NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2120 █ APPLICATIONS Audio Power Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………600mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………35V VCEO——Collector-Emitter Voltage……………………………30V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………800mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 35 V IC=0.1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 30 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=0.1mA，IC=0 HFE（1） DC Current Gain 100 HFE（2） DC Current Gain 35 VCE(sat) Collector- Emitter Saturation Voltage VCE=1V, IC=100mA 320 VCE=1V, IC=700mA 0.5 V IC=500mA, IB=20mA 0.8 V VCE=1V, IC=10mA VBE Base-Emitter Voltage ICBO Collector Cut-off Current 100 nA VCB=35V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Cob Current Gain-Bandwidth Product Output Capacitance 0.5 120 13 █ hFE Classification O Y 100—200 160—320 MHz pF VCE=5V, IC=10mA VCB=10V, IE=0，f=1MHz NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2120