NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H6718V █ APPLICATIONS . Audio Amplifie，switching Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（TA=25℃）………………… 1.6W VCBO ——Collector-Base Voltage………………………… 100V VCEO ——Collector-Emitter Voltage……………………… 100V 1―Emitter，E 2―Collector，C 3―Base，B VEBO ——Emitter-Base Voltage……………………………… 5V IC——Collector Current……………………………………1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 100 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 100 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=10μA，IC=0 ICBO 100 Collector Cut-off Current HFE（1） DC Current Gain 80 HFE（2） DC Current Gain 50 HFE（3） DC Current Gain 20 VCE=1V, IC=50mA Cob Current Gain-Bandwidth Product Output Capacitance VCE=1V, IC=250mA 250 VCE=1V, IC=500mA VCE(sat) Collector- Emitter Saturation Voltage ft μA VCB=80V, IE=0 350 50 20 mV IC=350mA, IB=35mA MHz VCE=10V, IC=50mA, pF VCB=10V, IE=0,f=1MHz