HUASHAN H5610

PNP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5610
█ APPLICATIONS
AUDIO AMPLIFICATION
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
1―Emitter,E
2―Collector,C
3― Base,B
VCBO——Collector-Base Voltage………………………………-25V
VCEO——Collector-Emitter Voltage……………………………-20V
V EBO ——Emitter-Base Voltage………………………………-5V
I C ——Collector Current……………………………………-1A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
-25
V
IC=-10μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
-20
V
IC=-1mA,
BVEBO
Emitter-Base Breakdown Voltage
-5
V
IE=-10μA,IC=0
ICBO
Collector Cut-off Current
HFE
DC Current Gain
-1
60
μA
IB=0
VCB=-20V, IE=0
VCE=-2V, IC=-500mA
240
VCE(sat)
Collector- Emitter Saturation Voltage
-0.2
-0.5
V
IC=-800mA, IB=-80mA
VBE(ON)
Base-Emitter On Voltage
-0.8
1
V
VCE=-2V, IC=-500mA
Current Gain-Bandwidth Product
360
MHz
VCE=-2V, IC=-500mA
Output Capacitance
38
pF
fT
Cob
█ hFE Classification
A
60—120
B
85—170
C
120—240
VCB=-10V, IE=0,f=1MHz