Photodiode EPD-740-5-0.9 6/28/2007 Preliminary rev. 02/07 Wavelength Type Technology Case Infrared water clear AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range (740 nm peak) by means of integrated filter 9 - 0,5 5,3 - 0,3 2,54 2 - 1,0 0,8 - 0,4 6 - 0,3 1,1 - 0,1 Anode 0,6 - 0,2 31,8 - 1,7 Note: Special packages with standoff available on request Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.62 mm² Temperature coefficient of ID TC(ID) 5 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -40 to +125 °C Tsld 260 °C ϕ 20 deg. Typ Max Unit Active area t ≤ 3 s, 3 mm from case Soldering Temperature Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 5 V ID 40 Peak sensitivity wavelength VR = 0 V λp 740 nm Responsivity at λP VR = 0 V Sλ 0.5 A/W Spectral range at 10 % VR = 0 V λ0.5 Spectral bandwidth at 50% VR = 0 V ∆λ0.4 80 Shunt resistance VR = 10 mV RSH 300 Noise equivalent power λ = 740 nm NEP Specific detectivity λ = 740 nm D* 1.1x1013 cm ⋅ Hz ⋅ W −1 Junction capacitance VR = 0 V CJ 120 pF Switching time (RL = 50 Ω) VR = 5 V tr , tf 170 ns VR = 0 V Ee = 1mW/cm² IPh 15 µA Breakdown voltage1) Photo-current at λP 2) 1) 2) V 200 680 770 7.2x10 pA nm nm GΩ -15 W/ Hz for information only Halogen lamp source with appropriate filter Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-740-5-0.9 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-740-5-0.9 6/28/2007 Preliminary Short-circuit current vs. ambient temperature Typical responsivity spectrum 1,0 1,04 0,8 Short-circuit current (arb. units) rel. Responsivity (arb. units) rev. 02/07 0,6 0,4 1,00 0,96 0,2 0,0 600 650 700 750 800 0,92 -40 850 -20 0 Wavelength (nm) Dark Current vs. Temperature 20 40 Ambient temperature [°C] 60 Short-circuit current vs. irradiance (typical) 100 2) 3 10 UR = 5V TK = 1,05 times/K 2 Short-circuit current (nA) Dark Current (pA) 10 1 10 1 10 0 10 -1 10 0,1 -2 10 -40 -20 0 20 40 Temperature (°C) 60 80 100 120 -2 10 -1 10 0 10 2 Irradiance [mW/cm ] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 10 2 10 2 of 2