N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD880 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 30W VCBO ——Collector-Base Voltage……………………………60V 1―Base，B VCEO——Collector-Emitter Voltage………………………… 60V 2―Collector，C 3―Emitter, E VEBO ——Emitter-Base Voltage……………………………… 7V IC——Collector Current……………………………………… 3A Ib——Base Current………………………………………0.3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Min Typ Max 60 Collector-Emitter Breakdown Voltage Unit V Test Conditions IC=50mA, IB=0 ICBO Collector Cut-off Current 100 μA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 μA VEB=7V, IC=0 HFE（1） DC Current Gain 60 HFE（2） DC Current Gain 20 VCE=5V, IC=0.5A 300 VCE=5V, IC=3A VCE(sat) Collector- Emitter Saturation Voltage 0.4 1 V IC=3A, IB=0.3A VBE(on) Base-Emitter On Voltage 0.7 1 V VCE=5V, IC=0.5A VCE=5V, IC=0.5A, ft Current Gain-Bandwidth Product 3 MHz Cob Output Capacitance 70 pF tON Turn-On Time 0.8 μS tSTG Storage Time 1.5 μS Fall Time 0.8 μS tF VCB=10V, IE=0，f=1MHz █ hFE Classification O 60—120 Y GR 100—200 150—300 IB1= -IB2=0.2A VCC=30V Shantou Huashan Electronic Devices Co.,Ltd. HD880