EPA120E-CP083 High Efficiency Heterojunction Power FET UPDATED 02/15/2005 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +29 dBm OUTPUT POWER AT 1dB COMPRESSION 19.5 dB GAIN AT 2 GHz 0.3x1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB PAE All Dimensions in mil Tolerance: ± 3 mil PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 12.0 GHz 2.0 GHz 12.0 GHz MIN TYP 27.5 29.0 29.0 19.5 7.0 18.0 MAX UNITS dBm dB 43 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 210 360 GM Transconductance VDS = 3 V, VGS = 0 V 240 380 VP Pinch-off Voltage VDS = 3 V, IDS = 3.5 mA -1.0 % 510 mA mS -2.5 V BVGD Drain Breakdown Voltage IGD = 1.2 mA -13 -15 V BVGS Source Breakdown Voltage IGS = 1.2 mA -7 -14 V RTH* Thermal Resistance 40 o C/W Notes: * Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage -3 V IDS Drain Current 405 mA IGSF Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 3.8 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2005