Photodiode EPD-660-3-0.5 6/21/2007 Preliminary rev. 03/07 Wavelength Type Technology Case Red water clear AlGaAs/GaAs 3 mm plastic lens 30,0 ±1,0 1,5 2,5 Ø2,9 0,5 0,7 max 4,3 Description Selective photodiode mounted in standard 3 mm package with standoff . Narrow response range (660 nm peak) by means of integrated filter Note: Special packages without standoff available on request Applications 1,0 Ø3,1 0,65 4,0 1,0 Anode Optical communications, safety equipment, automation, analytics Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.17 mm² Temperature coefficient of ID TC(ID) 4 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -40 to +100 °C Tsld 260 °C ϕ 60 deg. Typ Max Unit Active area t ≤ 3 s, 3 mm from case Soldering Temperature Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 1 V ID 40 Peak sensitivity wavelength VR = 0 V λp 660 nm Responsivity at λP VR = 0 V Sλ 0.42 A/W VR = 0 V λmin, λmax VR = 0 V ∆λ0.5 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 660 nm NEP Specific detectivity λ = 660 nm D* Junction capacitance VR = 0 V CJ 50 pF Switching time (RL = 50 Ω) VR = 1 V tr , tf 15/30 ns VR = 0 V Ev = 1000 lx IPh 0.33 µA Breakdown voltage1) Sensitivity range at 1% 1) Spectral bandwidth at 50% Photo-current at illuminant A1,2) 1) 2) V 200 605 500 705 pA nm 80 nm 670 GΩ 8.5x10-15 4.8x10 W/ Hz cm ⋅ Hz ⋅ W −1 12 for information only Standard light source with a color temperature of 2856 K Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-660-3-0.5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-660-3-0.5 6/21/2007 Preliminary Relative Photocurrent vs. Temperature Typical responsivity 1,30 1.0 1,25 UR = 5V TK = 0,25%/K 1,20 0.8 R elative Photocurrent 1,15 0.6 0.4 1,10 1,05 1,00 0,95 0.2 0,90 0,85 0.0 500 550 600 650 700 750 0,80 800 -40 -20 0 20 40 60 80 100 120 Temperature (°C) Wavelength [nm] Dark Current vs. Temperature Short-circuit current vs. illuminance (typical) 2) 100 0 UR = 5V TK = 1,05 times/K 10 Short-circuit current (µA) 10 Dark Current (pA) rel. responsivitiy (arb. units) rev. 03/07 1 -1 10 -2 10 -3 10 0,1 -4 -40 -20 0 20 40 Temperature (°C) 60 80 100 120 10 -1 10 0 10 1 10 Illuminance [lx] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 10 3 10 2 of 2