NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU407 █ APPLICATIONS High Voltage Swltching . █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation(Tc=25℃)……………………………60W VCBO ——Collector-Base Voltage………………………………330V 1―Base,B 2―Collector,C 3―Emitter,E VCEO——Collector-Emitter Voltage……………………………150V VEBO——Emitter-Base Voltage………………………………………6V IC——Collector Current(DC)………………………………………7A ICP——Collector Current(Pulse)……………………………………10A Ib——Base Current………………………………………………4A █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Max Unit 5 mA VCE=330V, VBE=0 ICES(2) 100 μA VCE=200V, VBE=0 ICES(3) 1 mA VCE=200V, VBE=0(Tc=125℃) 1 mA VEB=6V, IC=0 ICES(1) Collector Cut-off Current IEBO Emitter Cut-off Current HFE DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage fT Current Gain-Bandwidth Product tOFF Turn OFF Time Typ Test Conditions VCE=1V, IC=5A 10 1 V IC=5A, IB=0.5A 1.2 V IC=5A, IB=0.5A 10 0.75 MHz VCE=10V,IC=0.5A μS IC=5A, IB=0.5A Shantou Huashan Electronic Devices Co.,Ltd. HBU407