HUASHAN HBU407

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HBU407
█ APPLICATIONS
High Voltage Swltching .
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)……………………………60W
VCBO ——Collector-Base Voltage………………………………330V
1―Base,B
2―Collector,C
3―Emitter,E
VCEO——Collector-Emitter Voltage……………………………150V
VEBO——Emitter-Base Voltage………………………………………6V
IC——Collector Current(DC)………………………………………7A
ICP——Collector Current(Pulse)……………………………………10A
Ib——Base Current………………………………………………4A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Max
Unit
5
mA
VCE=330V, VBE=0
ICES(2)
100
μA
VCE=200V, VBE=0
ICES(3)
1
mA
VCE=200V, VBE=0(Tc=125℃)
1
mA
VEB=6V, IC=0
ICES(1) Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE
DC Current Gain
VCE(sat)
Collector- Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
tOFF
Turn OFF Time
Typ
Test Conditions
VCE=1V, IC=5A
10
1
V
IC=5A, IB=0.5A
1.2
V
IC=5A, IB=0.5A
10
0.75
MHz
VCE=10V,IC=0.5A
μS
IC=5A, IB=0.5A
Shantou Huashan Electronic Devices Co.,Ltd.
HBU407