NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX2785 █ APPLICATIONS Amplifier And Speed Switching． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………250mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………60V VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage………………………………5V I C ——Collector Current …………………………………… 100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit ５０ Ｖ Test Conditions IC=1mA, IB=0 ICBO Collector Cut-off Current ０．１ μA VCB=60V, IE=0 ０．１ μA VEB=5V, IC=0 IEBO Emitter Cut-off Current HFE（1） DC Current Gain ５０ １８５ VCE=6V, IC=0.1mA HFE（2） DC Current Gain １１０ ２００ ６００ VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage ０．１５ ０．３ Ｖ IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage ０．８６ Ｖ IC=100mA, IB=10mA VBE Base-Emitter Voltage fT Cob Current Gain-Bandwidth Product １ ０．５５ ０．６２ ０．６５ Ｖ VCE=6V, IC=1mA １５０ ２５０ ４５０ ＭＨｚ VCE=6V, IC=10mA ３ ４ ｐＦ VCB=6V, IE=0，f=1ＭＨｚ Output Capacitance █ hFE Classification R １１０—１８０ J １３５—２２０ H １７０—２７０ F ２００—３２０ E ２５０—４００ K ３００—６００