HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Typical Applications Features The HMC154S8 / HMC154S8E is ideal for: High Third Order Intercept: +60 dBm • MMDS & WirelessLAN Single Positive Supply: +3 to +10V • Basestation Infrastructure High RF Power Capability • Portable Wireless TTL/CMOS Control Functional Diagram General Description The HMC154S8 & HMC154S8E are low-cost SPDT switches in 8-lead SOIC packages for use in transmitreceive applications which require very low distortion at high signal power levels. The device can control signals from DC to 2.5 GHz and is especially suited for 900 MHz and 1.8 - 2.2 GHz applications. The design provides exceptional intermodulation performance; providing a +60dBm third order intercept at 8 Volt bias. RF1 and RF2 are reflective shorts when “Off”. On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. SWITCHES - SMT 14 Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Min. Typ. Max. Units 0.5 0.7 1.0 0.7 0.9 1.3 dB dB dB Insertion Loss Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz 22 19 15 25 22 18 dB dB dB Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz 20 14 10 30 18 13 dB dB dB Input Power for 1 dB Compression 0/8V Control 0.5 - 1.0 GHz 0.5 - 2.0 GHz 35 34 39 38 dBm dBm Input Third Order Intercept 0/8V Control 0.5 - 1.0 GHz 0.5 - 2.0 GHz 55 54 60 60 dBm dBm 10 24 ns ns Switching Characteristics 14 - 2 Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 2.5 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Insertion Loss Isolation 0 -1 -10 ISOLATION (dB) INSERTION LOSS (dB) 0 -2 -3 -4 -5 -20 -30 -40 0 1 2 3 4 0 1 FREQUENCY (GHz) 2 3 FREQUENCY (GHz) 4 14 Return Loss SWITCHES - SMT RETURN LOSS (dB) 0 -10 -20 -30 -40 0 1 2 3 4 FREQUENCY (GHz) Input Power for 0.1 and 1.0 dB Compression vs. Bias Voltage Input Third Order Intercept vs. Bias Voltage 45 65 60 1db at 1900MHz 900MHz 40 IP3 (dBm) COMPRESSION (dBm) 1dB at 900MHz 35 0.1dB at 900MHz 55 50 1900MHz 45 30 40 0.1dB at 1900MHz 35 25 2 4 6 8 BIAS (Volts) 10 12 2 4 6 8 BIAS (Volts) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 12 14 - 3 HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Compression vs. Bias Voltage Carrier at 900 MHz Carrier at 1900 MHz Bias Vdd Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression (Volts) (dBm) (dBm) (dBm) (dBm) 30 3 27 31 26 4 30 34 29 33 5 32 36 31 35 8 36 39 35 38 10 37 40 36 39 Caution: Do not operate in 1dB compression at power levels above +35dBm and do not “hot switch” power levels greater than +23dBm (Vdd = +5V). Distortion vs. Bias Voltage SWITCHES - SMT 14 14 - 4 1 Watt Carrier at 900 MHz 1 Watt Carrier at 1900 MHz Second Harmonic Third Order Intercept Second Order Intercept Second Harmonic (dBm) (dBc) (dBm) (dBm) (dBc) 71 45 42 78 55 85 55 46 88 65 58 Bias Vdd Third Order Intercept Second Order Intercept (Volts) (dBm) 3 43 4 48 5 53 90 56 51 87 8 60 90 58 60 90 59 10 60 90 59 60 90 60 Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Bias Vdd (Vdc) Control Input* A (Vdc) Bias Current Control Current Control Current B (Vdc) Idd (uA) Ia (uA) Ib (uA) Signal Path State RF to RF1 RF to RF2 3 0 0 30 -15 -15 OFF OFF 3 0 Vdd 25 -25 0 ON OFF 3 Vdd 0 25 0 -25 OFF ON 5 0 0 110 -55 -55 OFF OFF 5 0 Vdd 115 -100 -15 ON OFF 5 Vdd 0 115 -15 -100 OFF ON 10 0 0 380 -190 -190 OFF OFF 10 0 Vdd 495 -275 -220 ON OFF 10 Vdd 0 495 -220 -275 OFF ON 5 -Vdd Vdd 600 -600 225 ON OFF 5 Vdd -Vdd 600 225 -600 OFF ON For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Absolute Maximum Ratings Bias Voltage Range (Vdd) -0.2 to +12 Vdc Control Voltage Range (A & B) -0.2 to Vdd Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing SWITCHES - SMT 14 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC154S8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC154S8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] HMC154 XXXX [2] HMC154 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 5 HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Typical Application Circuit SWITCHES - SMT 14 14 - 6 Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC154S8 / 154S8E v02.0805 GaAs MMIC SMT LOW DISTORTION T/R SWITCH, DC - 2.5 GHz Evaluation Circuit Board SWITCHES - SMT 14 List of Materials for Evaluation PCB 101788 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 330 pF Capacitor, 0402 Pkg. U1 HMC154S8 / HMC154S8E SPDT Switch PCB [2] 101786 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 7