STANFORD SSW308

Product Description
SSW-308
Stanford Microdevices’ SSW-308 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch housed
in a low-cost surface-mountable small outline plastic
package.
DC-3 GHz Low Cost
GaAs MMIC SPDT Switch
This single-pole, double-throw, reflective switch consumes
less than 40uA and operates with 0V/-5V control voltages.
This switch can be used in both analog and digital wireless
communication systems including AMPS, PCS, DECT, and
GSM.
Typical output power at 1dB compression is +28dBm. 1dB
output power over 1 watt may be achieved with higher
control voltages.
The die is fabricated using 0.5 micron FET process with gold
metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Isolation vs. Frequency
VControl = -5 V
-10
-20
Product Features
• Fast Switching Speed : 3nsec
• HIgh LInearity : +47dBm IP3
• Ultra Low DC Power Consumption
• Low Insertion Loss : 0.7dB at 1GHz
• Low Cost Small Outline Plastic Package
Applications
• Digital Cellular
• Spread Spectrum
dB -30
-40
-50
DC
1
2
3
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : T e s t C o n d itio n s :
Z 0= 5 0 o h m s
U n its
M in .
Ty p .
M ax.
0 .6
0 .9
1 .2
0 .9
1 .3
In s
In s e r tio n L o s s
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
dB
dB
dB
Is o l
Is o la tio n
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
dB
dB
dB
In p u t & O u tp u t V S W R
( lo w lo s s s ta te )
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
1 d B C o m p r e s s io n a t 0 .5 - 2 .0 G H z
V = -8 V
V = -5 V
dBm
dBm
+31
+28
T h ir d O r d e r In te r c e p t
V = -8 V
V = -5 V
dBm
dBm
+50
+47
uA
35
nsec
3
VSW R on
P 1dB
IP 3
ID
Is w
D e v ic e C u r r e n t
S w itc h in g S p e e d 5 0 % c o n tr o l to
1 0 % /9 0 % R F
20
17
25
22
16
-
1 .2 :1
1 .4 :1
1 .7 :1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
7-21
http://www.stanfordmicro.com
Switches
GHz
SSW-308 DC-3 GHz GaAs MMIC SPDT Switch
Truth Table
Absolute Maximum Ratings
RF Input Power
2W Max>500MHz
Control Voltage
-10V
Operating Temperature
-45Cto +85C
Storage Temperature
-65C to +150C
Thermal Resistance
20 deg C/W
V1
V2
J1- J2
J1- J3
0
-5
Low Loss
I sol at i on
-5
0
I sol at i on
Low Loss
Switch Schematic
Pin Out
Pin
Function
1
V1
2
J1
3
GND
4
V2
5
J3
6
GND
7
GND
8
J2
Switches
Insertion Loss vs. Frequency
VControl = -5 V
On Port VSWR vs. Frequency
VControl = -5 V
0.0
2.0
1.8
-0.5
1.6
dB -1.0
1.4
-1.5
1.2
-2.0
DC
1.0
1
2
3
DC
GHz
522 Almanor Ave., Sunnyvale, CA 94086
1
2
3
GHz
Phone: (800) SMI-MMIC
7-22
http://www.stanfordmicro.com