MICROWAVE CORPORATION HMC260 v01.0301 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Typical Applications Features The HMC260 is ideal for: Passive: No DC Bias Required • Point to Point Radios Input IP3: +20 dBm • Point to Multi Point Radios LO/RF Isolation: 39 dB Small Size: 0.55mm2 Functional Diagram The HMC260 is a passive double balanced mixer that can be used as an upconverter or downconverter between 14 and 26 GHz. The miniature monolithic mixer (MMIC) requires no external components or matching circuitry. The HMC260 provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The mixer operates with LO drive levels above +9 dBm. Measurements were made with the chip mounted and bonded into in a 50 ohm test fixture. Data includes the parasitic effects of wire bond assembly. Connections were made with a 3 mil ribbon bond with minimal length (<12 mil). 5 MIXERS - CHIP General Description Electrical Specifications, TA = +25° C LO = +13 dBm, IF = 1 GHz Parameter Units Min. Typ. Max. Frequency Range, RF & LO 14 - 26 GHz Frequency Range, IF DC - 8 GHz Conversion Loss 7.5 10.5 dB Noise Figure (SSB) 7.5 10.5 dB LO to RF Isolation 30 39 dB LO to IF Isolation 25 35 dB RF to IF Isolation 18 25 dB IP3 (Input) 13 20 dBm IP2 (Input) 45 55 dBm 1 dB Gain Compression (Input) 6 11 dBm *Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 5 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC260 v01.0301 MICROWAVE CORPORATION GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Conversion Gain vs. Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm 0 + 25 C + 85 C - 55 C -3 RF/IF LO/RF LO/IF -10 ISOLATION (dB) -6 -9 -12 -20 -30 -40 -50 -15 -60 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) Conversion Gain vs. LO Drive 22 24 26 0 + 9 dBm + 11 dBm + 13 dBm + 15 dBm -3 -5 RETURNLOSS (dB) CONVERSION GAIN (dB) 20 Return Loss @ LO = +13 dBm 0 -6 -9 -12 -10 -15 -20 -15 5 LO RF -25 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 20 22 24 26 Upconverter Performance Conversion Gain @ LO = +13 dBm 0 -4 -4 CONVERSION GAIN (dB) 0 -8 -12 IF Return Loss -16 18 FREQUENCY (GHz) IF Bandwidth @ LO = +13 dBm RESPONSE (dB) 18 FREQUENCY (GHz) MIXERS - CHIP CONVERSION GAIN (dB) 0 -8 -12 -16 Conversion Gain -20 -20 0 2 4 6 8 FREQUENCY (GHz) 10 12 12 14 16 18 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 45 MICROWAVE CORPORATION HMC260 v01.0301 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Input IP3 vs. Temperature @ LO = +13 dBm * Input IP3 vs. LO Drive * 20 15 10 + 11 dBm + 13 dBm + 15 dBm 5 0 5 20 15 10 + 25 C + 85 C - 55 C 5 0 14 16 18 20 22 24 26 14 16 LO FREQUENCY (GHz) 18 20 22 24 26 LO FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = +13 dBm * Input IP2 vs. LO Drive * 100 100 SECOND ORDER INTERCEPT (dBm) SECOND ORDER INTERCEPT (dBm) MIXERS - CHIP 25 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) 25 + 11 dBm + 13 dBm + 15 dBm 90 80 70 60 50 40 + 25 C + 85 C - 55 C 90 80 70 60 50 40 14 16 18 20 22 24 26 14 16 LO FREQUENCY (GHz) 18 20 22 24 26 LO FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +13 dBm MxN Spurious Outputs nLO 16 mRF 0 1 2 3 4 0 xx 9 19 xx xx 1 20 0 46 37 xx 2 64 72 68 82 95 3 xx 92 99 83 94 4 xx xx 102 >110 >110 P1dB (dBm) 14 12 10 + 25 C + 85 C - 55 C 8 6 14 15 16 17 18 19 20 21 22 23 24 25 26 FREQUENCY (GHz) RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF output power level. * Two-tone input power = -5 dBm each tone, 1 MHz spacing. 5 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC260 v01.0301 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Absolute Maximum Ratings RF / IF Input +15 dBm LO Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C IF DC Current ±4 mA Outline Drawing (See Handling Mounting Bonding Note) MIXERS - CHIP 5 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006”. 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 47 MICROWAVE CORPORATION HMC260 v01.0301 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz MIC Assembly Techniques Ribbon Bond Ribbon Bond MIXERS - CHIP 5 5 - 48 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0301 HMC260 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz GaAs Precautions MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 4060 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 MIXERS - CHIP Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 5 - 49