SMD-Photodiode EPD-660-1-0.9 Preliminary 6/21/2007 rev. 03/07 Wavelength Type Technology Case Red SMD AlGaAs/GaAs SMD 1206 Description Narrow bandwidth and high spectral sensitivity in the red visible range (610…700 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays 1,2 0,5 2 all dimensions: mm all tolerances: ± 0,1 pad 1,15 x 1,0 1,2 Applications Light barriers, optical communications, safety equipment, alarm systems 1,0 R 0, 3 1,6 cathode 3,2 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.62 mm² Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IR = 10 µA VR 10 Dark current (Ee = 0 W/m²) VR = 1 V ID 40 Responsivity at λP VR = 0 V Sλ 0.42 A/W Peak sensitivity VR = 0 V λP 660 nm Sensitivity range at 50% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 660 nm NEP Specific detectivity λ = 660 nm D* 9.2x1012 cm ⋅ Hz ⋅ W −1 Junction capacitance VR = 0 V CJ 40 pF Switching time (RL = 50 Ω) VR = 1 V tr, tf 40 ns Breakdown voltage1) 1) Min V 300 620 700 80 200 pA nm nm 400 GΩ -15 W/ Hz 8.5x10 for information only Labeling Type Lot N° Typ. Sλ [A/W] Quantity EPD-660-1-0.9 *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 SMD-Photodiode EPD-660-1-0.9 Preliminary 6/21/2007 rev. 03/07 Optical sensitivity (typically) Sensitivity (arb. units) 1,0 0,8 0,6 0,4 0,2 0,0 500 550 600 650 700 750 800 W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2