EPA240D-100P High Efficiency Heterojunction Power FET UPDATED 11/14/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +33 dBm TYPICAL OUTPUT POWER 20 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY D G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS MIN TYP 31.0 33.0 33.0 20.0 14.5 PAE Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8 V, Ids=50% Idss f=2GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 440 720 Gm Transconductance Vds=3V, Vgs=0V 480 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA P1dB G1dB PARAMETERS/TEST CONDITIONS 18.5 MAX UNIT dBm dB 55 -1.0 % 940 mA mS -2.5 V BVgd Drain Breakdown Voltage Igd=2.4mA -11 -15 V BVgs Source Breakdown Voltage Igs=2.4mA -7 -14 V 26* ºC/W Thermal Resistance (Au-Sn Eutectic Attach) Rth * Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 Drain-Source Voltage 12V Vds Gate-Source Voltage -8V Vgs Drain Current Idss Ids Forward Gate Current 120mA Igsf Input Power 30 dBm Pin Channel Temperature 175 oC Tch Storage Temperature -65 to +175 oC Tstg Total Power Dissipation 6.0W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. CONTINUOUS2 8V -3V 620mA 20mA @ 3dB Compression 150 oC -65 to +150 oC 5.0W Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2005