EPA018BV-70SC High Efficiency Heterojunction Power FET ISSUED 01/31/2006 FEATURES • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 18GHz Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz 0.3 x 180 Micron Recessed “Mushroom” Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency, and High Reliability Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) NF PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12GHz f = 18GHz VDS = 6V, IDS ≈ 50% IDSS Gain at 1dB Compression f = 12GHz f = 18GHz VDS = 6V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression f = 12GHz VDS = 6V, IDS ≈ 50% IDSS Noise Figure VDS = 2V, IDS = 15mA f = 12GHz SYMBOL P1dB G1dB PAE MIN 18.5 12.0 TYP 20.0 20.0 14 12 dB Saturated Drain Current VDS = 3 V, VGS = 0 V 40 55 GM Transconductance VDS = 3 V, VGS = 0 V 35 60 VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA BVGD Drain Breakdown Voltage IGD = 1.0mA -9 -15 BVGS Source Breakdown Voltage IGS = 1.0mA -6 -14 |S21| 12.5 -1.0 480* f = 24GHz dB 0.75 Associate Gain VDS = 2V, IDS = 15mA Thermal Resistance Insersion Gain in dB VDS = 6V, IDS ≈ 50% IDSS dBm % GA RTH UNITS 45 IDSS f = 12GHz MAX 2.5 dB 90 mA mS -2.5 V V V o C/W dB Notes: * Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL 1. 2. CHARACTERISTIC VALUE VDS Drain to Source Voltage 6V VGS Gate to Source Voltage -3 V IDS Drain Current 40 mA IGSF Forward Gate Current 1.5 mA PIN Input Power PT Total Power Dissipation TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression 240 mW Exceeding any of the above ratings may result in permanent damage. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1of 1 Revised January 2006