N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 █ LOW FREQUENCY AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………0.75W 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………40V VCEO ——Collector-Emitter Voltage……………………………20V VE B O ——Emitter -Base Voltage………………………………7V IC——Collector Current……………………………………300mA I C —— Collector Current ………………………… …… … …5 A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage ２０ Ｖ BVEBO Emitter-Base Breakdown Voltage ７ Ｖ ICBO Collector Cut-off Current １００ IEBO Emitter Cut-off Current １００ HFE（1） DC Current Gain １８０ ８００ VCE=2V, IC=0.5A HFE（2） DC Current Gain １５０ VCE=2V, IC=2A VCE(sat) Collector- Emitter Saturation Voltage １５０ １ ５０ fT Cob Current Gain-Bandwidth Product Output Capacitance IC=1mA, IB=0 IE=10μA，IC=0 ｎＡ VCB=10V, IE=0 ｎＡ VEB=7V, IC=0 Ｖ IC=3A, IB =0.1A ＭＨｚ VCE=6V, IC=50mA ｐＦ VCB=20V, IE=0，f=1ＭＨｚ