PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP42C █ APPLICATIONS Medium Power Linear Switching Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（T c=25℃）…………………………65W PC——Collector Dissipation（T A =25℃）………………………… 2W 1―Base，B 2―Collector，C 3― Emitter，E VCBO ——Collector-Base Voltage………………………………-100V VCEO——Collector-Emitter Voltage……………………………-100V VE B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………………-6A I B ——Base Current……………………………………………-2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit Test Conditions －１００ Ｖ IC=-30mA, IB=0 ICEO Collector Cut-off Current －０．７ ｍＡ VCE=-60V, IB=0 IEBO Emitter Cut-off Current －１ ｍＡ VEB=-5V, IC=0 ICES Collector Cut-off Current HFE（1） DC Current Gain ３０ HFE（2） DC Current Gain １５ １００ VCE=-4V, IC=-０．３A VCE=-4V, IC=-3A VCE(sat) Collector- Emitter Saturation Voltage －１．５ Ｖ IC=-6A, IB=-600mA VBE(on) －２．０ Ｖ ３．０ VCE=-4V, IC=-6A VCE=-10V, IC=-500mA, f=1ＭＨｚ fT Base-Emitter On Voltage Current Gain-Bandwidth Product －４００ μＡ VCE=-100V, VEB=0 ＭＨｚ █ hFE（2） Classification 15—75 70—100 Shantou Huashan Electronic Devices Co.,Ltd. HEP42C