HMC442 v03.1007 3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point and Point-to-Multi-Point Radios Supply Voltage: +5V • VSAT 50 Ohm Matched Input/Output Gain: 15 dB LINEAR & POWER AMPLIFIERS - CHIP Die Size: 1.03 x 1.13 x 0.1 mm Functional Diagram General Description The HMC442 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from a +5V supply voltage. The amplifier chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = 5V, Idd = 85 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 17.5 - 21.0 12 Gain Variation Over Temperature 14.5 0.02 Input Return Loss 12 0.03 Max. Min. 13.5 0.03 Max. dB 0.03 10 dB 10 dB 18 21 18.5 21.5 19 22 dBm Saturated Output Power (Psat) 20 23 20 23 20 23.5 dBm 27 dBm 29 Noise Figure 6.5 Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 85 28 5.5 110 85 6 110 85 dB 110 * Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85 mA typical. 3 - 16 dB/ °C Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) 10 Units GHz 16 0.02 13 10 Typ. 24.0 - 25.5 15 0.02 15 Output Return Loss Typ. 21.0 - 24.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC442 v03.1007 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Gain vs. Temperature 20 10 16 S21 S11 S22 0 -10 -20 3 12 +25 C +85 C -55 C 8 4 -30 0 14 17 20 23 26 29 16 17 18 19 FREQUENCY (GHz) Input Return Loss vs. Temperature 22 23 24 25 26 27 0 +25 C +85 C -55 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 21 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 -10 -15 +25 C +85 C -55 C -20 -25 -30 -30 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) 21 22 23 24 25 26 27 24 25 26 27 Psat vs. Temperature 30 26 26 Psat (dBm) 30 22 18 +25 C +85 C -55 C 14 20 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 20 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - CHIP 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 22 +25 C +85 C -55 C 18 14 10 10 16 17 18 19 20 21 22 23 FREQUENCY (GHz) 24 25 26 27 16 17 18 19 20 21 22 23 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 17 HMC442 v03.1007 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Power Compression @ 21 GHz Power Compression @ 25 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 35 Pout (dBm) Gain (dB) PAE (%) 20 16 12 8 4 0 -10 -6 -2 2 6 10 Pout (dBm) Gain (dB) PAE (%) 25 20 15 10 5 0 -10 14 -6 -2 10 30 8 NOISE FIGURE (dB) IP3 (dBm) 6 10 14 Noise Figure vs. Temperature 34 26 22 +25 C +85 C -55 C 18 2 INPUT POWER (dBm) Output IP3 vs. Temperature 6 4 +25 C +85 C -55 C 2 14 0 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) 20 21 22 23 24 25 26 26 27 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 25 GHz Reverse Isolation vs. Temperature 0 26 24 -10 ISOLATION (dB) 22 20 18 16 14 Gain P1dB Psat 12 10 2.7 +25 C +85 C -55 C -20 -30 -40 -50 -60 3.1 3.5 3.9 4.3 4.7 Vdd Supply Voltage (Vdc) 3 - 18 30 INPUT POWER (dBm) GAIN (dB), P1dB (dBm), Psat (dBm) LINEAR & POWER AMPLIFIERS - CHIP 3 Pout (dBm), GAIN (dB), PAE (%) 28 5.1 5.5 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442 v03.1007 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +5.5 Vdc Gate Bias Voltage (Vgg) -4 to 0 Vdc Vdd (Vdc) Idd (mA) +4.5 82 RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 85 Channel Temperature 175 °C +5.5 89 Continuous Pdiss (T= 85 °C) (derate 7.1 mW/°C above 85 °C) 0.64 W +2.7 79 +3.0 83 Thermal Resistance (channel to die bottom) 141 °C/W +3.3 86 Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 3 LINEAR & POWER AMPLIFIERS - CHIP Absolute Maximum Ratings Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 19 HMC442 v03.1007 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Pad Descriptions LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 20 Pad Number Function Description 1 Vgg Gate control for amplifier. Adjust to achieve Id of 85 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 2 RFIN This pad is AC coupled and matched to 50 Ohms. 3 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 μF are required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442 v03.1007 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 3 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. RF Ground Plane Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 21