N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………180V VCEO——Collector-Emitter Voltage……………………………160V V EB O ——Emitter-Base Voltage………………………………6V IC——Collector Current………………………………………600mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Unit Test Conditions 180 V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage 160 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 6 V IE=10μA，IC=0 ICBO Collector Cut-off Current 50 nA VCB=120V, IE=0 IEBO Emitter-Base Cut-off Current 50 nA VEB=4V, IC=0 HFE（1） DC Current Gain 80 HFE（3） 30 Collector- Emitter Saturation Voltage VCE(sat2) VBE(sat1) Base-Emitter Saturation Voltage VBE(sat2) fT Current Gain-Bandwidth Product Max 80 HFE（2） VCE(sat1) Typ 100 VCE=5V, IC=1mA 280 VCE=5V, IC=10mA VCE=5V, IC=50mA 0.15 V IC=10mA, IB=-1mA 0.2 V IC=50mA, IB=5mA 1 V IC=10mA, IB=1mA 1 V 300 MHz IC=50mA, IB=5mA, VCE=10V, IC=10mA F=100MHz