EPA160B-100P High Efficiency Heterojunction Power FET UPDATED 05/05/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 10dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY D G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS MIN TYP 29.0 31.0 31.0 10.0 5.0 PAE Output Power at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Gain at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Power Added Efficiency at 1dB Compression Vds=8 V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 290 480 Gm Transconductance Vds=3V, Vgs=0V 320 500 Vp Pinch-off Voltage Vds=3V, Ids=4.5mA P1dB G1dB PARAMETERS/TEST CONDITIONS 8.5 MAX UNIT dBm dB 41 % 660 mA mS -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=1.6mA -13 -15 V BVgs Source Breakdown Voltage Igs=1.6mA -7 -14 V 35* ºC/W Rth Thermal Resistance (Au-Sn Eutectic Attach) Note: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 7.2 mA -1.2 mA 28 dBm 175oC -65/175oC 4.0 W 8V -3V 2.4 mA -0.4 mA @ 3dB Compression 175oC -65/175oC 4.0 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised May 2006