Photodiode EPD-1300-5-0.2 Preliminary 6/21/2007 rev. 06/07 Wavelength Type Technology Case Infrared Planar InGaAs/InP 5 mm plastic lens Description InGaAs-Photodiode mounted in standard 5 mm package without standoff . High spectral sensitivity in the infrared range (NIR, SWIR). 9,15 5,75 - 0,3 1 2,54 0,8 - 0,4 Anode Note: Special packages with standoff available on request Applications 1,5 0,6 - 0,2 36,5 ± 1,0 Ø5 Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.032 mm² Temperature coefficient TC(ID) 7.4 %/K Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IF = 10 mA VF IR = 10 µA VR 5 Sensitivity range at 10 % VR = 0 V λ 800 Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm1) VR = 0 V Sλ 0.9 A/W Dark current VR = 5 V ID 30 Shunt resistance VR = 10 mV RSH Noise equivalent power λ =1300 nm Specific detectivity λ = 1300 nm D* VR = 0 V CJ 11 pF VR = 0 V Ee = 1mW/cm² IPh 0.95 µA Forward voltage Breakdown voltage 2) Junction capacitance Photo current at 1300 nm* 1) 2) Min 1.7 3 NEP V V 1750 200 5 4.0x10 nm pA GΩ -15 W/ Hz 12 cm ⋅ Hz ⋅ W −1 4.5x10 measured on bare chip for information only Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-1300-5-0.2 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-1300-5-0.2 Preliminary 6/21/2007 rev. 06/07 Typical Optical Responsivity (A/W) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2