EFE960EV-250P Low Distortion GaAs Power FET ISSUED 01/03/2006 FEATURES • • • • • • Non-Hermetic 250mil Metal Flange Package +36.5 dBm Typical Output Power 15.0 dB Typical Power Gain at 2GHz 0.6 x 9600 Micron Recessed “Mushroom”Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency and High Reliability Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS ≈ 50% IDSS MIN 35.0 13.5 IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression VDS = 10 V, IDS ≈ 50% IDSS f = 2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V GM Transconductance VP P1dB G1dB PAE TYP 36.5 36.5 15.0 11.0 MAX UNITS dBm dB 36 1500 2000 VDS = 3 V, VGS = 0 V 1000 Pinch-off Voltage VDS = 3 V, IDS = 20 mA -2.5 BVGD Drain Breakdown Voltage IGD = 9.6 mA -19 -22 BVGS Source Breakdown Voltage IGS = 9.6 mA -10 -20 Thermal Resistance RTH * Overall Rth depends on case mounting. % 2500 mA mS -4.0 V V V 5.5* 6.0* o C/W MAXIMUM RATINGS1,2 (Ta = 25°C) SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS VDS Drain to Source Voltage 15 V 10 V VGS Gate to Source Voltage -5 V -4 V IDS Drain Current Idss 2.5 A IGSF Forward Gate Current 43.2 mA 14.4 mA IGSR Reverse Gate Current -7.2 mA -2.4 mA PIN Input Power 33.5 dBm @ 3dB compression PT Total Power Dissipation 25 W 25 W TCH Channel Temperature 175°C 175°C TSTG Storage Temperature -65/+175°C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. -65/+175°C Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1of 1 Revised January 2006