P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9015 █ APPLICATIONS LOW FREQUENCY，LOW NOISE AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………450mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO ——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-45V VE B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Uni t Test Conditions ICBO Collector Cut-off Current －０．０５ μＡ IEBO Emitter Cut-off Current －０．０５ μＡ ６０ ８００ VCE=-5V, IC=-1mA ０．７ Ｖ IC=-100mA, IB=-5mA －５０ －４５ －５ １００ ４．５ HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage BVCBO BVCEO BVEBO Cob fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Output Capacitance Current Gain-Bandwidth Product ＶＣＢ＝－３０Ｖ， ＩＥ＝０ VEB=-5V, IC=0 IC=-100mA, IB=-5mA －１．０ Ｖ Ｖ IC=-100μA, IE=0 Ｖ IC=-1mA, IB=0 Ｖ IE=-100μA，IC=0 ７．０ ｐＦ VCB=-10V, IE=0，f=1MHz ＭＨｚ VCE=-5V, IC=-10mA █ hFE Classification A ６０—１５０ B １００—３００ C D ２００—６００ ４００—８００ Shantou Huashan Electronic Devices Co.,Ltd. H9015