EFA240D-CP083 Low Distortion GaAs Power FET UPDATED 06/13/2006 .096 .290±0.005 FEATURES • • • • • • 2X .065 ±.015 NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +30.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY P1dB G1dB PAE .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL .160 PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 29.0 30.5 30.5 17.0 12.0 15.5 MAX UNITS dBm dB 40 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 400 680 GM Transconductance VDS = 3 V, VGS = 0 V 280 360 VP Pinch-off Voltage VDS = 3 V, IDS = 6 mA -2.0 % 880 mA mS -3.5 V BVGD Drain Breakdown Voltage IGD = 2.4 mA -13 -15 V BVGS Source Breakdown Voltage IGS = 2.4 mA -7 -14 V RTH* Thermal Resistance 25 30 o C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 10V -5V 10.8 mA -1.8 mA 27 dBm 175oC -65/175oC 5.0W 8V -4V 3.6 mA -0.6 mA @ 3dB Compression 175oC -65/175oC 5.0W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006