HUASHAN H562

PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H562
█ APPLICATIONS
Low frequency power amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
VCBO ——Collector-Base Voltage………………………………-35V
1―Emitter，E
2―Collector，C
3― Base，B
VCEO——Collector-Emitter Voltage……………………………-30V
VE B O ——Emitter-Base Voltage………………………………-5V
IC——Collector Current………………………………………-500mA
IE ——Emitter
Current………………………………………500mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　Typ　Max　Unit Test Conditions ICBO
Collector Cut-off Current
－１００　ｎＡ　VCB=-35V, IE=0
IEBO
Emitter Cut-off Current
－１００　ｎＡ　VEB=-5V, IC=0
HFE（1）　DC Current Gain　７０　２４０　VCE=-1V, IC=-100mA　HFE（2）　DC Current Gain　２５　VCE=-6V, IC=-400mA　VCE(sat)　VBE　fT
Collector- Emitter Saturation Voltage　－０．１　－０．２５　Ｖ　IC=-100mA, IB=-10mA Base-Emitter Voltage　－０．８　－１．０　Ｖ　VCE=1V, IC=100mA　１５０　２００　１３　Current Gain-Bandwidth Product
Cob
Output Capacitance
ＭＨｚ　VCE=-6V, IC=-20mA
ｐＦ　VCB=-6V, IE=0，f=1ＭＨｚ
█ hFE Classification
O
７０—１４０　Y
１２０—２４０