P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD196 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 10W PC——Collector Dissipation（TA=25℃）…………………… 1.5W VCBO ——Collector-Base Voltage………………………… -40V 1―Emitter，E 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage……………………… -20V VEBO——Emitter-Base Voltage……………………………… -8V ICP——Collector Current（Pulse）…………………………… -10A IC——Collector Current（DC）……………………………… -6A Ib——Base Current……………………………………………-1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCEO Collector-Emitter Breakdown Voltage -20 Typ Max Unit Test Conditions V IC=-10mA, IB=0 ICBO Collector Cut-off Current -100 nA VCB=-40V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-8V, IC=0 HFE（1） DC Current Gain 140 HFE（2） DC Current Gain 70 VCE(sat) Collector- Emitter Saturation Voltage VBE fT Cob VCE=-2V, IC=-0.5A 600 VCE=-2V, IC=-5A Base-Emitter Voltage -1 V IC=-6A, IB=-0.15A -1.5 V VCE=-2V, IC=-4A Current Gain-Bandwidth Product 170 MHz Output Capacitance 62 pF VCE=-2V,IC=-500mA VCB=-10V, IE=0，f=1MHz Pulse Test：PW=10Ms（max）,Duty Cycle=30%（min） █ hFE Classification Y GR BL 140—240 200—400 300—600 Shantou Huashan Electronic Devices Co.,Ltd. P N P S I L I C O N T RAN S I S T O R HBD196