HMC-APH596 v02.0208 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Typical Applications Features This HMC-APH596 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output Die Size: 2.55 x 1.87 x 0.1 mm General Description Functional Diagram The HMC-APH596 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 16 and 33 GHz. The HMC-APH596 provides 17 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH596 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA [2] Parameter Min. Frequency Range Gain 16 Typ. Max. GHz 17 dB Input Return Loss 17 dB Output Return Loss 18 dB Output power for 1dB Compression (P1dB) 24 dBm Output Third Order Intercept (IP3) 33 dBm Supply Current (Idd1+Idd2) 400 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd total = 400 mA 3 - 208 Units 16 - 33 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Fixtured Pout vs. Frequency Gain vs. Frequency 24 36 22 32 18 16 14 3 P1dB P3dB IP3 @ 18dBm/tone 28 24 12 10 20 12 16 20 24 28 32 16 36 20 FREQUENCY (GHz) Input Return Loss vs. Frequency 28 32 36 Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 24 FREQUENCY (GHz) -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 -35 12 16 20 24 28 FREQUENCY (GHz) 32 36 12 16 20 24 28 32 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 36 LINEAR & POWER AMPLIFIERS - CHIP POUT (dBm) GAIN (dB) 20 3 - 209 HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - CHIP 3 Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input 6 dBm Thermal Resistance (Channel to die bottom) 56.6 °C/W Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C Drain Bias Current (Idd1) 180 mA Drain Bias Current (Idd2) 290 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 210 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vdd1 Power Supply Voltage for the amplifier. See assembly for required external components. 3 Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 6 Vgg1 Gate control for the amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 211 HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 212 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 3 0.076mm (0.003”) 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 213