HMC259 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Typical Applications Features The HMC259 is ideal for: Sub-Harmonically Pumped (x2) LO • Point to Point Radios High 2LO/RF Isolation: >35 dB • LMDS Small Size: 1.24mm x 1.55mm • SATCOM Functional Diagram General Description The HMC259 chip is a broadband sub-harmonically pumped (x2) balanced MMIC passive mixer which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET process resulting in a small overall chip area of 1.9mm2. This chip has a very wide IF bandwidth of DC-13 GHz. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31mm (<12 mils). This device is a much smaller and more reliable replacement to hybrid diode mixer designs. MIXERS - CHIP 5 Electrical Specifications, TA = +25° C, LO Drive = +15 dBm IF = 1 GHz IF = 1 GHz Parameter Units Min. Frequency Range, RF Typ. Max. Min. Typ. Max. 28 - 40 36 - 40 GHz Frequency Range, LO 14 - 20 18 - 20 GHz Frequency Range, IF DC - 12 DC - 4 GHz Conversion Loss 14 17 12 15 dB Noise Figure (SSB) 14 17 12 15 dB 2LO to RF I s olation 28 35 40 50 2LO to I F I s olation 58 65 63 68 dB RF to IF Isolation 25 30 25 32 dB LO to IF Isolation 10 15 12 17 dB I P 3 (Input) 2 5 2 6 dBm 1 dB Compression (Input) -7 -4 -7 -1 dBm *Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 5 - 120 dB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] MICROWAVE CORPORATION HMC259 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Conversion Gain vs. Temperature @ LO = +15 dBm Isolation @ LO = +15 dBm 0 RF/LO -5 -55 C -20 +25 C ISOLATION (dB) CONVERSION GAIN (dB) 0 -10 -15 RF/IF LO/IF -40 2LO/IF 2LO/RF -60 -20 +85 C -25 -80 26 28 30 32 34 36 38 40 24 26 28 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 34 36 38 40 35 40 0 -5 -5 +15 dBm RETURN LOSS (dB) CONVERSION GAIN (dB) 32 Return Loss @ LO = +15 dBm 0 -10 -15 -20 +16 dBm +13 dBm -25 +14 dBm IF -10 -15 LO & RF -20 -25 -30 -35 -30 5 -40 24 26 28 30 32 34 36 38 0 40 5 10 RF FREQUENCY (GHz) IF Bandwidth @ LO = +15 dBm 0 -5 -5 -15 -20 -25 20 25 30 Upconverter Performance Conversion Gain @ LO = +15 dBm 0 -10 15 FREQUENCY (GHz) CONVERSION GAIN (dB) IF CONVERSION GAIN (dB) 30 RF FREQUENCY (GHz) MIXERS - CHIP 24 -10 -15 -20 -25 -30 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IF FREQUENCY (GHz) 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 5 - 121 HMC259 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Input IP3 vs. Temperature @ LO = +15 dBm Input IP3 vs. LO Drive 20 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) 20 +16 dBm 16 +15 dBm 12 8 4 +14 dBm 0 26 28 30 32 34 36 38 12 +25 C 8 4 -55 C 40 24 26 28 RF FREQUENCY (GHz) SECOND ORDER INTERCEPT (dBm) SECOND ORDER INTERCEPT (dBm) +16 dBm 40 +14 dBm 30 20 +15 dBm 10 0 34 36 40 38 40 60 -55 C 50 40 +25 C 30 20 10 +85 C 26 28 30 32 34 36 38 40 24 26 28 RF FREQUENCY (GHz) ±5 ±4 32 34 36 P1dB vs. Temperature @ LO = +15 dBm nLO mRF 30 RF FREQUENCY (GHz) MxN Spurious Outputs 5 ±3 ±2 ±1 4 0 +85 C 3 -3 -37 -1 -46 -48 -22 -28 +29 x -24 1 2 -40 -44 -76 RF = 30 GHz @ -15 dBm LO = 14 GHz @ +15 dBm All values in dBc below the IF power level -81 -29 P1dB (dBm) 2 -2 0 +25 C 1 0 -1 -55 C -2 -3 -4 -5 24 26 28 30 32 34 36 RF FREQUENCY (GHz) 5 - 122 38 0 24 3 32 Input IP2 vs. Temperature @ LO = +15 dBm 60 50 30 RF FREQUENCY (GHz) Input IP2 vs. LO Drive MIXERS - CHIP +85 C 0 24 5 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 38 40 HMC259 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +23 dBm Storage Temperature -65 to +150 deg C Operating Temperature -55 to +85 deg C 5 RF 1.55 (0.061) BACKSIDE IS GROUND IF 1.35 (0.053) 0.76 (0.030) Hittite MIXERS - CHIP Outline Drawing ALL DIMENSIONS IN MILLIMETERS (INCHES) ALL TOLERANCES ARE ±0.025 (0.001) DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND BOND PADS ARE 0.100 (0.004) SQUARE BOND PAD SPACING, CTR-CTR: 0.150 (0.006) BACKSIDE METALLIZATION: GOLD BOND PAD METALLIZATION: GOLD LO 0.10 (0.004) 0.10 (0.004) 0.15 (0.006) 1.04 (0.041) 1.24 (0.049) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 5 - 123 HMC259 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz MMIC Assembly Techniques for HMC259 MIXERS - CHIP 5 Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Figure 3: Typical HMC259 Assembly Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 5 - 124 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC259 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 5 MIXERS - CHIP General Handling: Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 5 - 125