/GaAs 5 mm plastic lens Description High-power NIR-LED, housing without standoff leads 8,6 5,75 1 - 0,3 2,54 0,8 - 0,4 Anode 1,5 0,6 36,5 ± 1,0 Note: Special packages with standoff available on request Applications - 0,2 Remote control, safety equipment, automation Ø5 Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit IF 100 mA IFM 200 mA PD 280 mW Operating temperature range Tamb -20 to +100 °C Storage temperature range Tstg -55 to +100 °C Junction temperature TJ 100 °C Typ Max Unit 1,4 1,6 V Forward current (DC) (tP ≤ 50 µs, tP /T = 1/2) Peak forward current Power dissipation Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 100 mA Forward voltage Symbol Min VF IR = 10 µA VR 5 Radiant power IF = 100 mA Φe 25 35 mW Radiant intensity IF = 100 mA Ιe 50 70 mW/sr Peak wavelength IF = 100 mA λP 925 940 Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 50 nm Viewing angle IF = 100 mA ϕ 20 deg. 600 ns Reverse voltage IF = 100 mA tr, tf Switching time Note: All measurements carried out onEPIGAP equipment V 955 nm We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545