P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=150V. Collector Dissipation:Pc(max)=625mW █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………-160V VCEO——Collector-Emitter Voltage……………………………-150V V EBO ——Emitter-Base Voltage………………………………-5V IC——Collector Current………………………………………-600mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Unit Test Conditions -160 V IC=-100μA, IE=0 Collector-Emitter Breakdown Voltage -150 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -50 nA VCB=-120V, IE=0 IEBO Emitter-Base Cut-off Current -50 nA VEB=-3V, IC=0 HFE（1） DC Current Gain 60 HFE（3） 50 Collector- Emitter Saturation Voltage VCE(sat2) VBE(sat1) Base-Emitter Saturation Voltage VBE(sat2) fT Current Gain-Bandwidth Product Max 30 HFE（2） VCE(sat1) Typ 100 VCE=-5V, IC=-1mA 280 VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA -0.2 V IC=-10mA, IB=-1mA -0.5 V IC=-50mA, IB=-5mA -1 V IC=-10mA, IB=-1mA -1 V 400 MHz IC=-50mA, IB=-5mA, VCE=-10V, IC=-10mA F=100MHz